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APT27GA90BD15

更新时间：2024-09-18 08:13:05
品牌：MICROSEMI
描述：High Speed PT IGBT

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APT27GA90BD15 概述

High Speed PT IGBT 高速PT IGBT IGBT

APT27GA90BD15 规格参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TO-247AD
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：2.27Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：48 A
集电极-发射极最大电压：900 V配置：SINGLE WITH BUILT-IN DIODE
JEDEC-95代码：TO-247ADJESD-30 代码：R-PSFM-T3
JESD-609代码：e1元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：NO端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：281 ns
标称接通时间 (ton)：18 nsBase Number Matches：1

APT27GA90BD15 数据手册

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APT27GA90BD15  
APT27GA90SD15  
900V  
High Speed PT IGBT  
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved  
(B)  
D3PAK  
through leading technology silicon design and lifetime control processes. A reduced Eoff  
-
(S)  
C
VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low  
G
E
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short  
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the  
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even  
G
C
E
when switching at high frequency.  
Combi (IGBT and Diode)  
FEATURES  
TYPICAL APPLICATIONS  
• Fast switching with low EMI  
• Very Low Eoff for maximum efficiency  
• Ultra low Cres for improved noise immunity  
• Low conduction loss  
• ZVS phase shifted and other full bridge  
• Half bridge  
• High power PFC boost  
• Welding  
• Low gate charge  
• UPS, solar, and other inverters  
• High frequency, high efficiency industrial  
• Increased intrinsic gate resistance for low EMI  
• RoHS compliant  
Absolute Maximum Ratings  
Symbol Parameter  
Ratings  
Unit  
Collector Emitter Voltage  
900  
V
Vces  
IC1  
Continuous Collector Current @ TC = 25°C  
Continuous Collector Current @ TC = 100°C  
Pulsed Collector Current 1  
48  
27  
A
IC2  
ICM  
79  
VGE  
Gate-Emitter Voltage 2  
±30  
V
PD  
Total Power Dissipation @ TC = 25°C  
Switching Safe Operating Area @ TJ = 150°C  
Operating and Storage Junction Temperature Range  
223  
W
SSOA  
TJ, TSTG  
TL  
79A @ 900V  
-55 to 150  
°C  
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds  
300  
Static Characteristics  
Symbol Parameter  
T = 25°C unless otherwise specified  
J
Test Conditions  
Min  
Typ  
Max  
Unit  
VBR(CES)  
Collector-Emitter Breakdown Voltage  
VGE = 0V, IC = 1.0mA  
900  
TJ = 25°C  
TJ = 125°C  
2.5  
2.2  
4.5  
3.1  
VGE = 15V,  
IC = 14A  
V
VCE(on)  
VGE(th)  
ICES  
Collector-Emitter On Voltage  
Gate Emitter Threshold Voltage  
Zero Gate Voltage Collector Current  
Gate-Emitter Leakage Current  
VGE =VCE , IC = 1mA  
3
6
TJ = 25°C  
350  
VCE = 900V,  
VGE = 0V  
μA  
TJ = 125°C  
1500  
±100  
IGES  
VGS = ±30V  
nA  
Microsemi Website - http://www.microsemi.com  
APT27GA90BD_SD15  
Dynamic Characteristic  
T = 25°C unless otherwise specified  
J
Symbol  
Cies  
Parameter  
Test Conditions  
Capacitance  
Min  
Typ  
1390  
145  
30  
Max  
Unit  
Input Capacitance  
Output Capacitance  
Coes  
VGE = 0V, VCE = 25V  
pF  
Cres  
Reverse Transfer Capacitance  
Total Gate Charge  
f = 1MHz  
Gate Charge  
Qg3  
62  
Qge  
Gate-Emitter Charge  
8
VGE = 15V  
nC  
A
24  
VCE= 450V  
Qgc  
Gate- Collector Charge  
IC = 14A  
TJ = 150°C, RG = 10Ω4, VGE = 15V,  
L= 100uH, VCE = 900V  
Inductive Switching (25°C)  
VCC = 600V  
79  
SSOA  
Switching Safe Operating Area  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Current Rise Time  
9
8
ns  
μJ  
ns  
μJ  
Turn-Off Delay Time  
Current Fall Time  
98  
VGE = 15V  
84  
IC = 14A  
RG = 10Ω4  
Eon2  
Turn-On Switching Energy  
Turn-Off Switching Energy  
Turn-On Delay Time  
Current Rise Time  
413  
287  
8
6
Eoff  
TJ = +25°C  
td(on)  
tr  
td(off)  
tf  
Inductive Switching (125°C)  
10  
VCC = 600V  
Turn-Off Delay Time  
Current Fall Time  
137  
144  
760  
647  
VGE = 15V  
IC = 14A  
RG = 10Ω4  
Eon2  
Turn-On Switching Energy  
Turn-Off Switching Energy  
6
Eoff  
TJ = +125°C  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
Unit  
RθJC  
Junction to Case Thermal Resistance (IGBT)  
-
-
.56  
°C/W  
RθJC  
WT  
Junction to Case Thermal Resistance (Diode)  
Package Weight  
1.18  
-
-
5.9  
g
Torque  
Mounting Torque (TO-247 Package), 4-40 or M3 screw  
10  
in·lbf  
1
2
3
4
5
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.  
