APTGF50TL60T3G [MICROSEMI]
Three level inverter NPT IGBT Power Module; 三电平逆变器NPT IGBT功率模块
| 型号： | APTGF50TL60T3G |
| 厂家： | 
Microsemi |
| 描述： | Three level inverter NPT IGBT Power Module |
| 文件： | 总8页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF50TL60T3G
VCES = 600V
IC = 50A @ Tc = 80°C
Three level inverter
NPT IGBT Power Module
Application
•
•
Solar converter
Uninterruptible Power Supplies
Features
•
Non Punch Through (NPT) Fast IGBT
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
•
•
•
•
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
28 27 26 25
23 22
20 19 18
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
29
30
16
15
31
32
14
13
RoHS Compliant
2
3
4
7
8
10 11
12
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
65
50
230
±20
250
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
100A @ 500V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
1 - 8
www.microsemi.com
APTGF50TL60T3G
All ratings @ Tj = 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
µA
V
V
GE = 0V
CE = 600V
ICES
Zero Gate Voltage Collector Current
500
1.7
4
2.0
2.2
2.45
V
GE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 50A
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
6
V
IGES
Gate – Emitter Leakage Current
400
nA
Q1 to Q4 Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
2200
V
GE = 0V
VCE = 25V
f = 1MHz
pF
323
200
166
20
V
V
GE = 15V
Bus = 300V
nC
Qge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
IC = 50A
Qgc
100
40
Inductive Switching (25°C)
Td(on)
V
GE = 15V
Tr
Rise Time
9
VBus = 400V
IC = 50A
ns
Td(off) Turn-off Delay Time
120
RG = 2.7Ω
Tf
Td(on)
Tr
Fall Time
12
42
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
Turn-on Delay Time
Rise Time
10
ns
Td(off) Turn-off Delay Time
130
21
Tf
Fall Time
VGE = 15V
Tj = 125°C
VBus = 400V
Eon
Turn-on Switching Energy
0.5
1
mJ
IC = 50A
Eoff
Turn-off Switching Energy
Tj = 125°C
RG = 2.7Ω
V
GE ≤15V ; VBus = 360V
Isc
Short Circuit data
225
A
tp ≤ 10µs ; Tj = 125°C
°C/W
RthJC
Junction to Case Thermal Resistance
0.5
2 - 8
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APTGF50TL60T3G
CR1 to CR6 diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
VRRM
IRM
IF
600
V
µA
A
Tj = 25°C
Tj = 150°C
Tc = 80°C
25
500
Maximum Reverse Leakage Current
DC Forward Current
VR=600V
30
1.8
2.2
1.5
IF = 30A
IF = 60A
IF = 30A
2.2
VF
trr
Diode Forward Voltage
Reverse Recovery Time
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
25
160
35
ns
IF = 30A
VR = 400V
di/dt =200A/µs
Qrr
Reverse Recovery Charge
nC
mJ
480
IF = 30A
VR = 400V
di/dt =1000A/µs
Err
Reverse Recovery Energy
Tj = 125°C
0.6
RthJC
Junction to Case Thermal Resistance
1.2 °C/W
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
Characteristic
Resistance @ 25°C
Min Typ Max Unit
50
5
3952
4
kΩ
%
K
T25 = 298.15 K
%
∆B/B
TC=100°C
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
⎡
⎤
⎥
⎦
⎛
⎞
1
1
⎜
⎟
⎟
exp B
−
⎢
25/ 85
⎜
T25
T
⎝
⎠
⎣
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
2.5
V
150
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
To heatsink
M4
N.m
g
Wt Package Weight
110
3 - 8
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APTGF50TL60T3G
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
4 - 8
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APTGF50TL60T3G
Q1 to Q4 Typical performance curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
100
100
75
50
25
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
75
TJ=25°C
TJ=25°C
50
TJ=125°C
TJ=125°C
25
0
0
1
2
3
4
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
Gate Charge
100
75
50
25
0
18
16
14
12
10
8
250µs Pulse Test
< 0.5% Duty cycle
VCE=120V
VCE=300V
IC = 50A
TJ = 25°C
VCE=480V
TJ=125°C
6
4
TJ=25°C
2
0
0
25
50
75 100 125 150 175 200
0
1
2
3
4
5
6
7
8
9
10
VGE, Gate to Emitter Voltage (V)
Gate Charge (nC)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
70
60
50
40
30
20
10
0
1.20
1.10
1.00
0.90
0.80
25
50
75
100
125
25
50
75
100
125
150
TJ, Junction Temperature (°C)
TC, Case Temperature (°C)
5 - 8
www.microsemi.com
APTGF50TL60T3G
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
60
50
40
30
20
175
150
125
100
75
VGE = 15V
VGE=15V,
TJ=125°C
Tj = 125°C
VCE = 400V
RG = 2.7Ω
VGE=15V,
TJ=25°C
VCE = 400V
RG = 2.7Ω
50
0
25
50
75
100
125
150
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
60
50
40
30
20
10
0
60
50
40
30
20
10
0
VCE = 400V
VCE = 400V, VGE = 15V, RG = 2.7Ω
RG = 2.7Ω
TJ = 125°C
VGE=15V,
TJ=125°C
TJ = 25°C
0
25
50
75
100
125
150
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
I
CE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
2.5
2
2
VCE = 400V
TJ=125°C,
VCE = 400V
VGE = 15V
TJ = 125°C
VGE=15V
RG = 2.7Ω
1.5
1
RG = 2.7Ω
1.5
1
0.5
0
0.5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
I
CE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
3
120
100
80
60
40
20
0
VCE = 400V
VGE = 15V
2.5
TJ= 125°C
Eon, 50A
Eoff, 50A
2
1.5
1
0.5
0
Eon, 50A
0
200
400
600
0
5
10
15
20
25
VCE, Collector to Emitter Voltage (V)
Gate Resistance (Ohms)
6 - 8
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APTGF50TL60T3G
Capacitance vs Collector to Emitter Voltage
10000
Operating Frequency vs Collector Current
240
200
160
120
80
VCE = 400V
D = 50%
RG = 2.7Ω
Cies
hard
switching
TJ = 125°C
TC= 75°C
1000
100
Coes
40
Cres
0
0
10
20
30
40
50
0
20
40
60
80
100
V
CE, Collector to Emitter Voltage (V)
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
7 - 8
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APTGF50TL60T3G
CR1 to CR6 Typical performance curve
Forward Characteristic of diode
80
60
TJ=125°C
40
TJ=25°C
20
0
0.0
1
0.4
0.8
1.2
1.6
2.0
2.4
VF (V)
Energy losses vs Collector Current
Switching Energy Losses vs Gate Resistance
1
0.75
0.75
0.5
0.25
0
0.5
0.25
0
VCE = 400V
VGE = 15V
VCE = 400V
GE =15V
V
R
G = 2.5Ω
IC = 30A
TJ = 125°C
TJ = 125°C
0
20
40
60
80
0
2
4
6
8
10
IC (A)
Gate Resistance (ohms)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
1.2
1
0.9
0.7
0.8
0.6
0.4
0.2
0
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
8 - 8
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