APTCV60TLM99T3G [MICROSEMI]
Three level inverter CoolMOS & Trench + Field Stop IGBT Power; 三电平逆变器的CoolMOS和沟道+场站IGBT电源
| 型号： | APTCV60TLM99T3G |
| 厂家： | 
Microsemi |
| 描述： | Three level inverter CoolMOS & Trench + Field Stop IGBT Power |
| 文件： | 总9页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTCV60TLM99T3G
Trench & Field Stop IGBT Q2, Q3:
VCES = 600V ; IC = 30A @ Tc = 80°C
Three level inverter
CoolMOS & Trench + Field Stop IGBT
Power Module
CoolMOS™ Q1, Q4:
VDSS = 600V ; ID = 17A @ Tc = 80°C
Application
Solar converter
•
•
Uninterruptible Power Supplies
Features
•
Q2, Q3 Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
•
Q1, Q4 CoolMOS™
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
•
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
•
•
•
28 27 26 25
23 22
20 19 18
29
30
16
15
Internal thermistor for temperature monitoring
Benefits
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
31
32
14
13
2
3
4
7
8
10 11
12
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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APTCV60TLM99T3G
Q1 & Q4 Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
22
17
V
Tc = 25°C
Tc = 80°C
ID
Continuous Drain Current
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
75
±20
99
V
mΩ
W
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
110
11
1.2
800
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
A
mJ
Q1 & Q4 Electrical Characteristics
Symbol Characteristic
Test Conditions
GS = 0V
VDS = 600V
Min Typ Max Unit
Tj = 25°C
50
V
IDSS
Zero Gate Voltage Drain Current
µA
Tj = 125°C
100
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
VGS = 10V, ID = 18A
VGS = VDS, ID = 1.2 mA
VGS = ±20 V, VDS = 0V
99
3.5
100
mΩ
V
nA
2.5
3
IGSS
Gate – Source Leakage Current
Q1 & Q4 Dynamic Characteristics
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGS = 0V ; VDS = 100V
f = 1MHz
Min Typ Max Unit
Ciss
Coss
Input Capacitance
Output Capacitance
2800
pF
130
14
Qg
Total gate Charge
V
GS = 10V
VBus = 400V
ID = 18A
nC
Qgs
Qgd
Td(on)
Tr
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
20
60
10
5
V
GS = 10V
VBus = 400V
ID = 18A
RG = 3.3Ω
ns
Td(off) Turn-off Delay Time
60
5
Tf
Fall Time
°C/W
RthJC
Junction to Case Thermal Resistance
1.15
Q2 & Q3 Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
VCES
Collector - Emitter Breakdown Voltage
600
TC = 25°C
TC = 80°C
TC = 25°C
50
30
60
±20
90
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
TJ = 150°C
RBSOA Reverse Bias Safe Operating Area
60A @ 550V
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APTCV60TLM99T3G
Q2 & Q3 Electrical Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V, VCE = 600V
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
250
1.9
µA
V
Tj = 25°C
1.5
1.7
5.8
V
GE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IC = 30A
Tj = 150°C
VGE = VCE , IC = 400µA
VGE = 20V, VCE = 0V
5.0
6.5
V
IGES
Gate – Emitter Leakage Current
300
nA
Q2 & Q3 Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
1600
VGE = 0V
VCE = 25V
f = 1MHz
pF
Output Capacitance
110
50
Reverse Transfer Capacitance
VGE=±15V, IC=30A
VCE=300V
QG
Gate charge
0.3
µC
Inductive Switching (25°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
110
45
V
GE = ±15V
ns
ns
VBus = 300V
IC = 30A
RG = 10Ω
Inductive Switching (150°C)
VGE = ±15V
Td(off) Turn-off Delay Time
200
40
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
120
50
V
Bus = 300V
Td(off) Turn-off Delay Time
Tf
250
60
IC = 30A
RG = 10Ω
Fall Time
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
0.16
0.3
0.7
VGE = ±15V
VBus = 300V
IC = 30A
Eon
Turn-on Switching Energy
mJ
mJ
Eoff
Turn-off Switching Energy
RG = 10Ω
1.05
V
GE ≤15V ; VBus = 360V
Isc
Short Circuit data
150
A
tp ≤ 6µs ; Tj = 150°C
°C/W
RthJC
Junction to Case Thermal Resistance
1.6
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APTCV60TLM99T3G
CR5 & CR6 diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
VRRM
IRM
IF
600
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 80°C
25
500
Maximum Reverse Leakage Current
DC Forward Current
VR=600V
30
1.8
2.2
1.5
IF = 30A
IF = 60A
IF = 30A
2.2
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
25
160
35
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 30A
VR = 400V
di/dt =200A/µs
Qrr
nC
mJ
480
IF = 30A
VR = 400V
di/dt =1000A/µs
Err
Reverse Recovery Energy
Tj = 125°C
0.6
RthJC
