APTDF100H170 [MICROSEMI]
Bridge Rectifier Diode, 1 Phase, 120A, 1700V V(RRM), Silicon, MODULE-4;
| 型号： | APTDF100H170 |
| 厂家： | 
Microsemi |
| 描述： | Bridge Rectifier Diode, 1 Phase, 120A, 1700V V(RRM), Silicon, MODULE-4 局域网 二极管 |
| 文件： | 总3页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTDF100H170
Fast Diode Rectifier Bridge
Power Module
VRRM = 1700V
IC = 100A @ Tc = 55°C
Application
+
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•
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Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High speed rectifiers
AC1
AC2
Features
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•
•
•
•
•
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Ultra fast recovery times
Soft recovery characteristics
Very low stray inductance
High blocking voltage
High current
-
Low leakage current
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
Benefits
•
High level of integration
AC2
AC1
Outstanding performance at high frequency
operation
•
•
•
•
•
Low losses
Low noise switching
-
+
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Absolute maximum ratings
Symbol
VR
Parameter
Maximum DC reverse Voltage
Max ratings
Unit
1700
V
VRRM
Maximum Peak Repetitive Reverse Voltage
Tc = 25°C
Tc = 55°C
120
Maximum Average Forward
IF(AV)
Duty cycle = 50%
Current
100
125
300
A
IF(RMS)
IFSM
RMS Forward Current
Non-Repetitive Forward Surge Current
Tj = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 3
APT website – http://www.advancedpower.com
APTDF100H170
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
2.2
2.1
2.5
VF
Diode Forward Voltage
IF = 100A
V
250
500
IRM
Maximum Reverse Leakage Current
VR = 1700V
µA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
572
704
20
35
70
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ns
IF = 100A
VR = 900V
Qrr
µC
A
di/dt = 1000A/µs
IRRM
100
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case
0.35 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
3400
-40
-40
-40
1.5
V
150
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Package outline (dimensions in mm)
2 - 3
APT website – http://www.advancedpower.com
APTDF100H170
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.35
0.3
0.9
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.1
0.05
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
250
200
150
100
50
800
700
600
500
400
300
200
TJ=125°C
VR=900V
TJ=25°C
TJ=125°C
200 A
100 A
50 A
TJ=25°C
0
0
1000 2000 3000 4000 5000 6000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VF, Anode to Cathode Voltage (V)
-diF/dt (A/µs)
IRRM vs. Current Rate of Charge
QRR vs. Current Rate Charge
80
70
60
50
40
30
20
400
350
300
250
200
150
100
50
TJ=125°C
VR=900V
TJ=125°C
100 A
200 A
VR=900V
100 A
50 A
200 A
50 A
0
1000 2000 3000 4000 5000 6000
0
1000 2000 3000 4000 5000 6000
-diF/dt (A/µs)
-diF/dt (A/µs)
Max. Average Forward Current vs. Case Temp.
150
Duty Cycle = 0.5
TJ=150°C
125
100
75
50
25
0
0
25
50
75
100 125 150
Case Temperature (ºC)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
3 - 3
APT website – http://www.advancedpower.com
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Bridge Rectifier Diode, 1 Phase, 255A, 1000V V(RRM), Silicon, POWER MODULE-4
MICROSEMI
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