APT6015B2VFRG [MICROSEMI]
Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3;
| 型号： | APT6015B2VFRG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT6015B2VFR
APT6015LVFR
600V 38A 0.150Ω
B2VFR
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVFR
• Fast Recovery Body Diode
• Lower Leakage
• Avalanche Energy Rated
• T-MAX™ or TO-264 Package
D
S
G
• Faster Switching
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT6015B2VFR_LVFR
UNIT
VDSS
ID
Drain-Source Voltage
600
38
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
152
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
W/°C
520
PD
4.16
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
38
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
600
38
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.150
250
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
1000
±100
4
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT6015B2VFR_LVFR
Test Conditions
GS = 0V
MIN
MIN
MIN
TYP
7500
900
320
315
45
MAX
9000
1260
480
475
70
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
V
Output Capacitance
VDS = 25V
f = 1 MHz
pF
Reverse Transfer Capacitance
3
VGS = 10V
VDD = 0.5 VDSS
Total Gate Charge
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
ID = ID [Cont.] @ 25°C
125
15
190
30
VGS = 15V
VDD = 0.5 VDSS
13
26
ID = ID [Cont.] @ 25°C
td(off)
tf
Turn-off Delay Time
Fall Time
45
70
RG = 0.6Ω
5
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
TYP
MAX
38
UNIT
Continuous Source Current (Body Diode)
IS
Amps
1
ISM
VSD
Pulsed Source Current (Body Diode)
152
1.3
15
2
Diode Forward Voltage
Peak Diode Recovery dv
Reverse Recovery Time
(VGS = 0V, IS = -ID [Cont.])
Volts
V/ns
5
dv
/
/
dt
dt
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
500
ns
µC
trr
(IS = -ID [Cont.], di
Reverse Recovery Charge
(IS = -ID [Cont.], di
dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di
dt = 100A/µs)
/dt = 100A/µs)
1.6
5.5
15
Qrr
/
IRRM
Amps
/
27
THERMAL CHARACTERISTICS
Symbol Characteristic
TYP
MAX
0.24
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 3.46mH, R = 25Ω, Peak I = 38A
j
L
di
I ≤ I [Cont.],
/
= 100A/µs, T ≤G150°C, R = 2.0Ω, V = 200V.
S
D
j
G
R
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.01
0.02
t
1
0.005
0.01
t
2
SINGLE PULSE
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT6015B2VFR_LVFR
100
80
60
40
20
0
100
80
60
40
20
0
V
=6V, 7V, 10V & 15V
GS
5.5V
V
=6V, 7V, 10V & 15V
GS
5.5V
5V
5V
4.5V
4.5V
4V
4V
0
V
50
100
150
200
250
300
0
V
4
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
8
12
16
20
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
100
80
60
40
20
0
1.6
T
= -55°C
J
NORMALIZED TO
V
= 10V
@
0.5 I [Cont.]
GS
D
T
= +25°C
J
T
= +125°C
1.4
1.2
1.0
0.8
J
V
> I (ON) x
R (ON)MAX.
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
DS
D
V
=10V
GS
V
=20V
GS
T
= +125°C
= +25°C
J
T
T
= -55°C
6
J
J
0
V
2
4
8
0
20
40
60
80
100
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
40
1.15
1.10
1.05
30
20
10
0
1.00
0.95
0.90
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT6015B2VFR_LVFR
200
100
50
30,000
10µS
OPERATION HERE
LIMITED BY R (ON)
DS
100µS
C
iss
10,000
5,000
1mS
10
5
C
oss
10mS
1,000
500
C
rss
100mS
DC
1
T
T
=+25°C
=+150°C
C
J
.5
SINGLE PULSE
.1
100
1
5
10
50 100
600
.01
V
.1
1
10
50
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
8
200
I
= I [Cont.]
D
D
100
V
=120V
DS
=300V
T
=+150°C
T =+25°C
J
J
V
DS
50
V
=480V
DS
10
5
4
1
0
0
100
g
200
300
400
500
600
0
0.4
0.8
1.2
1.6
2.0
Q , TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
T-MAXTM (B2) Package Outline (B2VFR)
TO-264 (L) Package Outline (LVFR)
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
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