APT6010LLLE3 [MICROSEMI]
Power Field-Effect Transistor, 54A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN;
| 型号： | APT6010LLLE3 |
| 厂家： | 
MICROSEMI CORPORATION |
| 描述： | Power Field-Effect Transistor, 54A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN 局域网 高压 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：259K) |
| 下载： | 下载PDF数据表文档文件 |
APT6010LLLG
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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17
MICROSEMI
APT6011B2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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29
ADPOW
APT6011B2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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14
ADPOW
APT6011B2VFR_04
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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25
ADPOW
APT6011B2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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20
ADPOW
APT6011B2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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10
ADPOW
APT6011B2VR_04
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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21
ADPOW
APT6011B2VRG
Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT6011LVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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20
ADPOW
APT6011LVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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10
ADPOW
APT6011LVFRG
Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT6011LVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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11
ADPOW
APT6011LVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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26
ADPOW
APT6013B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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25
ADPOW
APT6013B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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23
ADPOW
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