APT65GP60B2G [MICROSEMI]
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TMAX-3;
| 型号： | APT65GP60B2G |
| 厂家： | 
Microsemi |
| 描述： | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TMAX-3 栅 瞄准线 功率控制 晶体管 |
| 文件： | 总6页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT65GP60B2
600V
®
POWER MOS 7 IGBT
T-MaxTM
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
highvoltageswitchingapplicationsandhasbeenoptimizedforhighfrequency
switchmode power supplies.
G
C
E
• Low Conduction Loss
• Low Gate Charge
• 100 kHz operation @ 400V, 54A
• 50 kHz operation @ 400V, 76A
• SSOA rated
C
E
• Ultrafast Tail Current shutoff
G
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
UNIT
Symbol
VCES
VGE
APT65GP60B2
Collector-Emitter Voltage
Gate-Emitter Voltage
600
±20
±30
Volts
VGEM
IC1
Gate-Emitter Voltage Transient
7
100
96
Continuous Collector Current @ TC = 25°C
Amps
IC2
Continuous Collector Current @ TC = 110°C
1
ICM
250
Pulsed Collector Current
@ TC = 25°C
SSOA
PD
Safe Operating Area @ TJ = 150°C
250A@600V
833
Watts
°C
Total Power Dissipation
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
600
3
TYP
MAX
UNIT
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1000µA)
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 2.5mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 65A, Tj = 25°C)
4.5
2.2
2.1
6
Volts
2.7
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 65A, Tj = 125°C)
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
1000
5000
±100
µA
nA
ICES
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
IGES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT65GP60B2
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
TYP
7400
580
35
MAX
UNIT
Input Capacitance
Cies
Coes
Cres
VGEP
Qg
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Output Capacitance
pF
V
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
7.5
Gate Charge
3
VGE = 15V
Total Gate Charge
210
50
VCE = 300V
Qge
nC
Gate-Emitter Charge
IC = 65A
Qgc
Gate-Collector ("Miller") Charge
Safe Operating Area
65
SSOA
TJ = 150°C, RG = 5Ω, VGE
=
250
A
15V, L = 100µH,VCE = 600V
td(on)
tr
td(off)
tf
30
54
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Inductive Switching (25°C)
VCC = 400V
ns
VGE = 15V
91
IC = 65A
65
R
G = 5Ω
4
Eon1
Eon2
Eoff
td(on)
tr
Turn-on Switching Energy
605
1408
896
30
TJ = +25°C
5
Turn-on Switching Energy (Diode)
µJ
ns
6
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Inductive Switching (125°C)
VCC = 400V
54
VGE = 15V
IC = 65A
td(off)
tf
128
91
Current Fall Time
R
G = 5Ω
4
Eon1
Eon2
Eoff
605
1925
1470
Turn-on Switching Energy
TJ = +125°C
5
Turn-on Switching Energy (Diode)
µJ
6
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
UNIT
RΘJC
RΘJC
WT
.15
N/A
6.10
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
°C/W
gm
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6
7
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JEDS24-1. (See Figures 21, 23.)
Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT65GP60B2
100
100
90
V
= 10V.
V
= 15V.
GE
GE
250µs PULSE TEST
<0.5 % DUTY CYCLE
250µs PULSE TEST
<0.5 % DUTY CYCLE
90
80
70
60
50
40
30
20
80
70
60
50
40
30
20
10
0
T =25°C
C
T =-55°C
C
T =25°C
C
T =-55°C
C
T =125°C
C
T =125°C
C
10
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 1, Output Characteristics(V = 15V)
FIGURE 2, Output Characteristics (V = 10V)
GE
GE
250
16
14
12
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 65A
C
T
= 25°C
J
200
150
V
=120V
CE
V
=300V
CE
10
8
T
= -55°C
J
V
=480V
CE
100
50
0
6
T
= 25°C
J
4
2
T
= 125°C
J
0
0
1
2
3
4
5
6
7
8
9
10
0
50
100
GATE CHARGE (nC)
FIGURE 4, Gate Charge
150
200
250
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
3
2.5
2
4
3.5
3
T
= 25°C.
J
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
=130A
C
I
= 65A
C
I
=130A
C
2.5
2
I
= 32.5A
C
I
= 65A
C
1.5
1
I
= 32.5A
C
1.5
1
0.5
0
V
= 15V.
