APTGT200DH60G [MICROSEMI]
Asymmetrical - Bridge Trench + Field Stop IGBT Power Module; 非对称 - 桥沟道+场站IGBT功率模块
| 型号： | APTGT200DH60G |
| 厂家： | 
Microsemi |
| 描述： | Asymmetrical - Bridge Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT200DH60G
Asymmetrical - Bridge
Trench + Field Stop IGBT®
VCES = 600V
IC = 200A @ Tc = 80°C
Application
•
•
•
Welding converters
VBUS
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Q1
G1
E1
CR3
Features
•
Trench + Field Stop IGBT® Technology
OUT1 OUT2
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Q4
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
G4
CR2
E4
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
0/VBUS
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
OUT1
G1
E1
VBUS
0/VBUS
Benefits
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
E4
G4
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
OUT2
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
290
200
400
±20
625
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 150°C
RBSOA Reverse Bias Safe Operating Area
400A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
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APTGT200DH60G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
1.9
µA
Tj = 25°C
Tj = 150°C
1.5
1.7
5.8
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 200A
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
5.0
6.5
400
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
12.3
nF
Output Capacitance
0.8
0.4
115
45
225
55
130
50
300
70
1
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 300V
IC = 200A
RG = 2Ω
Inductive Switching (150°C)
VGE = ±15V
ns
VBus = 300V
IC = 200A
Tf
Fall Time
RG = 2Ω
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
VGE = ±15V
VBus = 300V
IC = 200A
Eon
Turn on Energy
mJ
mJ
1.8
5.7
7
Eoff
Turn off Energy
RG = 2Ω
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
250
500
IRM
Maximum Reverse Leakage Current
VR=600V
µA
IF
DC Forward Current
200
1.6
1.5
A
V
IF = 200A
VGE = 0V
2
VF
Diode Forward Voltage
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
130
225
9
19
2.3
4.7
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 200A
VR = 300V
di/dt =2200A/µs
2 - 5
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APTGT200DH60G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.24
0.4
RthJC
Junction to Case Thermal Resistance
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
175
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGT200DH60G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
400
350
300
250
200
150
100
50
400
350
300
250
200
150
100
50
VGE=19V
TJ=25°C
TJ = 150°C
TJ=125°C
VGE=13V
VGE=15V
TJ=150°C
VGE=9V
TJ=25°C
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
400
350
300
250
200
150
100
50
14
12
10
8
VCE = 300V
VGE = 15V
Eoff
TJ=25°C
R
G = 2Ω
TJ = 150°C
Er
6
TJ=125°C
4
TJ=150°C
2
Eon
TJ=25°C
10
0
0
0
50 100 150 200 250 300 350 400
5
6
7
8
9
11
12
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
16
500
400
300
200
100
0
VCE = 300V
VGE =15V
I
C = 200A
12
8
Eoff
TJ = 150°C
Eon
Er
VGE=15V
TJ=150°C
RG=2Ω
4
Eon
0
0
2
4
6
8
10
12
14
0
100 200 300 400 500 600 700
Gate Resistance (ohms)
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.25
0.2
IGBT
0.7
0.15
0.1
0.5
0.3
0.05
0.1
0.05
Single Pulse
0.01
0
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration in Seconds
4 - 5
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APTGT200DH60G
Operating Frequency vs Collector Current
Forward Characteristic of diode
400
350
300
250
200
150
100
50
120
100
80
60
40
20
0
VCE=300V
D=50%
ZVS
RG=2Ω
ZCS
TJ=150°C
Tc=85°C
TJ=125°C
TJ=150°C
Hard
switching
TJ=25°C
0
0
0.4
0.8
1.2
VF (V)
1.6
2
2.4
0
50
100
150
C (A)
200
250
I
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4
0.35
0.3
Diode
0.9
0.7
0.25
0.2
0.15
0.1
0.5
0.3
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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