APT83GU30SG [MICROSEMI]
Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, D2PAK-3;
| 型号： | APT83GU30SG |
| 厂家： | 
Microsemi |
| 描述： | Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, D2PAK-3 栅 瞄准线 功率控制 晶体管 |
| 文件： | 总6页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT83GU30B
APT83GU30S
300V
®
POWER MOS 7 IGBT
TO-247
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
D3PAK
C
E
G
G
C
E
• Low Conduction Loss
• Low Gate Charge
• SSOA rated
C
E
G
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
UNIT
Symbol
VCES
VGE
APT83GU30B_S
Collector-Emitter Voltage
Gate-Emitter Voltage
300
±20
±30
Volts
VGEM
IC1
Gate-Emitter Voltage Transient
Continuous Collector Current @
7
100
83
TC = 25°C
Amps
IC2
Continuous Collector Current @ TC = 100°C
1
ICM
295
Pulsed Collector Current
@ TC = 150°C
SSOA
PD
Switching Safe Operating Area @ TJ = 150°C
295A @ 300V
543
Watts
°C
Total Power Dissipation
TJ,TSTG
TL
-55 to 150
300
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)
300
3
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 25°C)
4.5
1.5
1.5
6
Volts
2.0
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 125°C)
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
250
2500
±100
ICES
µA
nA
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
IGES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT83GU30B_S
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
TYP
4385
406
31
MAX
UNIT
Input Capacitance
Cies
Coes
Cres
VGEP
Qg
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Output Capacitance
pF
V
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
7.0
144
29
Gate Charge
3
VGE = 15V
Total Gate Charge
VCE = 150V
Qge
nC
Gate-Emitter Charge
IC = 45A
Qgc
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
44
SSOA
TJ = 150°C, RG = 5Ω, VGE
=
295
A
15V, L = 100µH,VCE = 300V
td(on)
tr
td(off)
tf
69
29
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Inductive Switching (25°C)
VCC = 200V
ns
VGE = 15V
IC = 45A
308
122
TBD
189
354
69
RG = 20Ω
TJ = +25°C
4
Eon1
Eon2
Eoff
td(on)
tr
Turn-on Switching Energy
Turn-on Switching Energy (Diode) 5
µJ
ns
6
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Inductive Switching (125°C)
VCC = 200V
29
VGE = 15V
td(off)
tf
355
226
TBD
287
503
IC = 45A
RG = 20Ω
TJ = +125°C
Current Fall Time
4
Turn-on Switching Energy
Eon1
Eon2
Eoff
5
Turn-on Switching Energy (Diode)
µJ
6
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.23
N/A
UNIT
°C/W
gm
RΘJC
RΘJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
5.90
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6
7
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Countinous current limited by package lead temperature.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
TYPICALPERFORMANCECURVES
APT83GU30B_S
60
60
50
40
30
20
V
= 10V.
V
= 15V.
GE
GE
250µs PULSE TEST
<0.5 % DUTY CYCLE
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
40
30
20
T =-55°C
C
T =25°C
C
T =25°C
C
10
0
10
0
T =125°C
C
T =-55°C
C
T =125°C
C
0
0.5
1
1.5
2
0
0.5
1
1.5
2
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 1, Output Characteristics(V = 15V)
FIGURE 2, Output Characteristics (V = 10V)
GE
GE
300
16
14
12
10
8
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 45A
C
T
= 25°C
J
250
200
150
100
V
= 60V
CE
V
= 150V
CE
V
= 240V
CE
6
T
J
= -55°C
4
T
= 25°C
J
50
0
2
0
T
= 125°C
J
0
1
2
3
4
5
6
7
8
9
10
0
20
40 60
GATE CHARGE (nC)
FIGURE 4, Gate Charge
80 100 120 140 160
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
4
3.5
3
2
1.5
1.0
0.5
0
T
= 25°C.
J
I
C = 90A
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C = 45A
2.5
2
I
C = 22.5A
I
90A
C=
I
45A
C=
1.5
1
I
22.5A
C=
V
= 15V.
