APT6045BVFRG [MICROSEMI]

POWER MOS V® FREDFET; 功率MOS V® FREDFET


型号：	APT6045BVFRG
厂家：	Microsemi
描述：	POWER MOS V® FREDFET 功率MOS V® FREDFET
文件：	总4页 (文件大小：133K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

APT6045BVFR

APT6045SVFR

APT6045BVFRG APT6045SVFRG

600V 15A 0.45 Ω

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

BVFR

POWER MOS V^®FREDFET

Power MOS V^®is a new generation of high voltage N-Channel enhance-

ment mode power MOSFETs. This new technology minimizes the JFET ef-

fect, increases packing density and reduces the on-resistance. Power MOS

D³PAK

V^®also achieves faster switching speeds through optimized gate layout.

SVFR

• Faster Switching

• Lower Leakage

• Avalanche Energy Rated

•

FAST RECOVERY BODY DIODE

• TO-247 or Surface Mount D³PAK Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise speciﬁed.

APT6045B_SVFR(G)

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

600

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

250

2.0

Watts

W/°C

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

P_D

T_J,T_STGOperating and Storage Junction Temperature Range

-55 to 150

300

°C

Amps

T_L

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

960

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

UNIT

Volts

MIN

TYP

MAX

BV_DSS

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250μA)

600

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 7.5A)

Ohms

0.45

250

1000

±100

Zero Gate Voltage Drain Current (V_DS= 600V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 480V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

μA

I_GSS

Volts

V_GS(th)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

APT6045B_SVFR(G)

DYNAMIC CHARACTERISTICS

Symbol Characteristic

MIN

TYP

MAX

UNIT

Test Conditions

C_iss

C_oss

C_rss

Q_g

Input Capacitance

2600

305

125

115

3120

425

180

170

V_GS= 0V

Output Capacitance

_DS= 25V

f = 1 MHz

Reverse Transfer Capacitance

V_GS= 10V

V_DD= 300V

Total Gate Charge

Q_gs

Q_gd

t_d(on)

t_r

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

I_D= 15A @ 25°C

V_GS= 15V

V_DD= 300V

I_D= 15A @ 25°C

R_G= 1.6Ω

t_d(off)

t_f

Turn-off Delay Time

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions

UNIT

MIN

TYP

MAX

I_S

Continuous Source Current (Body Diode)

Amps

I_SM

Pulsed Source Current (Body Diode)

V_SD

Volts

V/ns

Diode Forward Voltage

Peak Diode Recovery ^dv

Reverse Recovery Time

(V_GS= 0V, I_S= -15A)

1.3

T_j= 25°C

T_j= 125°C

T_j= 25°C

T_j= 125°C

T_j= 25°C

T_j= 125°C

250

500

t_rr

μC

(I_S= -15A, ^di

Reverse Recovery Charge

(I_S= -15A, ^di

_dt= 100A/μs)

Peak Recovery Current

(I_S= -15A, ^di

_dt= 100A/μs)

/_dt= 100A/μs)

1.9

Q_rr

Amps

I_RRM

THERMAL CHARACTERISTICS

Symbol Characteristic

UNIT

MIN

TYP

MAX

0.50

Junction to Case

R_θJC

Junction to Ambient

R_θJA

°C/W

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

4 Starting T = +25°C, L = 8.50mH, R = 25Ω, Peak I = 15A

/ numbers reﬂect the limitations of the test circuit rather than the

2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

device itself.

≤ -I 14A

≤ 700A/μs

_R≤ 600V T ≤ 150°C

Microsemi Reserves the right to change, without notice, the speciﬁcations and information contained herein.

0.5

D=0.5

0.2

0.1

0.05

0.02

Note:

0.01

0.005

SINGLE PULSE

Duty Factor D =

Peak T = P

x Z

+ T

θJC C

0.001

10^-5

10^-4

10^-3

10^-2

10^-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

Typical Performance Curves

APT6045B_SVFR(G)

V_GS=15V

V_GS=7V, 10V

V_GS=6V, 7V, 10V & 15V

5.5V

4.5V

100

150

200

250

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS

FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

1.5

NORMALIZED TO

= 10V 7.5A

V_DS> I_D(ON) x R_DS(ON)MAX.

1.4

1.3

1.2

1.1

1.0

0.9

250μSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

V_GS=10V

V_GS=20V

T_J= +125°C

T_J= -55°C

T_J= +25°C

, GATE-TO-SOURCE VOLTAGE (VOLTS)

I , DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS

FIGURE 5, R (ON) vs DRAIN CURRENT

1.15

1.10

1.05

1.00

0.95

0.90

100

125

150

-50 -25

25 50 75 100 125 150

T , CASE TEMPERATURE (°C)

T , JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

1.2

2.5

= 7.5A

= 10V

1.1

1.0

0.9

0.8

0.7

0.6

2.0

1.5

1.0

0.5

0.0

-50 -25

25 50

75 100 125 150

-50 -25

25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

T , CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

APT6045B_SVFR(G)

100

10,000

5,000

10μS

OPERATION HERE

LIMITED BY R (ON)

100μS

C_iss

1mS

1,000

500

C_oss

C_rss

10mS

100mS

T_C=+25°C

T_J=+150°C

0.5

SINGLE PULSE

100

0.1

50 100

600

.01

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

= 7.5A

V_DS=120V

V_DS=300V

T_J=+150°C

T_J=+25°C

V_DS=480V

100

150

200

250

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Q , TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

D³PAK Package Outline

TO-247 (B) Package Outline

e3 100% Sn Plated

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

4.69 (.185)

15.95 (.628)

16.05(.632)

13.41 (.528)

13.51(.532)

5.31 (.209)

15.49 (.610)

16.26 (.640)

1.04 (.041)

1.15(.045)

1.49 (.059)

2.49 (.098)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

Revised

8/29/97

11.51 (.453)

11.61 (.457)

13.79 (.543)

13.99(.551)

Revised

4/18/95

20.80 (.819)

21.46 (.845)

3.50 (.138)

3.81 (.150)

0.46 (.018)

0.56 (.022)

{3 Plcs}

1.27 (.050)

1.40 (.055)

0.020 (.001)

0.178 (.007)

2.87 (.113)

3.12 (.123)

3.81 (.150)

4.50 (.177) Max.

1.98 (.078)

2.08 (.082)

4.06 (.160)

2.67 (.105)

2.84 (.112)

(Base of Lead)

1.65 (.065)

2.13 (.084)

1.22 (.048)

1.32 (.052)

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

Heat Sink (Collector)

and Leads

are Plated

5.45 (.215) BSC

{2 Plcs.}

1.01 (.040)

1.40 (.055)

Gate

Drain

Source

Drain

Gate

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters (Inches)

Dimensions in Millimeters and (Inches)

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583

4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

APT6045BVFRG [MICROSEMI]

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