Junction to Case Thermal Resistance
1.2 °C/W
CR2, CR3, CR7 & CR8 diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
VRRM
IRM
IF
1200
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 80°C
100
500
Maximum Reverse Leakage Current
DC Forward Current
VR=1200V
30
2.6
3.2
1.8
IF = 30A
IF = 60A
IF = 30A
3.1
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300
380
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 30A
VR = 800V
di/dt =200A/µs
360
Qrr
nC
mJ
1700
IF = 30A
VR = 800V
di/dt =1000A/µs
Err
Reverse Recovery Energy
Tj = 125°C
1.6
RthJC
Junction to Case Thermal Resistance
1.2 °C/W
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
Characteristic
Resistance @ 25°C
Min Typ Max Unit
50
5
3952
4
kΩ
%
K
T25 = 298.15 K
%
∆B/B
TC=100°C
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
⎡
⎤
⎥
⎦
⎛
⎞
1
1
⎜
⎟
⎟
exp B
−
⎢
25/ 85
⎜
T25
T
⎝
⎠
⎣
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APTCV60TLM99T3G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
2.5
V
175*
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
To heatsink
M4
N.m
g
Wt Package Weight
110
* Tjmax = 150°C for Q1 & Q4
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
Q2 & Q3 Typical performance curve
Operating Frequency vs Collector Current
80
VCE=300V
D=50%
G=10Ω
60
R
TJ=150°C
Tc=85°C
40
20
0
Hard
switching
0
10
20
30
40
IC (A)
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APTCV60TLM99T3G
Output Characteristics (VGE=15V)
Output Characteristics
60
60
50
40
30
20
10
0
VGE=19V
TJ=25°C
TJ = 150°C
50
40
30
20
10
0
TJ=125°C
VGE=13V
VGE=15V
TJ=150°C
VGE=9V
TJ=25°C
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
60
50
40
30
20
10
0
2
VCE = 300V
TJ=25°C
VGE = 15V
Eoff
RG = 10Ω
1.5
1
TJ = 150°C
TJ=150°C
0.5
0
Eon
TJ=25°C
10
0
10
20
30
40
50
60
5
6
7
8
9
11
12
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
2.5
70
VCE = 300V
VGE =15V
IC = 30A
Eon
60
50
40
30
20
10
0
2
1.5
1
TJ = 150°C
Eoff
VGE=15V
TJ=150°C
RG=10Ω
0.5
0
Eon
0
10
20
30
40
50
60
70
0
100 200 300 400 500 600 700
CE (V)
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.8
1.6
1.4
1.2
1
0.9
0.7
0.5
0.3
0.1
0.8
0.6
0.4
0.2
0
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
6 - 9
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APTCV60TLM99T3G
Q1 & Q4 Typical performance curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.2
1
0.9
0.7
0.8
0.6
0.4
0.2
0
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Breakdown Voltage vs Temperature
675
120
80
40
0
VGS=10, 20V
6.5V
650
625
600
6V
4.5V
25
50
75
100
125
0
5
10
15
20
TJ, Junction Temperature (°C)
V
DS, Drain to Source Voltage (V)
Maximum Safe Operating Area
DC Drain Current vs Case Temperature
25
100
limited by RDSon
20
15
10
5
100 µs
10
1
Single pulse
TJ=150°C
TC=25°C
10 ms
0.1
0
1
10
100
1000
25
50
75
100
125
150
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
10
8
100000
10000
1000
100
VDS=400V
ID=18A
Ciss
TJ=25°C
6
Coss
4
2
10
Crss
0
1
0
10
20
30
40
50
60
0
25 50 75 100 125 150 175 200
Gate Charge (nC)
VDS, Drain to Source Voltage (V)
7 - 9
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APTCV60TLM99T3G
CR5 & CR6 Typical performance curve
Forward Characteristic of diode
80
60
TJ=125°C
40
TJ=25°C
20
0
0.0
1
0.4
0.8
1.2
1.6
2.0
2.4
VF (V)
Energy losses vs Collector Current
Switching Energy Losses vs Gate Resistance
1
0.75
0.75
0.5
0.5
0.25
0
VCE = 400V
VGE = 15V
RG = 2.5Ω
TJ = 125°C
VCE = 400V
VGE =15V
0.25
IC = 30A
TJ = 125°C
0
0
20
40
60
80
0
2
4
6
8
10
I
C (A)
Gate Resistance (ohms)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
1.2
1
0.9
0.7
0.8
0.6
0.4
0.2
0
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
8 - 9
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APTCV60TLM99T3G
CR2, CR3, CR7 & CR8 Typical performance curve
Forward Current vs Forward Voltage
80
TJ=125°C
60
40
20
TJ=25°C
0
0.0
1.0
2.0
3.0
4.0
VF, Anode to Cathode Voltage (V)
Switching Energy Losses vs Gate Resistance
Energy losses vs Collector Current
2.5
1.8
1.6
1.4
2
1.5
1
1.2
VCE = 800V
VGE = 15V
RG = 5Ω
VCE = 800V
1
0.8
0.6
VGE =15V
IC = 30A
0.5
0
TJ = 125°C
TJ = 125°C
0
20
40
60
80
0
10
20
30
IC (A)
Gate resistance (ohms)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
1.2
1
0.9
0.7
0.5
0.3
0.8
0.6
0.4
0.2
0
0.1
0.05
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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