APT8014L2FLL [MICROSEMI]
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。
| 型号： | APT8014L2FLL |
| 厂家： | 
Microsemi |
| 描述： | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| 文件： | 总5页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
800V 52A 0.16Ω
APT8014L2FLL APT8014L2FLLG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
R
POWER MOS 7 FREDFET
TO-264
Max
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Increased Power Dissipation
• Easier To Drive
D
S
G
• Lower Gate Charge, Qg
• Popular TO-264 MAX Package
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT8014L2FLL(G)
UNIT
VDSS
ID
Drain-Source Voltage
800
52
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
208
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
893
PD
7.14
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
52
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3200
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
2
Drain-Source On-State Resistance
(VGS = 10V, 26A)
0.160
250
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
IDSS
µA
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
APT8014L2FLL(G)
Symbol
Ciss
Coss
Crss
Qg
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
V
= 0V
Input Capacitance
7238
1402
248
285
30
GS
V
= 25V
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
GS
V
= 400V
Qgs
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 52A @ 25°C
D
Qgd
170
20
RESISTIVESWITCHING
td(on)
tr
V
= 15V
GS
19
V
= 400V
DD
td(off)
69
Turn-off Delay Time
Fall Time
I
= 52A @ 25°C
D
tf
R
= 0.6Ω
15
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
1091
1135
1662
1383
Turn-on Switching Energy
V
= 533V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 52A, R = 3Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
V
= 533V V = 15V
GS
DD
Turn-off Switching Energy
I
= 52A, R = 3Ω
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
52
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
208
1.3
2
Volts
V/ns
(VGS = 0V, IS = -52A)
dv
/
dv
5
Peak Diode Recovery
/
18
dt
dt
Reverse Recovery Time
(IS = -52A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
440
1100
trr
ns
µC
Reverse Recovery Charge
(IS = -52A, di/dt = 100A/µs)
2.0
13
15
30
Qrr
Peak Recovery Current
(IS = -52A, di/dt = 100A/µs)
IRRM
Amps
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.14
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 2.37mH, R = 25Ω, Peak I = 52A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 52A
/
≤ 700A/µs
V
R ≤ 800V T ≤ 150°C
dt
S
D
J
6
Eon includes diode reverse recovery. See figures 18, 20.
Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.16
0.14
0.9
0.12
0.7
0.10
0.08
0.5
Note:
t
0.06
1
0.3
t
2
0.04
t
1
Duty Factor D =
/
t
2
Peak T = P
x Z + T
0.02
0
0.1
J
DM
θJC C
0.05
SINGLEPULSE
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT8014L2FLL(G)
140
120
100
80
8V
7V
V
GS
=15 & 10V
6.5V
TJ ( C)
TC ( C)
6V
60
0.0509
0.0894
Dissipated Power
(Watts)
5.5V
5V
0.0522
0.988
40
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
20
0
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
140
1.40
V
> I (ON) x
250µSEC. PULSE TEST
R
(ON)MAX.
NORMALIZED TO
DS
D
DS
V
= 10V
@
26A
GS
@
<0.5 % DUTY CYCLE
120
100
80
60
40
20
0
1.30
1.20
1.10
1.00
V
=10V
T
= -55°C
GS
J
T
J
= +25°C
V
=20V
80
GS
0.90
0.80
T
= +125°C
J
0
1
2
3
4
5
6
7
8
0
20
40
60
100
120
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
1.10
1.05
1.00
60
50
40
30
20
0.95
0.90
10
0
25
50
75
100
125
150
-50 -25
0
25
50
75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
1.2
2.5
I
= 26A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT8014L2FLL(G)
208
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
100
50
C
iss
100µS
C
oss
1,000
10
5
1mS
10mS
T
=+25°C
C
C
rss
T =+150°C
J
SINGLEPULSE
10
1
100
1
100
800
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
16
I
= 52A
D
100
12
V
=160V
DS
T =+150°C
J
T =+25°C
J
V
=400V
DS
V
=640V
8
DS
10
4
0
1
0
50 100 150 200 250 300 350 400
Q ,TOTALGATECHARGE(nC)
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
160
140
V
= 533V
DD
= 3Ω
t
d(off)
R
T
140
120
G
120
100
80
60
40
20
0
= 125°C
J
L = 100µH
t
f
V
= 533V
DD
= 3Ω
100
80
60
40
20
0
R
T
G
= 125°C
J
L = 100µH
t
r
t
d(on)
10
20
30
40
I
50
(A)
60
70
80
10
20
30
40
I
50
(A)
60
70
80
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
12000
10000
8000
6000
4000
3000
2500
2000
1500
1000
V
= 533V
V
I
= 533V
DD
DD
= 52A
R
= 3Ω
G
D
E
off
T
= 125°C
T
= 125°C
J
J
L = 100µH
L = 100µH
EON includes
EON includes
diode reverse recovery.
diode reverse recovery.
E
on
E
on
E
off
500
0
2000
0
10
20
30
40
50
(A)
60
70
80
0
5
10 15 20 25 30 35 40 45 50
I
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8014L2FLL(G)
10 %
90%
Gate Voltage
T
= 125 C
T
= 125 C
J
J
t
d(off)
t
d(on)
Drain Voltage
Drain Current
90%
90%
t
t
f
r
5 %
10%
0
5 %
10 %
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT30DF60
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264MAXTM(L2)PackageOutline
e1
SAC: Tin, Silver, Copper
4.60 (.181)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.80 (.071)
2.01 (.079)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,5225,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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