APT6010B2LL [MICROSEMI]

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。


型号：	APT6010B2LL
厂家：	Microsemi
描述：	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。晶体晶体管开关脉冲
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中文：	中文翻译
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600V 54A 0.100Ω

APT6010B2LL APT6010LLL

APT6010B2LL* APT6010LLLG*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

B2LL

POWER MOS 7 MOSFET

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with Microsemi's

patented metal gate structure.

T-MAX™

TO-264

LLL

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• Increased Power Dissipation

• Easier To Drive

• Popular T-MAX™ or TO-264 Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT6010B2_LLL

UNIT

V_DSS

I_D

Drain-Source Voltage

600

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

216

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

±30

±40

Watts

W/°C

690

P_D

5.52

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3000

STATICELECTRICALCHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Volts

Ohms

BV_DSS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

600

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 27A)

0.100

100

500

±100

Zero Gate Voltage Drain Current (V_DS= 600V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 480V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

I_DSS

µA

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

DYNAMIC CHARACTERISTICS

Symbol Characteristic

APT6010B2_LLL

TestConditions

MIN

TYP

MAX

UNIT

C_iss

C_oss

C_rss

Q_g

Input Capacitance

6710

1250

= 0V

Output Capacitance

= 25V

f = 1 MHz

Reverse Transfer Capacitance

Total Gate Charge

= 10V

150

= 300V

Q_gs

Q_gd

t_d(on)

t_r

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

= 54A @ 25°C

RESISTIVESWITCHING

= 15V

= 300V

µJ

= 54A @ 25°C

t_d(off)

Turn-off Delay Time

Fall Time

= 0.6Ω

t_f

INDUCTIVESWITCHING@25°C

E_on

E_off

E_on

E_off

Turn-on Switching Energy

885

= 400V, V = 15V

= 54A, R = 5Ω

Turn-off Switching Energy

970

INDUCTIVESWITCHING@125°C

1150

1220

Turn-on Switching Energy

= 400V V = 15V

= 54A, R = 5Ω

Turn-off Switching Energy

SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS

Symbol

Characteristic / Test Conditions

UNIT

MIN

TYP

MAX

I_S

Continuous Source Current (Body Diode)

Amps

I_SM

216

1.3

Pulsed Source Current

Diode Forward Voltage

(Body Diode)

V_SD

t _rr

(V_GS= 0V, I_S= -54A)

Volts

Reverse Recovery Time (I_S= -54A, dl_S/dt = 100A/µs)

Reverse Recovery Charge (I_S= -54A, dl_S/dt = 100A/µs)

790

Q _rr

µC

V/ns

Peak Diode Recovery

THERMALCHARACTERISTICS

Symbol Characteristic

MIN

TYP

MAX

0.18

UNIT

R_θJC

R_θJA

Junction to Case

°C/W

Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

4 Starting T = +25°C, L = 2.06mH, R = 25Ω, Peak I = 54A

numbers reflect the limitations of the test circuit rather than the

device itself.

≤ -I 54A

≤ 700A/µs

_R≤ 600V T ≤ 150°C

3 See MIL-STD-750 Method 3471

6 Eon includes diode reverse recovery. See figures 18, 20.

Microsemireservestherighttochange,withoutnotice,thespecificationsandinforationcontainedherein.

0.20

D = 0.9

0.16

0.7

0.12

0.5

Note:

0.08

0.3

0.04

Duty Factor D =

0.1

Peak T = P

x Z + T

θJC C

SINGLEPULSE

0.05

10^-5

10^-4

10^-3

10^-2

10^-1

1.0

RECTANGULARPULSEDURATION(SECONDS)

FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

Typical Performance Curves

APT6010B2_LLL

140

=15 &10V

120

100

7.5V

T_J( C)

T_C( C)

0.0271

0.0656

0.859

Dissipated Power

(Watts)

6.5V

0.009

0.0202

0.293

Z_EXTare the external thermal

impedances: Case to sink,

sink to ambient, etc. Set to

zero when modeling only

the case to junction.

5.5V

,DRAIN-TO-SOURCEVOLTAGE(VOLTS)

FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL

FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS

1.40

160

NORMALIZED TO

> I (ON) x

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

(ON)MAX.

