APT801R4BNR-GULLWING [ADPOW]

Power Field-Effect Transistor, 8.5A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN;
APT801R4BNR-GULLWING
型号: APT801R4BNR-GULLWING
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Power Field-Effect Transistor, 8.5A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

文件: 总2页 (文件大小:79K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

APT801R4CN

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 6.5A I(D) | TO-254ISO
ETC

APT8020B2FLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW

APT8020B2FLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
MICROSEMI

APT8020B2FLLE3

Power Field-Effect Transistor, 38A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-MAX, 3 PIN
MICROSEMI

APT8020B2FLLG

Power Field-Effect Transistor, 38A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, B2, T-MAX-3
MICROSEMI

APT8020B2LL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW

APT8020B2LL_04

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW

APT8020JFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW

APT8020JFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
MICROSEMI

APT8020JLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW

APT8020JLL_04

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW

APT8020LFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW