APT45GR65BSCD10 [MICROSEMI]
Insulated Gate Bipolar Transistor, 92A I(C), 650V V(BR)CES, N-Channel,;
| 型号： | APT45GR65BSCD10 |
| 厂家： | 
Microsemi |
| 描述： | Insulated Gate Bipolar Transistor, 92A I(C), 650V V(BR)CES, N-Channel, 栅 |
| 文件： | 总7页 (文件大小：1050K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT45GR65BSCD10
650V, 45A, VCE(on)= 1.9V Typical
Ultra Fast NPT - IGBT®
(B)
The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs
optimized for outstanding ruggedness and best trade-off between conduction and
switching losses.
D3PA K
Features
G
C
E
• Low Saturation Voltage
• Low Tail Current
• Short Circuit Withstand Rated
• High Frequency Switching
• Ultra Low Leakage Current
• RoHS Compliant
Combi (IGBT and Diode)
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for
applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power
supplies (UPS).
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
Ratings
650
Unit
VCES
VGE
Collector Emitter Voltage
V
Gate-Emitter Voltage
±30
IC1
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
92
IC2
42
A
1
ICM
Pulsed Collector Current
168
SCWT
PD
Short Circuit Withstand Time: VCE = 650V, VGE = 15V, TC=125°C
Total Power Dissipation @ TC = 25°C
10
μs
357
W
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter
Min
650
3.5
Typ
Max
Unit
V(BR)CES
VGE(TH)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA)
Gate Threshold Voltage (VCE = VGE, IC = 1.0mA, Tj = 25°C)
5.0
6.5
2.4
Volts
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 125°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 90A, Tj = 25°C)
1.9
2.4
2.5
20
VCE(ON)
2
Collector Cut-off Current (VCE = 650V, VGE = 0V, Tj = 25°C)
450
ICES
µA
nA
2
Collector Cut-off Current (VCE = 650V, VGE = 0V, Tj = 125°C)
200
IGES
Gate-Emitter Leakage Current (VGE = ±20V)
±250
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
APT45GR65BSCD10
Symbol
Cies
Parameter
Test Conditions
Capacitance
Min
Typ
2900
548
268
7.5
Max
Unit
Input Capacitance
Coes
Output Capacitance
Reverse Transfer Capacitance
Gate to Emitter Plateau Voltage
Total Gate Charge
VGE = 0V, VCE = 25V
f = 1MHz
pF
Cres
VGEP
V
Gate Charge
VGE = 15V
VCE= 325V
IC = 45A
3
Qg
150
18
203
24
Qge
Qgc
Gate-Emitter Charge
nC
74
100
Gate- Collector Charge
td(on)
tr
td(off)
tf
Turn-On Delay Time
Current Rise Time
Inductive Switching (25°C)
VCC = 433V
15
32
ns
µJ
ns
µJ
Turn-Off Delay Time
Current Fall Time
100
50
VGE = 15V
IC = 45A
5
RG = 5Ω 4
Eon
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
830
580
15
1245
875
6
Eoff
TJ = +25°C
td(on)
tr
td(off)
tf
Inductive Switching (125°C)
VCC = 433V
32
Turn-Off Delay Time
Current Fall Time
123
52
VGE = 15V
IC = 45A
5
RG = 5Ω 4
Eon
Turn-On Switching Energy
Turn-Off Switching Energy
850
800
1275
1160
6
Eoff
TJ = +125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
Min
Typ
Max
.35
2.0
40
Unit
Junction to Case Thermal Resistance (IGBT)
RθJC
°C/W
Junction to Case Thermal Resistance (Diode)
RθJA
WT
Junction to Ambient Thermal Resistance
.22
6.2
oz
g
Package Weight
10
in-lbf
N∙m
Torque
Mounting Torque (TO-247 Package), 4-40 or M3 screw
6.2
1
2
3
4
5
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Pulse test: Pulse Width < 380µs, duty cycle < 2%.
See Mil-Std-750 Method 3471.
RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Eon is the clamped inductive turn on energy that includes a commutating diode reverse transient current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.40
0.35
D = 0.9
0.30
0.7
0.25
0.20
0.5
Note:
t
0.15
1
0.3
t
2
0.10
t
1
t
/
2
Duty Factor D =
0.1
0.05
Peak T = P
x Z
+ T
θJC C
J
DM
SINGLE PULSE
0.05
0
10-5
10-4
10-2
10-3
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
TYPICAL PERFORMANCE CURVES
APT45GR65BSCD10
250
100
90
80
70
60
50
40
30
20
10
0
V
= 15V
GE
200
150
100
50
TJ= - 55°C
TJ= 25°C
TJ= 125°C
TJ= 150°C
0
0
10 20 30 40 50 60 70 80 90
0
1
2
3
4
5
I (A)
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
C
CE
FIGURE 2, Max Frequency vs Current (T
= 75°C)
FIGURE 3, Saturation Voltage Characteristics
case
150
4
15V 13V
I
= 90A
C
125
100
75
50
25
0
10V
9.0V
3
2
1
0
I
= 45A
C
8.0V
7.5V
7V
6.5V
I
= 22.5A
C
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
-50 -25
0
25
50
75
100 125
0
2
4
6
8
10 12 14 16 18 20
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
V
J
CE
FIGURE 5, On State Voltage vs Junction Temperature
FIGURE 4, Output Characteristics (T = 25°C)
J
4
200
150
100
50
TJ = 25°C.