GE
0.5
0
250µs PULSE TEST
<0.5 % DUTY CYCLE
6
8
10
12
14
16
-50 -25
0
25
50
75
100 125
V
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
300
1.2
1.15
1.10
1.05
1.0
250
200
150
100
0.95
0.9
50
0
0.85
0.8
-50 -25
0
25
50
75
100 125
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
APT65GP60B2
TYPICAL PERFORMANCE CURVES
60
160
140
120
100
80
VGE =15V,TJ=125°C
50
V
= 10V
GE
40
30
20
10
VGE =10V,TJ=125°C
V
= 15V
GE
VGE =15V,TJ=25°C
60
VGE =10V,TJ=25°C
40
V
= 400V
T = 25°C or 125°C
= 5Ω
L = 100 µH
CE
V
= 400V
R = 5Ω
CE
J
R
20
G
G
L = 100 µH
0
I
0
I
10
30
50
70 90
110
130
10
CE
30
50
70
90
110
130
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
160
140
R
G =5Ω, L = 100µH, VCE = 400V
TJ = 25 or 125°C,VGE = 10V
140
120
100
80
TJ = 125°C, VGE = 10V or 15V
120
100
80
60
60
40
40
TJ = 25 or 125°C,VGE = 15V
TJ = 25°C, VGE = 10V or 15V
20
20
RG =5Ω, L = 100µH, VCE = 400V
0
I
0
I
10
30
50
70 90 110 130
10
CE
30
50
70
90
110
130
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
5000
4000
3000
2000
1000
0
V
=
400V
L = 100 µH
= 5 Ω
V
=
400V
L = 100 µH
= 5 Ω
CE
CE
R
R
TJ = 125°C, VGE = 10V or 15V
G
G
TJ =125°C, V =15V
GE
TJ =125°C,V =10V
GE
TJ = 25°C, V =15V
GE
500
0
TJ = 25°C, V =10V
GE
T
J = 25°C, VGE = 10V or 15V
10
I
30
50
70
90
110
130
10 30
, COLLECTOR TO EMITTER CURRENT (A)
CE
50 70 90 110
130
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
9000
6000
V
V
=
=
400V
+15V
V
V
=
400V
CE
GE
CE
GE
E
130A
on2
= +15V
E
130A
on2
8000
7000
6000
5000
4000
3000
2000
R
= 5 Ω
TJ = 125°C
G
5000
4000
3000
2000
E
130A
off
E
130A
off
E
65A
on2
E
65A
on2
E
65A
off
E
32.5A
1000
0
on2
E
65A
off
1000
0
E
32.5A
0
on2
E
32.5A
E
32.5A
off
off
0
10
20
30
40
50
-50 -25
25
50
75
100 125
T , JUNCTION TEMPERATURE (°C)
R , GATE RESISTANCE (OHMS)
G
J
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT65GP60B2
10,000
300
250
200
150
100
C
ies
5,000
1,000
500
C
oes
100
50
C
res
50
0
10
0
10
20
30
40
50
0
V
100 200 300 400 500 600 700
, COLLECTOR TO EMITTER VOLTAGE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.9
0.7
0.5
0.3
Note:
t
1
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
0.02
0
0.1
2
+ T
0.05
J
DM θJC
C
SINGLE PULSE
10-3
10-5
10-4
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
187
RC MODEL
100
0.0683086
0.0216664
0.2556989
50
Power
(Watts)
Junction
temp. ( ”C)
0.0822491
T
T
=
125°C
75°C
J
=
C
D = 50 %
Case temperature
V
= 400V
CE
R
= 5 Ω
G
10
10
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
30
50
70
90
110
130
I , COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector
Current
Fmax = min(fmax1,fmax 2
)
0.05
fmax1
=
=
td(on) + tr + td(off ) + tf
Pdiss − P
cond
fmax 2
Eon2 + Eoff
T − TC
J
P
=
diss
RθJC
APT65GP60B2
TYPICAL PERFORMANCE CURVES
APT30DF60
Gate Voltage
TJ = 125 C
td(on)
VCE
IC
VCC
Collector Current
t
r
90%
A
10%
5 %
5%
D.U.T.
Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
VTEST
Gate Voltage
*DRIVER SAME TYPE AS D.U.T.
T
TJ = 125 C
Collector Voltage
td(off)
A
tf
VCE
90%
IC
100uH
VCLAMP
B
0
10%
A
Collector Current
Switching Energy
D.U.T.
DRIVER*
Figure 24, E
ON1
Test Circuit
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX® (B2) Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Gate
1.01 (.040)
1.40 (.055)
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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