Pulse test: Pulse Width < 380μs, duty cycle < 2%.  
See Mil-Std-750 Method 3471.  
RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)  
Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the  
clamping diode.  
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.  
Microsemi reserves the right to change, without notice, the specifications and information contained herein.  
6
Typical Performance Curves  
APT27GA90BD_SD15  
250  
225  
200  
175  
150  
125  
100  
75  
50  
V
= 15V  
15V  
GE  
13V  
TJ= 55°C  
TJ= 125°C  
40  
30  
20  
10  
0
11V  
10V  
9V  
TJ= 150°C  
8V  
7V  
TJ= 25°C  
50  
6V  
25  
0
0
4
8
12  
16 20 24 28  
32  
0
1
2
3
4
5
6
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)  
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)  
CE  
CE  
FIGURE 1, Output Characteristics (T = 25°C)  
FIGURE 2, Output Characteristics (T = 25°C)  
J
J
16  
14  
12  
10  
8
100  
80  
60  
40  
20  
0
250μs PULSE  
TEST<0.5 % DUTY  
CYCLE  
I
= 14A  
C
T
= 25°C  
J
V
= 180V  
CE  
V
= 450V  
CE  
V
= 720V  
CE  
6
TJ= 25°C  
4
TJ= -55°C  
TJ= 125°C  
2
0
0
20  
40  
60  
80  
0
2
4
6
8
10 12 14 16  
GATE CHARGE (nC)  
V
, GATE-TO-EMITTER VOLTAGE (V)  
GE  
FIGURE 4, Gate charge  
FIGURE 3, Transfer Characteristics  
5
4
3
2
1
0
6
5
4
3
2
1
0
TJ = 25°C.  
250μs PULSE TEST  
<0.5 % DUTY CYCLE  
I
= 28A  
C
I
= 28A  
I
= 14A  
C
C
IC = 14A  
I
= 7A  
I
= 7A  
C
C
VGE = 15V.  
