APT5017BVFRG [MICROSEMI]
Power Field-Effect Transistor, 30A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN;型号: | APT5017BVFRG |
厂家: | Microsemi |
描述: | Power Field-Effect Transistor, 30A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总4页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APT5017BVFR
APT5017SVFR
500V 30A 0.170Ω
POWER MOS V®
FREDFET
TO-247
D3PAK
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
D
S
• Fast Recovery Body Diode
• Lower Leakage
• 100% Avalanche Tested
• Faster Switching
FREDFET
G
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT5017BVFR_SVFR
UNIT
VDSS
ID
Drain-Source Voltage
500
30
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
120
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
370
Watts
W/°C
PD
2.96
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
30
1
EAR
EAS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
500
30
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.17
250
1000
±100
4
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT5017BVFR_SVFR
Test Conditions
GS = 0V
MIN
MIN
MIN
TYP
4400
600
230
200
30
MAX
5280
840
350
300
45
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
V
Output Capacitance
pF
VDS = 25V
f = 1 MHz
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
VDD = 0.5 VDSS
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
ID = ID [Cont.] @ 25°C
80
120
25
12
VGS = 15V
VDD = 0.5 VDSS
14
30
ID = ID [Cont.] @ 25°C
td(off)
tf
Turn-off Delay Time
Fall Time
55
80
VG = 1.6Ω
11
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
TYP
MAX
30
UNIT
Continuous Source Current (Body Diode)
IS
Amps
1
ISM
VSD
Pulsed Source Current (Body Diode)
120
1.3
5
2
Diode Forward Voltage
Peak Diode Recovery dv
Reverse Recovery Time
(VGS = 0V, IS = -ID [Cont.])
Volts
V/ns
5
dv
/
/
dt
dt
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
525
ns
µC
trr
(IS = -ID [Cont.], di
Reverse Recovery Charge
(IS = -ID [Cont.], di
dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di
dt = 100A/µs)
/dt = 100A/µs)
1.6
6.0
13
Qrr
/
IRRM
Amps
/
21
THERMAL CHARACTERISTICS
Symbol Characteristic
TYP
MAX
0.34
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 2.89mH, R = 25Ω, Peak I = 30A
j
G
L
di
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
I
S
≤ -I [Cont.],
/
= 100A/µs, V ≤ V
, T ≤ 150°C, R = 2.0Ω,
DSS j G
D
DD
dt
V
R
= 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.9
0.7
0.5
0.3
0.30
0.25
0.20
0.15
0.10
0.05
0
Note:
t
1
t
2
t
1
Duty Factor D =
/
t
2
SINGLE PULSE
Peak T = P
x Z + T
0.1
J
DM
θJC C
0.05
10-5
10-4
10-3
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-2
10-1
1.0
Typical Performance Curves
APT5017BVFR_SVFR
60
60
50
40
30
20
10
0
V
=6V, 7V, 8V, 10V & 15V
GS
V
=15V
GS
6V
50
40
30
20
10
0
V
=7V, 8V & 10V
GS
5.5V
5.5V
5V
4V
5V
4V
4.5V
4.5V
10
0
V
50
100
150
200
250
0
V
2
4
6
8
12
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
60
1.5
T
= -55°C
NORMALIZED TO
= 10V 0.5 [Cont.]
J
V
@
I
D
GS
T
= +125°C
J
V
> I (ON) x
R
(ON)MAX.
DS
250µSEC. PULSE TEST
50
40
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.9
DS
D
@ <0.5 % DUTY CYCLE
V
=10V
GS
V
=20V
GS
T
= +125°C
= +25°C
J
T
= -55°C
6
T
J
J
0
V
2
4
8
0
20
40
60
80
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
30
1.15
1.10
1.05
1.00
0.95
0.90
0.85
25
20
15
10
5
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT5017BVFR_SVFR
Typical Performance Curves
200
20,000
10,000
5,000
10µS
100
OPERATION HERE
LIMITED BY R
DS
(ON)
100µS
50
C
iss
1mS
10
5
C
oss
10mS
1,000
500
C
100mS
DC
rss
1
T
T
=+25°C
=+150°C
C
J
.5
SINGLE PULSE
.1
100
1
V
5
10
50 100
500
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
300
20
16
12
8
I
= I [Cont.]
D
D
V
=100V
DS
=250V
100
V
T
=+150°C
T =+25°C
J
DS
J
50
V
=400V
DS
10
5
4
1
0
0
50
100 150 200 250 300 350
0
V
0.4
0.8
1.2
1.6
2.0
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
g
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
D3PAK Package Outline
TO-247 Package Outline
4.98 (.196)
4.69 (.185)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
5.31 (.209)
5.08 (.200)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
1.47 (.058)
1.57 (.062)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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