APT66F60B2 [MICROSEMI]

N-Channel FREDFET; N沟道FREDFET


型号：	APT66F60B2
厂家：	Microsemi
描述：	N-Channel FREDFET N沟道FREDFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总4页 (文件大小：127K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

APT66F60B2

APT66F60L

600V, 70A, 0.09Ω Max, t ≤ 310ns

N-Channel FREDFET

T-Max^TM

TO-264

Power MOS 8^™is a high speed, high voltage N-channel switch-mode power MOSFET.

A proprietary planar stripe design yields excellent reliability and manufacturability. Low

switching loss is achieved with low input capacitance and ultra low C_rss"Miller" capaci-

tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

help control slew rates during switching, resulting in low EMI and reliable paralleling,

even when switching at very high frequency. Reliability in ﬂyback, boost, forward, and

other circuits is enhanced by the high avalanche energy capability.

APT66F60B2

APT66F60L

Single die FREDFET

FEATURES

TYPICAL APPLICATIONS

• Fast switching with low EMI

• ZVS phase shifted and other full bridge

• Low t for high reliability

• Half bridge

• Ultra low C

for improved noise immunity

• PFC and other boost converter

• Buck converter

rss

• Low gate charge

• Single and two switch forward

• Flyback

• Avalanche energy rated

• RoHS compliant

Absolute Maximum Ratings

Symbol Parameter

Unit

Ratings

Continuous Drain Current @ T_C= 25°C

I_D

Continuous Drain Current @ T_C= 100°C

Pulsed Drain Current ¹

I_DM

V_GS

E_AS

I_AR

245

±±0

1845

±±

Gate-Source Voltage

Single Pulse Avalanche Energy ²

Avalanche Current, Repetitive or Non-Repetitive

Thermal and Mechanical Characteristics

Symbol Characteristic

Min

Typ

Max

11±5

0.11

Unit

P_D

Total Power Dissipation @ T_C= 25°C

R_θJC

Junction to Case Thermal Resistance

°C/W

°C

R_θCS

0.11

Case to Sink Thermal Resistance, Flat, Greased Surface

T_J,T_STG

-55

150

±00

Operating and Storage Junction Temperature Range

T_L

Soldering Temperature for 10 Seconds (1.6mm from case)

0.22

6.2

W_T

Package Weight

in·lbf

N·m

Torque

Mounting Torque ( TO-264 Package), 4-40 or M± screw

1.1

MicrosemiWebsite-http://www.microsemi.com

Static Characteristics

T = 25°C unless otherwise speciﬁed

APT66F60B2_L

Parameter

Test Conditions

Min

Typ

Max

Unit

Symbol

V_BR(DSS)

= 0V, I = 250µA

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefﬁcient

Drain-Source On Resistance ^±

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefﬁcient

600

ΔV_BR(DSS)/ΔT_J

Reference to 25°C, I = 250µA

V/°C

0.57

0.075

= 10V, I = ±±A

R_DS(on)

V_GS(th)

0.09

2.5

= V_DS, I = 2.5mA

ΔV_GS(th)/ΔT_J

mV/°C

-10

= 600V

= 0V

T = 25°C

250

1000

±100

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

µA

T = 125°C

= ±±0V

Dynamic Characteristics

T = 25°C unless otherwise speciﬁed

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

g_fs

= 50V, I = ±±A

Forward Transconductance

Input Capacitance

C_iss

C_rss

C_oss

1±190

1±5

= 0V, V = 25V

Reverse Transfer Capacitance

Output Capacitance

f = 1MHz

1210

C_o(cr)

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

645

±±5

= 0V, V = 0V to 400V

C_o(er)

Q_g

Q_gs

Q_gd

t_d(on)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

±±0

= 0 to 10V, I = ±±A,

= ±00V

140

Resistive Switching

V = 400V, I = ±±A

t_r

t_d(off)

t_f

= 2.2Ω ⁶, V

= 15V

225

Source-Drain Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Continuous Source Current

(Body Diode)

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I_S

Pulsed Source Current

(Body Diode) ¹

I_SM

V_SD

t_rr

246

= ±±A, T = 25°C, V

= 0V

Diode Forward Voltage

1.0

±10

570

T = 25°C

268

474

1.6

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

T = 125°C

= ±±A

T = 25°C

Q_rr

µC

= 100V

T = 125°C

4.2

di_SD/dt = 100A/µs

T = 25°C

11.4

16.9

I_rrm

T = 125°C

≤ ±±A, di/dt ≤1000A/µs, V = 400V,

dv/dt

V/ns

T = 125°C

Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

Starting at T_J= 25°C, L = ±.±9mH, R_G=25Ω, I_AS= ±±A.

Pulse test: Pulse Width < ±80µs, duty cycle < 2%.

C_o(cr)is deﬁned as a ﬁxed capacitance with the same stored charge as C_OSSwith V_DS= 67% of V_(BR)DSS.

