APTGF300A120G [MICROSEMI]
APTGF300A120G NPT IGBT Power Module; APTGF300A120G NPT IGBT功率模块
| 型号： | APTGF300A120G |
| 厂家： | 
Microsemi |
| 描述： | APTGF300A120G NPT IGBT Power Module |
| 文件： | 总5页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF300A120G
VCES = 1200V
Phase leg
IC = 300A @ Tc = 80°C
NPT IGBT Power Module
Application
•
•
•
•
Welding converters
VBUS
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
G1
E1
Features
OUT
•
Non Punch Through (NPT) FAST IGBT
-
-
-
-
-
-
-
-
Low voltage drop
Q2
Low tail current
G2
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
E2
Low leakage current
0/VBUS
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
Benefits
•
Outstanding performance at high frequency
operation
G1
VBUS
0/VBUS
OUT
E1
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
E2
G2
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
400
V
Tc = 25°C
Tc = 80°C
Tc = 25°C
IC
Continuous Collector Current
A
300
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
600
±20
1780
V
W
Tc = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 600A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
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APTGF300A120G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
500
750
3.9
VGE = 0V
ICES
Zero Gate Voltage Collector Current
µA
VCE = 1200V
3.3
4
VGE =15V
IC = 300A
VGE = VCE, IC = 12mA
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
4.5
6.5
±1
V
µA
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
21
VGE = 0V
VCE = 25V
f = 1MHz
nF
Output Capacitance
2.9
1.52
120
Reverse Transfer Capacitance
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive Switching (25°C)
VGE = 15V
50
310
VBus = 600V
ns
IC = 300A
RG = 3Ω
30
130
60
Inductive Switching (125°C)
VGE = 15V
ns
VBus = 600V
360
IC = 300A
Tf
Fall Time
40
RG = 3Ω
VGE = 15V
Tj = 125°C
VBus = 600V
Eon
Turn-on Switching Energy
25
15
mJ
IC = 300A
Tj = 125°C
RG = 3Ω
Eoff
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
VR=1200V
250
500
IRM
Maximum Reverse Leakage Current
µA
Tj = 125°C
IF
DC Forward Current
Tc = 80°C
Tj = 25°C
300
2.1
A
V
VF
Diode Forward Voltage
IF = 300A
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.9
120
210
22
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 300A
Tj = 25°C
VR = 600V
Tj = 125°C
Tj = 25°C
Tj = 125°C
43
di/dt =4500A/µs
7
15
2 - 5
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APTGF300A120G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.07
0.12
RthJC
Junction to Case Thermal Resistance
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
3 - 5
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APTGF300A120G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
600
500
400
300
200
100
0
600
500
400
300
200
100
0
TJ = 125°C
VGE=15V
VGE=20V
TJ=25°C
VGE=12V
VGE=9V
TJ=125°C
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
600
500
400
300
200
100
0
70
60
50
40
30
20
10
0
VCE = 600V
VGE = 15V
RG = 3 Ω
Eon
TJ = 125°C
Eoff
TJ=125°C
TJ=25°C
Er
Eoff
200
0
100
300
400
500
600
5
6
7
8
9
10
11
12
I
C (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
100
Reverse Bias Safe Operating Area
700
VCE = 600V
600
500
400
300
200
100
0
VGE =15V
IC = 300A
TJ = 125°C
Eon
Eoff
80
60
40
20
0
VGE=15V
TJ=125°C
RG=3 Ω
Er
0
300
600
900
CE (V)
1200
1500
0
2
4
6
8
10 12 14 16 18 20
Gate Resistance (ohms)
V
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.9
IGBT
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
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APTGF300A120G
Operating Frequency vs Collector Current
Forward Characteristic of diode
100
80
60
40
20
0
600
500
400
300
200
100
0
VCE=600V
D=50%
RG=3 Ω
TJ=125°C
TJ=125°C
TC=75°C
ZVS
TJ=25°C
hard
switching
ZCS
0
0.5
1
1.5
F (V)
2
2.5
3
0
50 100 150 200 250 300 350
V
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.14
0.12
0.1
0.9
0.7
Diode
0.08
0.06
0.04
0.02
0
0.5
0.3
0.1
0.05
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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MICROSEMI
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