APT30M75BFLLG [MICROSEMI]

Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN;


型号：	APT30M75BFLLG
厂家：	Microsemi
描述：	Power Field-Effect Transistor, 44A I(D), 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN 局域网开关脉冲晶体管
文件：	总4页 (文件大小：69K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

APT30M75BFLL

APT30M75SFLL

300V 44A 0.075Ω

BFLL

POWER MOS 7 FREDFET

D³PAK

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

TO-247

SFLL

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• IncreasedPowerDissipation

• Easier To Drive

• TO-247 or Surface Mount D³PAK Package

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT30M75

300

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

176

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

Watts

W/°C

329

P_D

2.63

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

300

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 22A)

Ohms

µA

0.075

250

Zero Gate Voltage Drain Current (V_DS= 300V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 240V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

1000

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

APT30M75 BFLL - SFLL

DYNAMIC CHARACTERISTICS

Symbol Characteristic

TestConditions

MIN

TYP

3018

771

MAX

UNIT

C_iss

C_oss

C_rss

Q_g

InputCapacitance

V_GS= 0V

OutputCapacitance

V_DS= 25V

f = 1 MHz

V_GS= 10V

Reverse Transfer Capacitance

Total Gate Charge

V_DD= 200V

Q_gs

Q_gd

t_d(on)

t_r

Gate-SourceCharge

Gate-Drain("Miller")Charge

Turn-onDelayTime

Rise Time

I_D= 44A @ 25°C

V_GS= 15V

V_DD= 200V

I_D= 44A @ 25°C

R_G= 0.6Ω

t_d(off)

t_f

Turn-offDelayTime

FallTime

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions

TYP

MAX

UNIT

Continuous Source Current (Body Diode)

I_S

Amps

I_SM

V_SD

Pulsed Source Current

Diode Forward Voltage

(Body Diode)

176

1.3

(V_GS= 0V, I_S= -44A)

Volts

V/ns

Peak Diode Recovery

Reverse Recovery Time

(I_S= -44A, ^di/_dt= 100A/µs)

T_j= 25°C

T_j= 125°C

T_j= 25°C

T_j= 125°C

T_j= 25°C

T_j= 125°C

200

400

µC

t_rr

Reverse Recovery Charge

(I_S= -44A, ^di/_dt= 100A/µs)

1.1

2.7

Q_rr

Peak Recovery Current

(I_S= -44A, ^di/_dt= 100A/µs)

I_RRM

Amps

15.1

THERMAL CHARACTERISTICS

Symbol Characteristic

TYP

MAX

0.38

UNIT

R_θJC

R_θJA

Junction to Case

°C/W

JunctiontoAmbient

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

4 Starting T = +25°C, L = 1.34mH, R = 25Ω, Peak I = 44A

numbers reflect the limitations of the test circuit rather than the

device itself.

≤ -I 44A

≤ 700A/µs

V_R≤ V

T ≤ 150°C

DSS

3 See MIL-STD-750 Method 3471

APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.

0.40

0.9

0.7

0.5

0.3

0.35

0.30

0.25

0.20

0.15

0.10

Note:

Duty Factor D =

0.1

0.05

Peak T = P

x Z

+ T

DM θJC

0.05

SINGLEPULSE

10^-5

10^-4

10^-3

RECTANGULARPULSEDURATION(SECONDS)

FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

10^-2

10^-1

1.0

Typical Performance Curves

APT30M75 BFLL - SFLL

100

RC MODEL

=15 &10V

8.5V

0.0329

0.00334

0.00802

0.165

Power

(Watts)

7.5

Junction

temp. ( ”C)

0.158

0.189

6.5V

Case temperature

,DRAIN-TO-SOURCEVOLTAGE(VOLTS)

FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL

FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS

160

1.40

NORMALIZED TO

> I (ON) x

MAX.

DS(ON)

= 10V

= 22A

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

140

120

100

1.30

1.20

1.10

1.00

= -55°C

=10V

=20V

= +25°C

0.90

0.80

= +125°C

100

120

,GATE-TO-SOURCEVOLTAGE(VOLTS)

I ,DRAINCURRENT(AMPERES)

FIGURE4, TRANSFERCHARACTERISTICS

FIGURE5,R

vsDRAINCURRENT

DS(ON)

1.15

1.10

1.05

1.00

0.95

0.90

100

125

150

-50 -25

50 75 100 125 150

T ,CASETEMPERATURE(°C)

T ,JUNCTIONTEMPERATURE(°C)

FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE

FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE

2.5

1.2

= 22A

= 10V

1.1

1.0

0.9

0.8

2.0

1.5

1.0

0.5

0.0

0.7

0.6

-50 -25

25 50

75 100 125 150

-50 -25

75 100 125 150

T ,JUNCTIONTEMPERATURE(°C)

T ,CASETEMPERATURE(°C)

FIGURE8, R

vs. TEMPERATURE

FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE

DS(ON)

APT30M75 BFLL - SFLL

176

100

20,000

10,000

OPERATIONHERE

LIMITEDBYR (ON)

iss

1,000

100

100µS

oss

1mS

rss

=+25°C

T =+150°C

SINGLEPULSE

10mS

100

300

,DRAIN-TO-SOURCEVOLTAGE(VOLTS)

FIGURE10,MAXIMUMSAFEOPERATINGAREA

FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE

200

= 44A

100

=60V

T =+150°C

=150V

T =+25°C

=240V

50 60

70 80

0.3

0.5

0.7

0.9

1.1

1.3

1.5

Q ,TOTALGATECHARGE(nC)

,SOURCE-TO-DRAINVOLTAGE(VOLTS)

FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE

FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE

D³PAKPackageOutline

TO-247 Package Outline

4.98 (.196)

4.69 (.185)

15.95 (.628)

16.05 (.632)

13.41 (.528)

13.51 (.532)

5.31 (.209)

5.08 (.200)

15.49 (.610)

16.26 (.640)

1.04 (.041)

1.15 (.045)

1.49 (.059)

2.49 (.098)

1.47 (.058)

1.57 (.062)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

Revised

8/29/97

11.51 (.453)

11.61 (.457)

13.79 (.543)

13.99 (.551)

Revised

4/18/95

20.80 (.819)

21.46 (.845)

3.50 (.138)

3.81 (.150)

0.46 (.018)

0.56 (.022)

{3 Plcs}

1.27 (.050)

1.40 (.055)

0.020 (.001)

0.178 (.007)

2.87 (.113)

3.12 (.123)

3.81 (.150)

4.50 (.177) Max.

1.98 (.078)

2.08 (.082)

4.06 (.160)

2.67 (.105)

2.84 (.112)

(Base of Lead)

1.65 (.065)

2.13 (.084)

1.22 (.048)

1.32 (.052)

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

Heat Sink (Drain)

and Leads

are Plated

5.45 (.215) BSC

{2 Plcs.}

1.01 (.040)

1.40 (.055)

Gate

Drain

Source

Drain

Gate

Dimensions in Millimeters (Inches)

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

APT'sdevicesarecoveredbyoneormoreofthefollowingU.S.patents:

4,895,810

5,256,583

5,045,903

4,748,103

5,089,434

5,283,202

5,182,234

5,231,474

5,019,522

5,434,095

5,262,336

5,528,058

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