APT801R2BN-GULLWING [MICROSEMI]
Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN;型号: | APT801R2BN-GULLWING |
厂家: | Microsemi |
描述: | Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN |
文件: | 总4页 (文件大小:157K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
APT801R2BNR-BUTT
Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
ADPOW
APT801R2BNR-GULLWING
Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
ADPOW
APT801R4BN-GULLWING
Power Field-Effect Transistor, 8.5A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
MICROSEMI
APT801R4BNR-BUTT
Power Field-Effect Transistor, 8.5A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
ADPOW
APT801R4BNR-GULLWING
Power Field-Effect Transistor, 8.5A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
ADPOW
©2020 ICPDF网 联系我们和版权申明