250µs PULSE
TEST<0.5 % DUTY
CYCLE
250µs PULSE TEST
<0.5 % DUTY CYCLE
TJ= -55°C
3
I
= 90A
C
I
= 45A
C
2
1
I
= 22.5A
C
TJ= 150°C
TJ= 125°C
TJ= 25°C
0
0
2
4
6
8
10
12
8
10
12
14
16
18
V
, GATE-TO-EMITTER VOLTAGE (V)
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
GE
FIGURE 7, On State Voltage vs Gate-to-Emitter Voltage
FIGURE 6, Transfer Characteristics
120
1.15
1.10
100
80
60
40
20
0
1.05
1.00
0.95
0.90
0.85
0
25
50
75
100
125 150
-50 -25
0
25
50
75
100 125
T , Case Temperature (°C)
T , JUNCTION TEMPERATURE
C
J
FIGURE 9, DC Collector Current vs Case Temperature
FIGURE 8, Breakdown Voltage vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT45GR65BSCD10
1.0E−8
18
16
14
12
10
I
= 45A
C
T
= 25°C
Cies
J
V
= 130V
CE
1.0E−9
1.0E−10
1.0E−11
V
= 325V
CE
Coes
8
V
= 520
CE
Cres
6
4
2
0
0
20 40 60 80 100 120 140 160 180
GATE CHARGE (nC)
0
10
20
30
40
50
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
FIGURE 11, Gate charge
FIGURE 10, Capacitance vs Collector-To-Emitter Voltage
90
1000
VCE = 433V, VGE=15V, RG = 5Ω
TJ = 25°C or 125°C
80
70
60
50
40
30
20
10
0
T
T
d(off)
r
100
T
T
f
d(on)
VCE = 433V, VGE=15V, RG = 5Ω
TJ = 25°C
TJ = 125°C
10
0
I
20
40
60
80
100
0
20
40
60
80
100
, COLLECTOR-TO-EMITTER CURRENT (A)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 12, Turn-On Time vs Collector Current
FIGURE 13, Turn-Off Time vs Collector Current
900
800
700
600
500
400
300
200
100
2500
2000
1500
1000
500
0
E
off
E
off
E
on
E
on
VCE = 650V, VGE=15V, RG = 5Ω
TJ = 25°C
TJ = 125°C
VCE = 650V, VGE=15V, IC = 45A
TJ = 125°C
0
10
20
30
40
50
0
10
20
30
40
50
R , GATE RESISTANCE (Ω)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
G
CE
FIGURE 15, Energy Loss vs Gate Resistance
FIGURE 14, Energy Loss vs Collector Current
1000
800
600
400
200
1000
100
10
E
on
E
off
.1ms
1ms
1
10ms
VCE = 650V, VGE=15V, RG = 5Ω
100ms
IC = 45A
0
0.1
1
10
100
1000
0
25
50
75
100
125
V
, COLLECTOR-TO-EMITTER VOLTAGE
CE
T , JUNCTION TEMPERATURE (°C)
J
FIGURE 17, Minimum Switching Safe Operating Area
FIGURE 16, Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT45GR65BSCD10
ZERO RECOVERY LOW LEAKAGE SIC ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol Characteristic / Test Conditions
Ratings
Unit
TC = 25°C
17
9
IF
Maximum D.C. Forward Current
TC = 100°C
Amps
IFRM
IFSM
50
Repetitive Peak Forward Surge Current (TJ = 45°C, tp = 10ms, Half Sine Wave)
Non-Repetitive Forward Surge Current (TJ = 25°C, tp = 10ms, Half Sine)
110
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
Typ
Max
Unit
IF = 10A TJ = 25°C
IF = 10A, TJ = 150°C
1.5
2.0
80
VF
Qc
Forward Voltage
Volts
nC
Total Capactive Charge VR = 300V, IF = 10A, di/dt = -500A/µs, TJ = 25°C
Junction Capacitance VR = 1V, TJ = 25°C, f = 1MHz
300
72
CT
Junction Capacitance VR = 100V, TJ = 25°C, f = 1MHz
Junction Capacitance VR = 300V, TJ = 25°C, f = 1MHz
pF
47
2.5
2.0
1.5
1.0
Note:
t
1
t
2
0.5
0
t
1
t
/
2
Duty Factor D =
Peak T = P x Z
+ T
C
J
DM
θJC
10-5
10-4
10-3
10-2
0.1
1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 18. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
20
18
16
14
12
10
T
= -55°C
J
T
= 25°C
J
15
10
T
= 125°C
J
T
= 150°C
J
8
6
4
2
0
5
0
0
1
2
3
4
25
50
75
Case Temperature (°C)
FIGURE 20, Maximum Forward Current vs. Case Temperature
100
125
150
V , ANODE-TO-CATHODE VOLTAGE (V)
F
FIGURE 19, Forward Current vs. Forward Voltage
APT45GR65BSCD10
TYPICAL PERFORMANCE CURVES
70
120
100
80
60
50
40
30
20
10
0
60
40
20
0
0
100
200
300
400
500 600
25
50
75
100
125
150
CASE TEMPERATURE (°C)
Figure 21. Maximum Power Dissipation vs. Case Temperature
VR, REVERSE VOLTAGE (V)
Figure 22. Reverse Recovery Charge vs. VR
350
300
250
200
150
100
50
0
0
100
200
300
400
V , REVERSE VOLTAGE (V)
R
Figure 23. Junction Capacitance vs. Reverse Voltage
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters (Inches)
APT45GR65BSCD10
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