APT25GN120SE3 [MICROSEMI]

Insulated Gate Bipolar Transistor, 67A I(C), 1200V V(BR)CES, N-Channel, D3PAK, 3 PIN;


型号：	APT25GN120SE3
厂家：	Microsemi
描述：	Insulated Gate Bipolar Transistor, 67A I(C), 1200V V(BR)CES, N-Channel, D3PAK, 3 PIN 栅
文件：	总6页 (文件大小：197K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TYPICAL PERFORMANCE CURVES

APT25GN120B_S(G)

1200V

APT25GN120B

APT25GN120S

APT25GN120BG* APT25GN120SG*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra

low V_CE(ON)and are ideal for low frequency applications that require absolute minimum

conduction loss. Easy paralleling is a result of very tight parameter distribution and

a slightly positive V_CE(ON)temperature coefﬁcient. A built-in gate resistor ensures

extremely reliable operation, even in the event of a short circuit fault. Low gate charge

simpliﬁes gate drive design and minimizes losses.

(B)

D³PAK

(S)

• 1200V Field Stop

• Trench Gate: Low V_CE(on)

• Easy Paralleling

• Integrated Gate Resistor: Low EMI, High Reliability

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise speciﬁed.

Parameter

Symbol

APT25GN120B(G)

UNIT

V_CES

Collector-Emitter Voltage

1200

Volts

V_GE

I_C1

Gate-Emitter Voltage

±30

Continuous Collector Current @ T_C= 25°C

Continuous Collector Current @ T_C= 110°C

I_C2

Amps

Pulsed Collector Current

I_CM

Switching Safe Operating Area @ T_J= 150°C

75A @ 1200V

272

SSOA

P_D

Total Power Dissipation

Watts

°C

T_J,T_STG

Operating and Storage Junction Temperature Range

-55 to 150

300

T_L

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

Units

V_(BR)CES

1200

Collector-Emitter Breakdown Voltage (V_GE= 0V, I_C= 150µA)

V_GE(TH)

5.8

1.7

1.9

6.5

2.1

Gate Threshold Voltage (V_CE= V_GE, I_C= 1mA, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 25A, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 25A, T_j= 125°C)

Volts

1.4

V_CE(ON)

Collector Cut-off Current (V_CE= 1200V, V_GE= 0V, T_j= 25°C)

100

TBD

600

I_CES

µA

Collector Cut-off Current (V_CE= 1200V, V_GE= 0V, T_j= 125°C)

Gate-Emitter Leakage Current (V_GE= ±20V)

Integrated Gate Resistor

I_GES

R_G(int)

Ω

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

APT25GN120B_S(G)

DYNAMIC CHARACTERISTICS

Test Conditions

Capacitance

Characteristic

Symbol

C_ies

MIN

TYP

1800

105

MAX

UNIT

Input Capacitance

C_oes

C_res

Output Capacitance

V_GE= 0V, V_CE= 25V

f = 1 MHz

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

V_GEP

Q_g

9.5

Gate Charge

V_GE= 15V

V_CE= 600V

I_C= 25A

155

Total Gate Charge

Q_ge

Q_gc

Gate-Emitter Charge

Gate-Collector ("Miller") Charge

T_J= 150°C, R_G= 4.3Ω ⁷, V_GE

SSOA

Switching Safe Operating Area

15V, L = 100µH,V_CE= 1200V

t_d(on)

t_r

t_d(off)

t_f

Inductive Switching (25°C)

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

V_CC= 800V

V_GE= 15V

I_C= 25A

280

135

TBD

1490

2150

R_G= 1.0Ω ⁷

E_on1

E_on2

E_off

t_d(on)

t_r

Turn-on Switching Energy

T_J= +25°C

Turn-on Switching Energy (Diode)

Turn-off Switching Energy

Inductive Switching (125°C)

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

V_CC= 800V

V_GE= 15V

I_C= 25A

t_d(off)

t_f

335

225

Current Fall Time

R_G= 1.0Ω ⁷

4 4

E_on1

E_on2

E_off

TBD

2390

3075

Turn-on Switching Energy

T_J= +125°C

Turn-on Switching Energy (Diode)

Turn-off Switching Energy

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Characteristic

UNIT

MIN

TYP

MAX

.46

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

θJC

°C/W

N/A

W_T

5.9

Repetitive Rating: Pulse width limited by maximum junction temperature.

For Combi devices, I_cesincludes both IGBT and FRED leakages

See MIL-STD-750 Method 3471.

E_on1is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in ﬁgure 21, but with a Silicon Carbide diode.

E_on2is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. (See Figures 21, 22.)

E_offis the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

R_Gis external gate resistance, not including R_G(int)nor gate driver impedance. (MIC4452)

APT Reserves the right to change, without notice, the speciﬁcations and information contained herein.

TYPICAL PERFORMANCE CURVES

APT25GN120B_S(G)

15V

12V

11V

10V

11V

10V

, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(T = 25°C)

FIGURE 2, Output Characteristics (T = 125°C)

250µs PULSE

TEST<0.5 % DUTY

CYCLE

= 25A

= 25°C

= 240V

= 600V

T_J= 125°C

= 960V

T_J= 25°C

T_J= -55°C

20 40 60 80 100 120 140 160 180

GATE CHARGE (nC)

, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 3, Transfer Characteristics

FIGURE 4, Gate Charge

3.5

2.5

_J= 25°C.

