APT8DQ60KG [MICROSEMI]

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE; 超快软恢复整流二极管


型号：	APT8DQ60KG
厂家：	Microsemi
描述：	ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 超快软恢复整流二极管整流二极管局域网超快软恢复二极管快速软恢复二极管
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600V 8A

APT8DQ60K

APT8DQ60SA

APT8DQ60KG* APT8DQ60SAG*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

(K)

D²PAK

TO-220

PRODUCT APPLICATIONS

PRODUCT BENEFITS

PRODUCT FEATURES

• Low Losses

• Ultrafast Recovery Times

• Anti-Parallel Diode

-Switchmode Power Supply

-Inverters

• Free Wheeling Diode

-Motor Controllers

-Converters

(SA)

• Low Noise Switching

• Cooler Operation

• Soft Recovery Characteristics

• Popular TO-220 Package or

Surface Mount D²PAK Package

• Low Forward Voltage

• Higher Reliability Systems

-Inverters

• Snubber Diode

• Increased System Power

Density

• Low Leakage Current

• PFC

• Avalanche Energy Rated

1 - Cathode

2 - Anode

Back of Case -Cathode

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise speciﬁed.

APT8DQ60K_SA(G)

Symbol Characteristic / Test Conditions

UNIT

V_R

V_RRM

V_RWM

I_F(AV)

I_F(RMS)

I_FSM

Maximum D.C. Reverse Voltage

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

Volts

600

Maximum Average Forward Current (T_C= 128°C, Duty Cycle = 0.5)

RMS Forward Current (Square wave, 50% duty)

Amps

Non-Repetitive Forward Surge Current (T_J= 45°C, 8.3ms)

110

E_AVL

°C

Avalanche Energy (1A, 40mH)

T_J,T_STG

T_L

-55 to 175

300

Operating and StorageTemperature Range

Lead Temperature for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

UNIT

MIN

TYP

MAX

I_F= 8A

2.0

2.5

1.5

2.4

I_F= 16A

V_F

Forward Voltage

Volts

I_F= 8A, T_J= 125°C

V_R= 600V

I_RM

C_T

µA

Maximum Reverse Leakage Current

Junction Capacitance, V_R= 200V

V_R= 600V, T_J= 125°C

500

Microsemi Website - http://www.microsemi.com

DYNAMIC CHARACTERISTICS

APT8DQ60K_SA(G)

Characteristic

Symbol

MIN

TYP

MAX

UNIT

Test Conditions

t_rr

I_F= 1A, di_F/dt = -100A/µs, V_R= 30V, T_J= 25°C

Reverse Recovery Time

Reverse Recovery Charge

t_rr

I_F= 8A, di_F/dt = -200A/µs

V_R= 400V, T_C= 25°C

Q_rr

Amps

I_RRM

Maximum Reverse Recovery Current

Reverse Recovery Time

t_rr

160

I_F= 8A, di_F/dt = -200A/µs

V_R= 400V, T_C= 125°C

Q_rr

Reverse Recovery Charge

I_RRM

t_rr

Maximum Reverse Recovery Current

Amps

250

Reverse Recovery Time

I_F= 8A, di_F/dt = -1000A/µs

V_R= 400V, T_C= 125°C

Q_rr

Reverse Recovery Charge

I_RRM

Amps

Maximum Reverse Recovery Current

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

R_θJC

W_T

2.7

Junction-to-Case Thermal Resistance

°C/W

0.07

1.9

Package Weight

lb•in

N•m

Torque

Maximum Mounting Torque

1.1

Microsemi reserves the right to change, without notice, the speciﬁcations and information contained herein.

3.0

2.5

2.0

1.5

1.0

0.5

D = 0.9

0.7

0.5

0.3

0.1

Note:

Duty Factor D =

SINGLE PULSE

10^-3

Peak T = P

x Z

+ T

θJC C

0.05

10^-5

10^-4

10^-2

10^-1

1.0

RECTANGULAR PULSE DURATION (seconds)

FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

T_J(°C)

T_C(°C)

1.93

0.773

Dissipated Power

(Watts)

0.00078

0.0246

Z_EXTare the external thermal

impedances: Case to sink,

sink to ambient, etc. Set to

zero when modeling only

the case to junction.

FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL

TYPICAL PERFORMANCE CURVES

APT8DQ60K_SA(G)

120

100

= 125°C

= 400V

16A

= 175°C

= 125°C

= 25°C

= -55°C

0.5 1.0

1.5 2.0

2.5 3.0 3.5

200

400

600

800 1000 1200

V , ANODE-TO-CATHODE VOLTAGE (V)

-di /dt, CURRENT RATE OF CHANGE(A/µs)

Figure 2. Forward Current vs. Forward Voltage

Figure 3. Reverse Recovery Time vs. Current Rate of Change

400

350

300

250

200

150

100

= 125°C

= 400V

= 125°C

V = 400V

16A

200

400

600

800 1000 1200

200

400

600

800 1000 1200

-di /dt, CURRENT RATE OF CHANGE (A/µs)

Figure 4. Reverse Recovery Charge vs. Current Rate of Change

Figure 5. Reverse Recovery Current vs. Current Rate of Change

1.2

Duty cycle = 0.5

= 175°C

1.0

RRM

0.8

0.6

0.4

0.2

0.0

100

125

150

Case Temperature (°C)

Figure 7. Maximum Average Forward Current vs. CaseTemperature

100

125

150

175

T , JUNCTION TEMPERATURE (°C)

Figure 6. Dynamic Parameters vs. Junction Temperature

100 200

V , REVERSE VOLTAGE (V)

Figure 8. Junction Capacitance vs. Reverse Voltage

APT8DQ60K_SA(G)

di_F/dt Adjust

+18V

APT6038BLL

D.U.T.

30µH

rr rr

Waveform

PEARSON 2878

CURRENT

TRANSFORMER

Figure 9. Diode Test Circuit

I_F- Forward Conduction Current

di_F/dt - Rate of Diode Current Change Through Zero Crossing.

I_RRM- Maximum Reverse Recovery Current.

Zero

0.25 I

RRM

- Reverse Recovery Time, measured from zero crossing where diode

current goes from positive to negative, to the point at which the straight

line through I_RRMand 0.25 I_RRMpasses through zero.

- Area Under the Curve Defined by I_RRMand t .

Figure 10, Diode Reverse Recovery Waveform and Definitions

TO-220 (K) Package Outline

TO-263 D²(SA) Package Outline

100% Sn

10.66 (.420)

9.66 (.380)

4.45 (.175)

4.57 (.180)

1.27 (.050)

1.32 (.052)

10.06 (.396)

10.31(.406)

7.54 (.297)

7.68 (.303)

1.40 (.055)

1.65 (.065)

1.39 (.055)

0.51 (.020)

5.33 (.210)

4.83 (.190)

Cathode

6.85 (.270)

5.85 (.230)

6.02 (.237)

6.17 (.243)

8.51 (.335)

8.76(.345)

4.08 (.161) Dia.

3.54 (.139)

3.42 (.135)

2.54 (.100)

0.050 (.002)

12.192 (.480)

9.912 (.390)

0.330 (.013)

0.432 (.017)

0.080 (2.032)

MAX.

3.683 (.145)

MAX.

0.000 (.000)

0.254 (.010)

2.62 (.103)

2.72 (.107)

0.762 (.030)

0.864 (.034)

{2 Plcs.}

3.68 (.145)

6.27 (.247)

(Base of Lead)

14.73 (.580)

12.70 (.500)

1.22 (.048)

1.32 (.052)

{3 Plcs.}

Heat Sink (Cathode)

and Leads are Plated

Cathode

Anode

0.50 (.020)

0.41 (.016)

2.54 (.100) BSC

{2 Plcs.}

2.92 (.115)

2.04 (.080)

1.01 (.040) 2-Plcs.

.83 (.033)

1.77 (.070) 2-Plcs.

1.15 (.045)

Anode

Cathode

5.33 (.210)

4.83 (.190)

4.82 (.190)

3.56 (.140)

Dimensions in Millimeters and (Inches)

Dimensions in Millimeters (Inches)

Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786

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