APT801R2BN-GULLWING [MICROSEMI]

Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN;
APT801R2BN-GULLWING
型号: APT801R2BN-GULLWING
厂家: Microsemi    Microsemi
描述:

Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

文件: 总4页 (文件大小:157K)
中文:  中文翻译
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