APTC80DA15T1G [MICROSEMI]
Boost chopper Super Junction MOSFET Power Module; 升压斩波超级结MOSFET功率模块
| 型号： | APTC80DA15T1G |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper Super Junction MOSFET Power Module |
| 文件： | 总6页 (文件大小：314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTC80DA15T1G
VDSS = 800V
Boost chopper
Super Junction MOSFET
Power Module
R
DSon = 150mΩ max @ Tj = 25°C
ID = 28A @ Tc = 25°C
5
6
11
Application
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
CR1
Q2
Features
•
3
4
NTC
-
-
-
-
-
Ultra low RDSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
9
10
•
•
•
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
1
2
12
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
•
•
Low profile
RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
800
28
V
Tc = 25°C
ID
Continuous Drain Current
A
Tc = 80°C
21
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
110
±30
150
V
mΩ
W
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
277
17
0.5
670
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 6
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APTC80DA15T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 800V
Tj = 25°C
Tj = 125°C
50
µA
375
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
VGS = 10V, ID = 14A
VGS = VDS, ID = 2mA
VGS = ±20 V, VDS = 0V
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
150
mΩ
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
±150 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
4507
V
GS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
2092
108
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
180
22
VGS = 10V
V
Bus = 400V
nC
ID = 28A
90
Inductive switching @125°C
Td(on)
Tr
Turn-on Delay Time
Rise Time
10
13
83
35
V
GS = 15V
VBus = 533V
ID = 28A
RG = 2.5Ω
ns
Td(off) Turn-off Delay Time
Tf
Fall Time
Inductive switching @ 25°C
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
486
278
850
342
µJ
µJ
V
GS = 15V, VBus = 533V
ID = 28A, RG = 2.5Ω
Inductive switching @ 125°C
V
GS = 15V, VBus = 533V
ID = 28A, RG = 2.5Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
1200
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
100
500
IRM
VR=1200V
µA
IF
30
2.6
3.2
1.8
A
IF = 30A
IF = 60A
IF = 30A
3.1
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300
380
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 30A
VR = 800V
di/dt =200A/µs
360
1700
Qrr
nC
2 – 6
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APTC80DA15T1G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.45
1.2
RthJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
2.5
150
125
100
4.7
80
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To heatsink
M4
N.m
g
Wt
Package Weight
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
50
kΩ
K
B 25/85 T25 = 298.15 K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/ 85
exp B
−
T25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
3 – 6
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APTC80DA15T1G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.4
0.3
0.2
0.1
0
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15&10V
6.5V
6V
5.5V
TJ=125°C
5V
4.5V
4V
TJ=25°C
TJ=125°C
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
V
DS, Drain to Source Voltage (V)
V
GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
30
25
20
15
10
5
Normalized to
GS=10V @ 14A
V
VGS=10V
VGS=20V
0.9
0.8
0
25
50
75
100
125
150
0
10
20
30
40
50
60
TC, Case Temperature (°C)
ID, Drain Current (A)
4 – 6
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APTC80DA15T1G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
3.0
1.15
1.10
1.05
1.00
0.95
0.90
VGS=10V
ID= 14A
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
25
50
75
100
125
150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
100
10
1
1.1
1.0
0.9
0.8
0.7
limited by
RDSon
100µs
1ms
100ms
Single pulse
TJ=150°C
TC=25°C
0
25
50
75
100
125
150
1
10
100
1000
V
DS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
Capacitance vs Drain to Source Voltage
100000
16
14
12
10
8
ID=28A
TJ=25°C
VDS=160V
10000
1000
100
Ciss
VDS=400V
Coss
Crss
VDS=640V
6
4
2
0
10
0
40
80
120
160
200
0
10
20
30
40
50
V
DS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
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APTC80DA15T1G
Delay Times vs Current
Rise and Fall times vs Current
50
40
30
20
10
0
100
80
60
40
20
0
td(off)
tf
VDS=533V
RG=2.5Ω
TJ=125°C
L=100µH
VDS=533V
RG=2.5Ω
TJ=125°C
L=100µH
tr
td(on)
10
20
30
40
50
10
20
30
40
50
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
1500
1200
900
600
300
0
2500
2000
1500
1000
500
VDS=533V
VDS=533V
ID=28A
TJ=125°C
L=100µH
RG=2.5Ω
TJ=125°C
L=100µH
Eon
Eon
Eon
Eoff
Eoff
0
0
5
10
15
20
25
10
20
30
40
50
ID, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
Operating Frequency vs Drain Current
400
350
300
250
200
150
100
50
VDS=533V
D=50%
ZVS
RG=2.5Ω
TJ=125°C
TC=75°C
100
10
1
TJ=150°C
ZCS
Hard
switching
TJ=25°C
0
6
8
10 12 14 16 18 20 22 24 26
0.2
0.6
1
1.4
1.8
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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