APT20M20LLL [MICROSEMI]

Power MOS 7 is a new generation of low loss, high voltage, N-Channel; 功率MOS 7是新一代低损耗,高电压, N沟道的
APT20M20LLL
元器件型号: APT20M20LLL
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

Power MOS 7 is a new generation of low loss, high voltage, N-Channel
功率MOS 7是新一代低损耗,高电压, N沟道的

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件: 总5页 (文件大小:155K)
下载文档:  下载PDF数据表文档文件
型号参数:APT20M20LLL参数

APT20M20WLL

Power Field-Effect Transistor, 65A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, TO-267, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 ADPOW

APT20M20WLL

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 MICROSEMI

APT20M21DN

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
18 ETC

APT20M21DN

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 ADPOW

APT20M21JN

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 120A I(D)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
18 ETC

APT20M22

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
16 ADPOW

APT20M22

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
44 ADPOW

APT20M22B2VFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
37 ADPOW

APT20M22B2VFR

Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TMAX-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 ADPOW

APT20M22B2VFRG

Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-247, TMAX-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 MICROSEMI

APT20M22B2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
60 ADPOW

APT20M22B2VRG

Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 MICROSEMI

APT20M22JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
28 ADPOW

APT20M22JVFR

Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 ADPOW

APT20M22JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
52 ADPOW