C_o(er)is deﬁned as a ﬁxed capacitance with the same stored energy as C_OSSwith V_DS= 67% of V_(BR)DSS. To calculate C_o(er)for any value of

V_DSless than V_(BR)DSS,use this equation: C_o(er)= -1.28E-7/V_DS^2 + 5.±6E-8/V_DS+ 2.00E-10.

R_Gis external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemi reserves the right to change, without notice, the speciﬁcations and information contained herein.

APT66F60B2_L

120

100

250

200

150

100

= 10V

= 125°C

T_J= -55°C

V_GS= 7&8V

T_J= 25°C

5.5V

T_J= 150°C

T_J= 125°C

4.5V

±0

, DRAIN-TO-SOURCE VOLTAGE (V)

DS(ON)

Figure 1, Output Characteristics

Figure 2, Output Characteristics

±.0

2.5

2.0

1.5

1.0

250

200

150

100

NORMALIZED TO

= 10V ±±A

V_DS> I_D(ON)

x R_DS(ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

T_J= -55°C

T_J= 25°C

T_J= 125°C

0.5

-55 -25

25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

, GATE-TO-SOURCE VOLTAGE (V)

Figure 3, R

vs Junction Temperature

Figure 4, Transfer Characteristics

DS(ON)

120

100

20,000

10,000

C_iss

T_J= -55°C

T_J= 25°C

1000

T_J= 125°C

C_oss

100

C_rss

10 20 ±0 40 50 60 70 80

100

V , DRAIN-TO-SOURCE VOLTAGE (V)

200

±00

400

500

600

I , DRAIN CURRENT (A)

Figure 5, Gain vs Drain Current

Figure 6, Capacitance vs Drain-to-Source Voltage

250

= ±±A

200

150

100

V_DS= 120V

V_DS= ±00V

T_J= 25°C

V_DS= 480V

T_J= 150°C

100

200

±00

400

500

0.±

, SOURCE-TO-DRAIN VOLTAGE (V)

0.6

0.9

1.2

1.5

Q , TOTAL GATE CHARGE (nC)

Figure 7, Gate Charge vs Gate-to-Source Voltage

Figure 8, Reverse Drain Current vs Source-to-Drain Voltage

APT66F60B2_L

±00

100

±00

100

1±µs

100µs

1±µs

100µs

ds(on)

1ms

10ms

ds(on)

1ms

10ms

T = 150°C

_C= 25°C

100ms

Scaling for Different Case & Junction

Temperatures:

100ms

DC line

T = 125°C

DC line

_D= I_{D(T = 25°C)}*(T - T_C)/125

_C= 75°C

0.1

100

800

, DRAIN-TO-SOURCE VOLTAGE (V)

100

800

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 9, Forward Safe Operating Area

Figure 10, Maximum Forward Safe Operating Area

0.12

0.10

0.08

0.06

0.04

D = 0.9

0.7

0.5

Note:

0.±

= Pulse Duration

SINGLE PULSE

Duty Factor D =

0.02

0.1

Peak T = P

x Z

+ T

θJC C

0.05

10^-5

10^-4

10^-±

10^-2

10^-1

1.0

RECTANGULAR PULSE DURATION (seconds)

Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration

TO-264 (L) Package Outline

T-MAX™ (B2) Package Outline

e± 100% Sn Plated

4.69 (.185)

5.±1 (.209)

4.60 (.181)

15.49 (.610)

16.26 (.640)

5.21 (.205)

19.51 (.768)

20.50 (.807)

1.49 (.059)

2.49 (.098)

1.80 (.071)

2.01 (.079)

±.10 (.122)

±.48 (.1±7)

5.±8 (.212)

6.20 (.244)

5.79 (.228)

6.20 (.244)

20.80 (.819)

21.46 (.845)

25.48 (1.00±)

26.49 (1.04±)

2.87 (.11±)

±.12 (.12±)

4.50 (.177) Max.

2.29 (.090)

2.69 (.106)

2.29 (.090)

2.69 (.106)

1.65 (.065)

2.1± (.084)

0.40 (.016)

0.79 (.0±1)

19.81 (.780)

20.±2 (.800)

19.81 (.780)

21.±9 (.842)

Gate

Drain

Source

Gate

Drain

Source

1.01 (.040)

1.40 (.055)

0.48 (.019)

0.84 (.0±±)

2.59 (.102)

±.00 (.118)

0.76 (.0±0)

1.±0 (.051)

2.21 (.087)

2.59 (.102)

2.79 (.110)

5.45 (.215) BSC

2-Plcs.

±.18 (.125)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

These dimensions are equal to the TO-247 without the mounting hole.

Dimensions in Millimeters and (Inches)

Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,90± 5,089,4±4 5,182,2±4 5,019,522 5,262,±±6 6,50±,786

APT66F60B2 [MICROSEMI]

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