250μs PULSE TEST  
<0.5 % DUTY CYCLE  
0
25  
50  
75  
100  
125  
150  
6
8
10  
12  
14  
16  
V
, GATE-TO-EMITTER VOLTAGE (V)  
T , Junction Temperature (°C)  
GE  
J
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage  
FIGURE 6, On State Voltage vs Junction Temperature  
50  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
0.75  
0.70  
40  
30  
20  
10  
0
25  
50  
75  
100  
125  
150  
-50 -25  
0
25 50 75 100 125 150  
T , JUNCTION TEMPERATURE  
T , Case Temperature (°C)  
J
C
FIGURE 7, Threshold Voltage vs Junction Temperature  
FIGURE 8, DC Collector Current vs Case Temperature  
Typical Performance Curves  
APT27GA90BD_SD15  
200  
175  
150  
125  
100  
75  
16  
VCE = 600V  
TJ = 25°C, or 125°C  
14  
R
G = 10ꢀ  
L = 100μH  
12  
10  
8
VGE =15V,TJ=125°C  
VGE =15V,TJ=25°C  
6
50  
4
VCE = 600V  
RG = 10ꢀ  
L = 100μH  
25  
2
0
0
0
5
10  
15  
20  
25  
30  
0
I
5
10  
15  
20  
25  
30  
, COLLECTOR-TO-EMITTER CURRENT (A)  
I
, COLLECTOR-TO-EMITTER CURRENT (A)  
CE  
CE  
FIGURE 9, Turn-On Delay Time vs Collector Current  
FIGURE 10, Turn-Off Delay Time vs Collector Current  
30  
25  
20  
15  
10  
5
200  
R
G = 10ꢀ, L = 100μH, VCE = 600V  
180  
160  
140  
T
J = 125°C, VGE = 15V  
120  
100  
80  
60  
40  
20  
0
T
J = 25°C, VGE = 15V  
TJ = 25 or 125°C,VGE = 15V  
R
G = 10ꢀ, L = 100μH, VCE = 600V  
0
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
I
, COLLECTOR-TO-EMITTER CURRENT (A)  
I
, COLLECTOR-TO-EMITTER CURRENT (A)  
CE  
CE  
FIGURE 12, Current Fall Time vs Collector Current  
FIGURE 11, Current Rise Time vs Collector Current  
2000  
1600  
1200  
800  
1600  
1400  
1200  
1000  
800  
V
V
=
=
600V  
+15V  
CE  
GE  
V
V
=
=
600V  
+15V  
CE  
GE  
R
=10ꢀ  
G
R
= 10ꢀ  
G
TJ = 125°C  
TJ = 125°C  
600  
400  
400  
T
J = 25°C  
TJ = 25°C  
200  
0
0
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
I
, COLLECTOR-TO-EMITTER CURRENT (A)  
I
, COLLECTOR-TO-EMITTER CURRENT (A)  
CE  
CE  
FIGURE 13, Turn-On Energy Loss vs Collector Current  
FIGURE 14, Turn-Off Energy Loss vs Collector Current  
2500  
2000  
1500  
1000  
500  
2000  
V
V
=
=
600V  
+15V  
CE  
GE  
V
V
T
=
=
600V  
+15V  
CE  
GE  
Eon2,28A  
R
= 10ꢀ  
G
= 125°C  
J
Eon2,28A  
1500  
1000  
500  
Eoff,28A  
Eoff,28A  
Eon2,14A  
Eoff,14A  
Eon2,14A  
Eoff,14A  
Eon2,7A  
Eoff,7A  
Eon2,7A  
Eoff,7A  
0
0
0
25  
50  
75  
100  
125  
0
10  
G
20  
30  
40  
50  
R , GATE RESISTANCE (OHMS)  
T , JUNCTION TEMPERATURE (°C)  
J
FIGURE 15, Switching Energy Losses vs Gate Resistance  
FIGURE 16, Switching Energy Losses vs Junction Temperature  
Typical Performance Curves  
APT27GA90BD_SD15  
1000  
100  
10  
10,000  
Cies  
1,000  
100  
10  
Coes  
Cres  
1
0.1  
1
10  
100  
1000  
0
200  
400  
600  
800  
V
, COLLECTOR-TO-EMITTER VOLTAGE  
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)  
CE  
CE  
FIGURE 18, Minimum Switching Safe Operating Area  
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage  
0. 6  
D = 0.9  
0. 5  
0.7  
0. 4  
0.5  
0.3  
0. 3  
0. 2  
0. 1  
0
Note:  
t
1
t
2
t
1
t
0.1  
Duty Factor D =  
/
2
Peak T = P  
x Z  
+ T  
C
J
DM  
θJC  
0.05  
SINGLE PULSE  
10-3  
10-4  
10-2  
10-5  
0.1  
1
RECTANGULAR PULSE DURATION (SECONDS)  
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration  
APT27GA90BD_SD15  
10%  
Gate Voltage  
T
= 125°C  
J
90%  
td(on)  
APT15DQ100  
Collector Current  
tr  
VCE  
VCC  
IC  
10%  
5%  
5%  
Collector Voltage  
Switching Energy  
A
D.U.T.  