0.5
0
GE
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
6
7
8
9
10 11 12 13 14 15 16
-50 -25
0
25
50
75
100 125
V
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
1.2
200
180
160
140
120
100
1.15
1.10
1.05
1.0
80
0.95
0.9
LeadTemperature
60
40
20
0
Limited
0.85
0.8
-50 -25
0
25
50
75
100 125
-50 -25
0
25
50
75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
APT83GU30B_S
80
70
60
50
40
30
20
10
400
350
300
250
200
150
100
50
V
= 15V
GE
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
V
= 200V
CE
V
= 200V
T = 25°C, T =125°C
CE
J
J
R =20Ω
R
=20Ω
G
G
L = 100 µH
L = 100 µH
0
I
0
I
10 20 30 40 50 60 70 80 90 100
, COLLECTOR TO EMITTER CURRENT (A)
10 20 30 40 50 60 70 80 90 100
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
250
80
RG = 20Ω, L = 100µH, VCE = 200V
70
60
50
40
30
20
10
200
T
J = 125°C, VGE = 10V or 15V
150
100
50
TJ = 25°C, VGE = 10V or 15V
TJ = 25 or 125°C,VGE = 15V
RG = 20Ω, L = 100µH, VCE = 200V
0
I
0
I
10 20 30 40 50 60 70 80 90 100
, COLLECTOR TO EMITTER CURRENT (A)
10 20 30 40 50 60 70 80 90 100
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
1600
1000
800
600
400
V
= 200V
CE
L = 100 µH
= 20Ω
1400
1200
1000
800
R
G
T
J = 125°C, VGE = 10V or 15V
TJ=125°C,V =15V
GE
V
= 200V
CE
L = 100 µH
= 20Ω
R
G
600
400
200
0
200
0
TJ= 25°C, V =15V
GE
TJ = 25°C, VGE = 10V or 15V
10 20 30 40 50 60 70 80 90 100
, COLLECTOR TO EMITTER CURRENT (A)
10 20 30 40 50 60 70 80 90 100
I
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
2000
2000
V
V
R
= 200V
V
V
=
200V
CE
GE
CE
GE
=
+15V
= +15V
= 20Ω
TJ = 125°C
G
E
90A
off
1500
1000
500
0
1500
1000
500
0
E
90A
off
E
90A
on2
E
90A
on2
E
45A
off
E
45A
E
off
E
45A
on2
E
45A
25
on2
E
22.5A
22.5A
off
off
E
22.5A
E
22.5A
on2
on2
50
5
10 15 20 25 30 35 40 45 50
0
75
100
125
R , GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
APT83GU30B_S
TYPICALPERFORMANCECURVES
10,000
350
300
250
200
150
100
50
C
ies
1,000
500
C
oes
100
50
C
res
10
0
0
10
20
30
40
50
0
50
100 150 200 250 300 350
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
, COLLECTOR TO EMITTER VOLTAGE
CE
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0.25
0.9
0.20
0.7
0.15
0.5
Note:
0.10
0.3
t
1
t
2
0.05
t
1
0.1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
0.05
J
DM θJC
C
SINGLEPULSE
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
Figure19A,MaximumEffectiveTransientThermalImpedance,Junction-To-CasevsPulseDuration
250
RC MODEL
Junction
temp. ( C)
0.0106
0.0868
0.133
0.00663F
0.0106F
0.262F
100
50
Fmax = min(fmax1,fmax 2
)
Power
(watts)
0.05
fmax1
=
=
td(on) + tr + td(off ) + tf
P
− P
cond
diss
T
T
=
125°C
75°C
J
fmax 2
=
Eon2 + Eoff
C
D = 50 %
Case temperature
V
= 200V
T − TC
CE
= 5 Ω
J
P
=
R
diss
G
RθJC
10
10
30
50
70
90
110
130
FIGURE19B, TRANSIENT THERMALIMPEDANCE MODEL
I , COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector Current
APT83GU30B_S
APT15DS30
Gate Voltage
10%
d(on)
TJ = 125
C
t
Collector Current
t
r
VCE
IC
VCC
90%
5%
5 %
10%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
*DRIVER SAME TYPE AS D.U.T.
90%
Gate Voltage
T
= 125 C
J
td(off)
tf
A
Collector Current
VCE
90%
IC
VCLAMP
100uH
A
B
10%
Collector Voltage
Switching Energy
0
D.U.T.
DRIVER*
Figure 24, E
Test Circuit
Figure 23, Turn-off Switching Waveforms and Definitions
ON1
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
1.49 (.059)
2.49 (.098)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
1.04 (.041)
1.15 (.045)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
1.27 (.050)
1.40 (.055)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
0.020 (.001)
0.178 (.007)
3.81 (.150)
1.98 (.078)
2.08 (.082)
4.06 (.160)
1.65 (.065)
2.13 (.084)
2.67 (.105)
2.84 (.112)
0.40 (.016)
0.79 (.031)
(Base of Lead)
19.81 (.780)
20.32 (.800)
Heat Sink (Collector)
and Leads are Plated
1.01 (.040)
1.40 (.055)
Gate
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
Collector
Emitter
Emitter
Collector
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
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