= 50A

250µs PULSE TEST

<0.5 % DUTY CYCLE

= 50A

2.5

= 25A

1.5

= 12.5A

1.5

= 12.5A

1.0

0.5

_GE= 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

-50 -25

75 100 125

, GATE-TO-EMITTER VOLTAGE (V)

T , Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage

FIGURE 6, On State Voltage vs Junction Temperature

1.10

1.05

1.00

0.95

0.90

-50 -25

100 125

-50 -25

25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

T , CASE TEMPERATURE (°C)

FIGURE 7, Breakdown Voltage vs. Junction Temperature

FIGURE 8, DC Collector Current vs Case Temperature

APT25GN120B_S(G)

350

300

250

200

150

100

V_GE=15V,T_J=125°C

= 15V

V_GE=15V,T_J=25°C

V_CE= 800V

T_J= 25°C, or 125°C

R_G= 4.3Ω

V_CE= 800V

R_G= 4.3Ω

L = 100µH

10 15 20 25 30 35 40 45 50 55

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9, Turn-On Delay Time vs Collector Current

FIGURE 10, Turn-Off Delay Time vs Collector Current

300

_G= 4.3Ω, L = 100µH, V_CE= 800V

R_G= 4.3Ω, L = 100µH, V_CE= 800V

250

200

150

100

_J= 125°C, V_GE= 15V

_J= 25°C, V_GE= 15V

T_J= 25 or 125°C,V_GE= 15V

10 15 20 25 30 35 40 45 50 55

10 15 20 25 30 35 40

45 50 55

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11, Current Rise Time vs Collector Current

FIGURE 12, Current Fall Time vs Collector Current

7000

6000

5000

4000

3000

2000

7000

6000

5000

4000

3000

2000

800V

+15V

800V

+15V

= 4.3Ω

T_J= 125°C

T_J= 25°C

1000

_J= 25°C

10 15 20 25 30 35 40 45 50 55

, COLLECTOR TO EMITTER CURRENT (A)

10 15 20 25 30 35 40 45 50 55

I , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 13, Turn-On Energy Loss vs Collector Current

FIGURE 14, Turn Off Energy Loss vs Collector Current

14000

7000

800V

+15V

800V

+15V

50A

off,

50A

= 125°C

= 4.3Ω

on2,

12000

10000

8000

6000

4000

6000

5000

4000

3000

2000

50A

off,

50A

25A

on2,

off,

25A

off,

on2,

12.5A

25A

off,

on2,

2000

1000

12.5A

on2,

100

125

R , GATE RESISTANCE (OHMS)

T , JUNCTION TEMPERATURE (°C)

FIGURE 15, Switching Energy Losses vs. Gate Resistance

FIGURE 16, Switching Energy Losses vs Junction Temperature

TYPICAL PERFORMANCE CURVES

APT25GN120B_S(G)

4,000

C_ies

1,000

500

C_oes

C_res

100

200 400 600 800 1000 1200 1400

, COLLECTOR TO EMITTER VOLTAGE

, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)

Figure 17, Capacitance vs Collector-To-Emitter Voltage

Figure 18,Minimim Switching Safe Operating Area

0.50

D = 0.9

0.40

0.7

0.30

0.5

Note:

0.20

0.3

0.10

SINGLE PULSE

Duty Factor D =

Peak T = P x Z

0.1

+ T

θJC

0.05

10^-5

10^-4

10^-3

10^-2

10^-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

140

100

F_max= min (f_max, f_max2

)

RC MODEL

0.05

Junction

f_max1

temp. (°C)

t_d(on)+ t_r+ t_d(off)+ t_f

0.0536

0.169

0.00826

0.353

P_diss- P_cond

E_on2+ E_off

f_max2

Power

(watts)

125°C

75°C

D = 50 %

T_J- T_C

R_θJC

= 800V

P_diss

= 4.3Ω

Case temperature. (°C)

10 15 20 25

30 35 40 45

I , COLLECTOR CURRENT (A)

Figure 20, Operating Frequency vs Collector Current

FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL

APT25GN120B_S(G)

Gate Voltage

10%

t_d(on)

APT30DQ120

= 125°C

90%

V_CE

I_C

V_CC

t_r

Collector Current

CollectorVoltage

10%

Switching Energy

D.U.T.

Figure 22, Turn-on Switching Waveforms and Deﬁnitions

Figure 21, Inductive Switching Test Circuit

90%

Gate Voltage

= 125°C

CollectorVoltage

t_d(off)

90%

t_f

10%

Collector Current

Switching Energy

Figure 23, Turn-off Switching Waveforms and Deﬁnitions

D³PAKPackageOutline

TO-247 Package Outline

SAC: Tin, Silver, Copper

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

4.69 (.185)

15.95 (.628)

16.05(.632)

13.41 (.528)

13.51(.532)

5.31 (.209)

15.49 (.610)

16.26 (.640)

1.04 (.041)

1.15(.045)

1.49 (.059)

2.49 (.098)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

Revised

8/29/97

11.51 (.453)

11.61 (.457)

13.79 (.543)

13.99(.551)

Revised

4/18/95

20.80 (.819)

21.46 (.845)

3.50 (.138)

3.81 (.150)

0.46 (.018)

0.56 (.022)

{3 Plcs}

1.27 (.050)

1.40 (.055)

0.020 (.001)

0.178 (.007)

2.87 (.113)

3.12 (.123)

3.81 (.150)

4.50 (.177) Max.

1.98 (.078)

2.08 (.082)

4.06 (.160)

2.67 (.105)

2.84 (.112)

(Base of Lead)

1.65 (.065)

2.13 (.084)

1.22 (.048)

1.32 (.052)

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

Heat Sink (Collector)

and Leads are Plated

5.45 (.215) BSC

{2 Plcs.}

1.01 (.040)

1.40 (.055)

Gate

Collector

Emitter

Collector

Gate

Dimensions in Millimeters (Inches)

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

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