= 10V

27A

140

120

100

1.30

1.20

1.10

1.00

=10V

=20V

= +125°C

= -55°C

0.90

0.80

= +25°C

100

,GATE-TO-SOURCEVOLTAGE(VOLTS)

I ,DRAINCURRENT(AMPERES)

FIGURE4, TRANSFERCHARACTERISTICS

FIGURE5,R (ON)vsDRAINCURRENT

1.15

1.10

1.05

1.00

0.95

0.90

100

125

150

-50 -25

25 50 75 100 125 150

T ,CASETEMPERATURE(°C)

T ,JUNCTIONTEMPERATURE(°C)

FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE

FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE

1.2

2.5

= 27A

= 10V

1.1

1.0

0.9

2.0

1.5

1.0

0.8

0.5

0.0

0.7

0.6

-50 -25

25 50

75 100 125 150

-50 -25

25 50 75 100 125 150

T ,JUNCTIONTEMPERATURE(°C)

T ,CASETEMPERATURE(°C)

FIGURE8,ON-RESISTANCEvs.TEMPERATURE

FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE

APT6010B2_LLL

220

100

20,000

10,000

OPERATIONHERE

LIMITEDBYR (ON)

iss

oss

1,000

100µS

100

1mS

=+25°C

rss

T =+150°C

SINGLEPULSE

10mS

100

600

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

200

= 54A

=120V

=300V

100

=+150°C

=480V

=+25°C

0.3

100

150

200

250

0.5

0.7

0.9

1.1

1.3

1.5

Q , TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE

120

140

= 400V

= 5Ω

d(off)

120

100

= 125°C

100

L = 100µH

= 400V

= 5Ω

= 125°C

L = 100µH

d(on)

10 20

50 60

(A)

10 20 30 40

50 60

I (A)

80 90

FIGURE 14, DELAY TIMES vs CURRENT

FIGURE 15, RISE AND FALL TIMES vs CURRENT

2500

2000

1500

1000

5000

4000

3000

2000

= 400V

= 5Ω

= 54A

= 125°C

L = 100µH

off

E_ONincludes

diode reverse recovery

1000

500

10 20

(A)

70 80 90

10 15 20 25 30 35 40 45 50

R ,GATERESISTANCE(Ohms)

FIGURE16, SWITCHING ENERGYvs CURRENT

FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

APT6010B2_LLL

90%

GateVoltage

10%

GateVoltage

T 125°C

t_d(off)

t_d(on)

DrainCurrent

DrainVoltage

t_r

DrainVoltage

DrainCurrent

90%

t_f

10%

SwitchingEnergy

Figure18,Turn-onSwitchingWaveformsandDefinitions

Figure19,Turn-offSwitchingWaveformsandDefinitions

APT30DF60

V_DS

I_D

V_DD

D.U.T.

Figure 20, Inductive Switching Test Circuit

T-MAX^TM(B2)PackageOutline

TO-264(L)PackageOutline

SAC: Tin, Silver, Copper

4.69 (.185)

5.31 (.209)

4.60 (.181)

5.21 (.205)

15.49 (.610)

16.26 (.640)

19.51 (.768)

20.50 (.807)

1.49 (.059)

2.49 (.098)

1.80 (.071)

2.01 (.079)

3.10 (.122)

3.48 (.137)

5.38 (.212)

6.20 (.244)

5.79 (.228)

6.20 (.244)

20.80 (.819)

21.46 (.845)

25.48 (1.003)

26.49 (1.043)

2.87 (.113)

3.12 (.123)

4.50 (.177) Max.

2.29 (.090)

2.69 (.106)

2.29 (.090)

2.69 (.106)

1.65 (.065)

2.13 (.084)

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

19.81 (.780)

21.39 (.842)

Gate

Drain

Source

Gate

Drain

Source

1.01 (.040)

1.40 (.055)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

0.76 (.030)

1.30 (.051)

2.21 (.087)

2.59 (.102)

2.79 (.110)

5.45 (.215) BSC

2-Plcs.

3.18 (.125)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

These dimensions are equal to the TO-247 without the mounting hole.

Dimensions in Millimeters and (Inches)

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