Figure 20, Inductive Switching Test Circuit  
Figure 21, Turn-on Switching Waveforms and Definitions  
T
= 125°C  
J
90%  
Gate Voltage  
td(off)  
Collector Voltage  
Collector Current  
tf  
10%  
0
Switching Energy  
Figure 22, Turn-off Switching Waveforms and Definitions  
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE  
MAXIMUM RATINGS  
Symbol Characteristic / Test Conditions  
All Ratings: TC = 25°C unless otherwise specified.  
APT27GA90BD_SD15  
Unit  
15  
29  
80  
IF(AV)  
IF(RMS)  
IFSM  
Maximum Average Forward Current (TC = 126°C, Duty Cycle = 0.5)  
RMS Forward Current (Square wave, 50% duty)  
Amps  
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
Min  
Type  
2.5  
Max  
Unit  
IF = 15A  
IF = 30A  
Forward Voltage  
3.06  
1.92  
Volts  
VF  
IF = 15A, TJ = 125°C  
DYNAMIC CHARACTERISTICS  
Symbol Characteristic  
Test Conditions  
Min  
Typ  
Max  
Unit  
IF = 1A, diF/dt = -100A/µs ,  
VR = 30V, TJ = 25°C  
Reverse Recovery Time  
trr  
-
-
20  
ns  
Reverse Recovery Time  
trr  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
235  
185  
3
IF = 15A, diF/dt = -200A/µs  
Reverse Recovery Charge  
Qrr  
nC  
Amps  
ns  
V
R = 667V, TC = 25°C  
Maximum Reverse Recovery Current  
IRRM  
trr  
Reverse Recovery Time  
300  
810  
6
IF = 15A, diF/dt = -200A/µs  
VR = 667V, TC = 125°C  
nC  
Reverse Recovery Charge  
Maximum Reverse Recovery Current  
Reverse Recovery Time  
Qrr  
IRRM  
trr  
Amps  
ns  
125  
1150  
IF = 15A, diF/dt = -1000A/µs  
VR = 667V, TC = 125°C  
Reverse Recovery Charge  
nC  
Qrr  
Maximum Reverse Recovery Current  
-
-
Amps  
19  
IRRM  
1.20  
D = 0.9  
1.00  
0.7  
0.80  
0.5  
0.60  
Note:  
t
1
0.40  
0.20  
0
0.3  
t
2
t
1
t
/
2
Duty Factor D =  
0.1  
SINGLE PULSE  
Peak T = P  
x Z  
+ T  
θJC C  
J
DM  
0.05  
10-5  
10-4  
10-3  
10-2  
10-1  
1.0  
RECTANGULAR PULSE DURATION (seconds)  
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION  
TJ (°C)  
TC (°C)  
ZEXT are the external thermal  
impedances: Case to sink,  
sink to ambient, etc. Set to  
zero when modeling only  
the case to junction.  
0.676  
0.504  
Dissipated Power  
(Watts)  
0.00147  
0.0440  
FIGURE 1b,TRANSIENT THERMAL IMPEDANCE MODEL  
Dynamic Characteristics  
T = 25°C unless otherwise specified  
J
APT27GA90BD_SD15  
45  
40  
35  
30  
400  
350  
300  
250  
200  
150  
T
V
= 125°C  
= 667V  
J
30A  
R
15A  
T
J
= 175°C  
J
25  
20  
15  
10  
7.5A  
T
= 125°C  
T
= 25°C  
J
100  
50  
0
T
= -55°C  
J
5
0
0
1
2
3
4
0
200  
400  
600  
800 1000 1200  
V , ANODE-TO-CATHODE VOLTAGE (V)  
Figure 2. Forward Current vs. Forward Voltage  
-di /dt, CURRENT RATE OF CHANGE(A/µs)  
Figure 3. Reverse Recovery Time vs. Current Rate of Change  
F
F
2000  
1800  
1600  
1400  
1200  
1000  
800  
25  
T
V
= 125°C  
= 667V  
T
= 125°C  
V = 667V  
R
J
J
R
30A  
20  
15  
10  
5
30A  
15A  
15A  
7.5A  
600  
400  
200  
0
7.5A  
0
0
200  
400  
600  
800 1000 1200  
0
200  
400  
