APT6045BVR [MICROSEMI]
Power Field-Effect Transistor, 15A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN;
| 型号： | APT6045BVR |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 15A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN 局域网 高压 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT6045BVR
APT6045SVR
APT6045BVRG APT6045SVRG
600V 15A 0.45 Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
BVR
POWER MOS V®
D3PAK
Power MOS V® is a new generation of high voltage N-Channel enhance-
ment mode power MOSFETs. This new technology minimizes the JFET ef-
fect, increases packing density and reduces the on-resistance. Power MOS
SVR
V® also achieves faster switching speeds through optimized gate layout.
D
S
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
• Popular TO-247 Package
G
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol
VDSS
ID
Parameter
APT6045B_SVR(G)
UNIT
Drain-Source Voltage
Volts
600
15
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
60
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
250
2
VGSM
Watts
W/°C
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
PD
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
15
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
1
EAR
EAS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol
MIN
TYP
MAX
Characteristic / Test Conditions
UNIT
BVDSS
600
15
Volts
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
2
ID(on)
Amps
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
2
RDS(on)
0.45
25
Ohms
Drain-Source On-State Resistance
(VGS = 10V, 7.5A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
IDSS
μA
250
±100
4
IGSS
nA
VGS(th)
2
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT6045B_SVR(G)
Test Conditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
2600
305
125
115
15
3120
425
180
170
25
VGS = 0V
Output Capacitance
V
DS = 25V
pF
f = 1 MHz
Reverse Transfer Capacitance
3
VGS = 10V
VDD = 300V
Total Gate Charge
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = 15A @ 25°C
52
75
VGS = 15V
VDD = 300V
10
20
9
18
ID = 15A @ 25°C
RG = 1.6Ω
td(off)
tf
Turn-off Delay Time
Fall Time
38
50
6
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
MIN
TYP
MAX
15
Symbol
IS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Amps
1
ISM
60
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
Volts
ns
VSD
t rr
1.3
(VGS = 0V, IS = -15A)
400
6
Reverse Recovery Time (IS = -15A, dlS/dt = 100A/μs)
Reverse Recovery Charge (IS = -15A, dlS/dt = 100A/μs)
Q rr
μC
THERMAL CHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
0.50
40
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 8.50mH, R = 25Ω, Peak I = 15A
j
G
L
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.01
Note:
0.01
t
1
0.005
SINGLE PULSE
t
2
t
1
t
/
2
Duty Factor D =
Peak T = P
x Z
+ T
θJC C
J
DM
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT6045B_SVR(G)
30
30
VGS=15V
VGS=7V, 10V
VGS=6V, 7V, 10V & 15V
6V
24
18
24
18
5.5V
5V
5.5V
5V
12
6
12
6
4.5V
4V
4.5V
4V
0
0
0
V
50
100
150
200
250
300
0
V
5
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
15
20
25
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
1.5
30
NORMALIZED TO
= 10V 7.5A
V
@
GS
VDS> ID (ON) x RDS (ON)MAX.
1.4
1.3
1.2
1.1
1.0
0.9
250μSEC. PULSE TEST
24
@ <0.5 % DUTY CYCLE
18
12
VGS=10V
VGS=20V
TJ = +125°C
6
TJ = -55°C
6
TJ = +25°C
0
0
V
2
4
8
0
6
12
18
24
30
36
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
1.15
16
1.10
1.05
12
8
1.00
0.95
0.90
4
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
I
= 7.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT6045B_SVR(G)
100
50
10,000
5,000
10μS
OPERATION HERE
LIMITED BY R (ON)
100μS
Ciss
DS
10
5
1mS
1,000
500
Coss
Crss
10mS
1
100mS
DC
TC =+25°C
TJ =+150°C
0.5
SINGLE PULSE
100
50
0.1
1
V
5
10
50 100
600
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
8
50
I
= 7.5A
D
VDS=120V
VDS=300V
TJ =+150°C
TJ =+25°C
10
5
VDS=480V
1
.5
4
0
.1
0
50
100
150
200
250
0.2
V
0.4
0.6
0.8
1.0
1.2
1.4
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
g
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
D3PAK Package Outline
TO-247 (B) Package Outline
e3 100% Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15(.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Collector)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters (Inches)
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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