APT30SC60S [MICROSEMI]
Rectifier Diode, Schottky, 1 Element, 30A, 600V V(RRM);
| 型号： | APT30SC60S |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, Schottky, 1 Element, 30A, 600V V(RRM) |
| 文件： | 总3页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1
2
1- Cathode
2- Anode
D3PAK
APT30SC60B 600V 30A
APT30SC60S 600V 30A
Back of Case -Cathode
1
2
SILICON CARBIDE SCHOTTKY RECTIFIER DIODE
PRODUCT FEATURES
PRODUCT BENEFITS
PRODUCT APPLICATIONS
• Schottky Barrier
Majority Carrier Only
• Wide Energy Gap
• High Breakdown Electric
Field
• High Thermal Conductivity
• High Pulse Capability
• Positive Vf Temp Coefficient
• Low Forward Voltage
• No dv/dt Limitation
• Popular TO-247 Package or
Surface Mount D3PAK Package
• Switching Losses Nearly
Eliminated zero recoveryTM
• Greatly Reduced Turn On Loss
• Improved Overall Efficiency
• Enables Higher Freq. Operation
• Simplify Or Eliminate Snubber
Circuits
• High Temperature Operation
• Low Leakage Current
• Radiation Hardness
• High Power Density
• PFC And Forward Topologies
• Hard Or Soft Switched
Topologies
• High Frequency
High Performance
• Thermally Stable Paralleling
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
APT30SC60B_S
Symbol Characteristic / Test Conditions
UNIT
VR
Maximum D.C. Reverse Voltage
VRRM
VRWM
IF(AV)
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC = 126°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 25°C, tp= 10µs)
Power Dissipation (TC = 25°C)
600
Volts
30
53
Amps
IF(RMS)
IFSM
600
PTOT
TJ,TSTG
TL
Watts
°C
366
Operating and StorageTemperature Range
-55 to 175
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
MIN
TYP
1.6
2.4
2.2
MAX
UNIT
IF = 30A, TJ = 25°C
1.8
VF
Forward Voltage
IF = 60A, TJ = 25°C
Volts
IF = 30A, TJ = 175°C
VR = VR Rated, TJ = 25°C
VR = VR Rated, TJ = 175°C
2.4
600
IRM
Maximum Reverse Leakage Current
µA
3000
APT Website - http://www.advancedpower.com
zero recoveryTM, is a Trademark of CREE INC.
DYNAMIC CHARACTERISTICS
APT30SC60B_S
Characteristic / Test Conditions
Symbol
MIN
TYP
150
84
MAX
UNIT
pF
C
QC
tfr
Capacitance (VR = 400V, TC = 25°C, F = 1 MHz)
Total Capacitive Charge (VR = 600V, IF = 30A, diF/dt = 500A/µs, TC = 25°C)
Forward Recovery Time 1
-
nC
-
N/A
N/A
ns
Reverse Recovery Time 1
trr
dv
/
V/ns
Peak Diode Recovery (VR = 480V, di/dt = 1000A/µs, TC = 25°C)
50
dt
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
.41
40
UNIT
RθJC
RθJA
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
°C/W
0.22
5.9
oz
g
WT
Package Weight
10
lb•in
N•m
Torque Maximum Mounting Torque
1.1
1 As a majority carrier device, there is no reverse recovery charge.
APTReservestheright tochange, without notice, thespecificationsandinformationcontainedherein.
0.50
0.40
0.9
0.7
0.5
0.3
0.30
0.20
0.10
0
Note:
t
1
t
2
t
1
Duty Factor D =
/
t
2
0.1
0.05
SINGLEPULSE
10-3
Peak T = P
x Z + T
J
DM
θJC C
10-5
10-4
10-2
10-1
1.0
RECTANGULARPULSEDURATION(seconds)
FIGURE1a.MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvs.PULSEDURATION
RC MODEL
Junction
temp(°C)
0.350 °C/W
0.00379 J/°C
1.11 J/°C
Power
(watts)
0.0604 °C/W
Case temperature(°C)
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
APT30SC60B_S
TYPICAL PERFORMANCE CURVES
100
600
500
400
300
200
T = -55°C
J
80
T = 25°C
J
T = 25°C
J
T = 75°C
J
T = 125°C
J
60
40
T = 175°C
J
T = 175°C
J
T = 125°C
J
T = 75°C
J
20
0
100
0
0
1
2
3
4
5
6
0
200
400
600
800
V ,ANODE-TO-CATHODEVOLTAGE(V)
V , CATHODE-TO-ANODE VOLTAGE (V)
F
R
Figure 2. Forward Current vs. Forward Voltage
Figure 3. Reverse Current vs. Reverse Voltage
60
1800
1600
1400
1200
1000
800
T
= 25°C
= 400V
J
V
R
50
40
30
20
600
400
10
0
200
0
25
50
75
Case Temperature (°C)
Figure 4. Current Derating
100
125
150
175
.2
1
10
100
400
V , REVERSE VOLTAGE (V)
R
Figure5.JunctionCapacitancevs.ReverseVoltage
D3PAKPackageOutline
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
15.85 (.624)
16.05 (.632)
13.30 (.524)
13.60 (.535)
1.49 (.059)
2.49 (.098)
1.00 (.039)
1.15 (.045)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
12.40 (.488)
12.70 (.500)
18.70 (.736)
19.10 (.752)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.65 (.026)
4.50 (.177) Max.
1.20 (.047)
1.40 (.055)
0.020 (.001)
0.250 (.010)
1.90 (.075)
2.10 (.083)
2.40 (.094)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
2.70 (.106)
1.15 (.045)
1.45 (.057)
19.81 (.780)
20.32 (.800)
2.70 (.106)
2.90 (.114)
(Base of Lead)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
(2 Plcs.)
Heat Sink (Cathode)
and Leads
are Plated
Anode
Cathode
2.21 (.087)
2.59 (.102)
Anode
Cathode
Dimensions in Millimeters (Inches)
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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