600  
800 1000 1200  
-di /dt, CURRENT RATE OF CHANGE (A/µs)  
-di /dt, CURRENT RATE OF CHANGE (A/µs)  
F
F
Figure 4. Reverse Recovery Charge vs. Current Rate of Change  
Figure 5. Reverse Recovery Current vs. Current Rate of Change  
1.2  
35  
Duty cycle = 0.5  
Q
rr  
T
= 175°C  
J
t
rr  
30  
25  
20  
15  
10  
5
1.0  
t
I
rr  
RRM  
0.8  
0.6  
0.4  
0.2  
0.0  
Q
rr  
0
0
25  
50  
75  
100  
125  
150  
25  
50  
75  
Case Temperature (°C)  
Figure 7. Maximum Average Forward Current vs. CaseTemperature  
100  
125  
150  
175  
T , JUNCTION TEMPERATURE (°C)  
J
Figure 6. Dynamic Parameters vs. Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
1
10  
100 200  
V , REVERSE VOLTAGE (V)  
R
Figure 8. Junction Capacitance vs. Reverse Voltage  
Dynamic Characteristic  
T = 25°C unless otherwise specified  
J
APT27GA90BD_SD15  
V
r
diF/dt Adjust  
+18V  
0V  
APT10035LLL  
D.U.T.  
t
Q
/
30μH  
rr rr  
Waveform  
PEARSON 2878  
CURRENT  
TRANSFORMER  
Figure 9. Diode Test Circuit  
1
2
IF - Forward Conduction Current  
1
4
5
diF/dt - Rate of Diode Current Change Through Zero Crossing.  
IRRM - Maximum Reverse Recovery Current.  
Zero  
3
4
0.25 I  
RRM  
t
- Reverse Recovery Time, measured from zero crossing where diode  
current goes from positive to negative, to the point at which the straight  
3
rr  
2
line through IRRM and 0.25 IRRM passes through zero.  
5
Q
- Area Under the Curve Defined by IRRM and t .  
rr  
rr  
Figure 10, Diode Reverse Recovery Waveform and Definitions  
D3PAKPackageOutline  
TO-247 Package Outline  
e1 SAC: Tin, Silver, Copper  
e3 SAC: Tin, Silver, Copper  
4.98 (.196)  
5.08 (.200)  
1.47 (.058)  
1.57 (.062)  
4.69 (.185)  
15.95 (.628)  
16.05(.632)  
13.41 (.528)  
13.51(.532)  
5.31 (.209)  
15.49 (.610)  
16.26 (.640)  
1.04 (.041)  
1.15(.045)  
1.49 (.059)  
2.49 (.098)  
5.38 (.212)  
6.20 (.244)  
6.15 (.242) BSC  
Revised  
8/29/97  
11.51 (.453)  
11.61 (.457)  
13.79 (.543)  
13.99(.551)  
20.80 (.819)  
21.46 (.845)  
3.50 (.138)  
3.81 (.150)  
0.46 (.018)  
0.56 (.022)  
{3 Plcs}  
1.27 (.050)  
1.40 (.055)  
0.020 (.001)  
0.178 (.007)  
2.87 (.113)  
3.12 (.123)  
3.81 (.150)  
4.50 (.177) Max.  
1.98 (.078)  
2.08 (.082)  
4.06 (.160)  
2.67 (.105)  
2.84 (.112)  
(Base of Lead)  
1.65 (.065)  
2.13 (.084)  
1.22 (.048)  
1.32 (.052)  
0.40 (.016)  
0.79 (.031)  
19.81 (.780)  
20.32 (.800)  
Heat Sink (Collector)  
and Leads are Plated  
5.45 (.215) BSC  
{2 Plcs.}  
1.01 (.040)  
1.40 (.055)  
Gate  
Collector (Cathode)  
Emitter  
(Anode)  
Emitter (Anode)  
Collector (Cathode)  
Gate  
Dimensions in Millimeters (Inches)  
2.21 (.087)  
2.59 (.102)  
5.45 (.215) BSC  
2-Plcs.  
Dimensions in Millimeters and (Inches)  
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583  
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262  
and foreign patents. US and Foreign patents pending. All Rights Reserved.  

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