APTGT50H60T1G [MICROSEMI]
Full - Bridge Trench + Field Stop IGBT? Power Module; 全 - 桥沟道+场站IGBT ？电源模块
| 型号： | APTGT50H60T1G |
| 厂家： | 
Microsemi |
| 描述： | Full - Bridge Trench + Field Stop IGBT? Power Module |
| 文件： | 总5页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT50H60T1G
Full - Bridge
Trench + Field Stop IGBT®
Power Module
VCES = 600V
IC = 50A* @ Tc = 80°C
Application
•
•
•
•
Welding converters
3
4
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q3
Q1
Q2
CR1
6
CR3
1
2
9
5
7
Features
•
Trench + Field Stop IGBT® Technology
-
-
-
-
-
-
-
Low voltage drop
Q4
Low tail current
CR2 CR4
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
8
10
•
Very low stray inductance
-
Symmetrical design
12
NTC
11
•
•
Internal thermistor for temperature monitoring
High level of integration
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
•
•
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
•
Pins 3/4 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
600
Unit
V
VCES
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 80°C
TC = 25°C
80*
IC
Continuous Collector Current
A
50*
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
100
±20
V
W
TC = 25°C
TJ = 150°C
176
RBSOA Reverse Bias Safe Operating Area
100A @ 550V
* Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater
than 35°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 5
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APTGT50H60T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
1.9
µA
Tj = 25°C
Tj = 150°C
1.5
1.7
5.8
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 50A
VGE = VCE , IC = 600µA
VGE = 20V, VCE = 0V
5.0
6.5
600
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
3150
200
95
110
45
200
40
120
50
250
60
0.3
VGE = 0V
VCE = 25V
pF
f = 1MHz
Inductive Switching (25°C)
V
GE = ±15V
Bus = 300V
ns
V
Td(off) Turn-off Delay Time
Tf
Td(on)
Tr
Td(off) Turn-off Delay Time
Tf
IC = 50A
RG = 8.2Ω
Fall Time
Turn-on Delay Time
Rise Time
Inductive Switching (150°C)
V
GE = ±15V
Bus = 300V
ns
V
IC = 50A
RG = 8.2Ω
Fall Time
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
VGE = ±15V
Eon
Turn-on Switching Energy
mJ
mJ
V
Bus = 300V
0.43
1.35
1.75
IC = 50A
Eoff
Turn-off Switching Energy
RG = 8.2Ω
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
VR=600V
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
VRRM
600
V
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
250
500
IRM
Maximum Reverse Leakage Current
µA
IF
DC Forward Current
50
1.6
1.5
A
V
IF = 50A
2
VF
Diode Forward Voltage
VGE = 0V
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
100
150
2.6
5.4
0.6
1.2
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 50A
VR = 300V
di/dt =1800A/µs
2 – 5
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APTGT50H60T1G
Thermal and package characteristics
Symbol Characteristic
Min
Typ Max Unit
IGBT
Diode
0.85
°C/W
RthJC
Junction to Case Thermal Resistance
1.42
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
2.5
175
°C
TSTG
125
100
4.7
80
TC
Operating Case Temperature
Torque Mounting torque
To heatsink
M4
N.m
g
Wt
Package Weight
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
50
kΩ
K
B 25/85 T25 = 298.15 K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/ 85
exp B
−
T25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
3 – 5
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APTGT50H60T1G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
100
80
60
40
20
0
100
80
60
40
20
0
VGE=19V
TJ=25°C
TJ = 150°C
TJ=125°C
VGE=13V
VGE=15V
TJ=150°C
VGE=9V
TJ=25°C
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
VCE (V)
2
2.5
3
V
CE (V)
Energy losses vs Collector Current
Transfert Characteristics
100
80
60
40
20
0
3.5
3
VCE = 300V
TJ=25°C
V
GE = 15V
G = 8.2Ω
J = 150°C
Eoff
R
2.5
2
T
Er
1.5
1
TJ=125°C
TJ=150°C
Eon
0.5
0
TJ=25°C
0
20
40
IC (A)
60
80
100
5
6
7
8
9
10
11
12
V
GE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
3
125
100
75
50
25
0
VCE = 300V
V
I
T
GE =15V
C = 50A
J = 150°C
2.5
2
Eoff
Eon
1.5
1
Er
VGE=15V
TJ=150°C
RG=8.2Ω
0.5
0
Eon
5
15
25
35
45
55
65
0
100 200 300 400 500 600 700
CE (V)
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
0.8
0.6
0.4
0.2
0
IGBT
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration in Seconds
4 – 5
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APTGT50H60T1G
Operating Frequency vs Collector Current
Forward Characteristic of diode
100
80
60
40
20
0
120
100
80
60
40
20
0
VCE=300V
D=50%
RG=8.2Ω
TJ=150°C
ZVS
Tc=85°C
ZCS
TJ=125°C
TJ=150°C
Hard
switching
TJ=25°C
0
0.4
0.8
1.2
VF (V)
1.6
2
2.4
0
20
40
IC (A)
60
80
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.6
1.4
1.2
1
Diode
0.9
0.7
0.5
0.8
0.6
0.4
0.2
0
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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