APT6040SVR [MICROSEMI]
Power Field-Effect Transistor, 15A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3;
| 型号： | APT6040SVR |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 15A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT6040BVR
APT6040SVR
600V 16A 0.400Ω
BVR
POWER MOS V®
D3PAK
TO-247
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
SVR
G
D
S
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
• Popular TO-247 Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT6040BVR
UNIT
VDSS
ID
Drain-Source Voltage
600
16
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
64
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
250
2
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
W/°C
PD
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
16
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
1
EAR
EAS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
600
16
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 8A)
Ohms
µA
0.40
25
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
IDSS
250
±100
4
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT6040BVR
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
2600
305
125
115
15
3120
425
180
170
25
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
VDD = 300V
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = 16A @ 25°C
52
75
td(on)
tr
td(off)
tf
VGS = 15V
10
20
VDD = 300V
9
18
ID = 16A @ 25°C
Turn-off Delay Time
Fall Time
38
50
RG = 1.6Ω
6
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
16
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
64
2
(VGS = 0V, IS = -15A)
1.3
Volts
ns
Reverse Recovery Time (IS = -15A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -15A, dlS/dt = 100A/µs)
400
6
Q rr
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.50
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 7.50mH, R = 25ý, Peak I = 16A
j
G
L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
Note:
0.02
0.01
0.01
t
1
0.005
SINGLE PULSE
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT6040BVR/SVR
30
30
V
=15V
V
=6V, 7V, 10V & 15V
6V
GS
=7V, 10V
GS
V
GS
24
18
24
18
5.5V
5V
5.5V
5V
12
6
12
6
4.5V
4V
4.5V
4V
0
0
0
V
50
100
150
200
250
300
0
V
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
10
15
20
25
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
30
1.5
NORMALIZED TO
V
= 10V @ 8A
GS
V
> I (ON) x
DS
R
(ON)MAX.
DS
D
1.4
1.3
1.2
1.1
1.0
0.9
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
24
18
V
=10V
GS
12
6
V
=20V
GS
T
T
= +125°C
= +25°C
J
T
= -55°C
6
J
J
0
0
V
2
4
8
0
6
12
18
24
30
36
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
16
1.15
1.10
1.05
12
8
1.00
0.95
0.90
4
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
I
= 8A
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT6040BVR/SVR
100
50
10,000
5,000
10µS
OPERATION HERE
LIMITED BY R (ON)
100µS
C
iss
DS
10
5
1mS
1,000
500
C
oss
10mS
C
rss
1
100mS
DC
T
T
=+25°C
=+150°C
C
J
0.5
SINGLE PULSE
100
50
0.1
1
V
5
10
50 100
600
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
8
50
I
= 8A
D
V
=120V
DS
T
=+150°C
T =+25°C
J
J
V
=300V
DS
10
5
V
=480V
DS
1
.5
4
0
.1
0
50
g
100
150
200
250
0.2
V
0.4
0.6
0.8
1.0
1.2
1.4
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
D3PAK Package Outline
TO-247 Package Outline
4.98 (.196)
4.69 (.185)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
5.31 (.209)
5.08 (.200)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
1.47 (.058)
1.57 (.062)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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