APTLGF300A1208G [MICROSEMI]
Phase leg Intelligent Power Module; 相桥臂智能功率模块
| 型号： | APTLGF300A1208G |
| 厂家： | 
Microsemi |
| 描述： | Phase leg Intelligent Power Module |
| 文件： | 总6页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTLGF300A1208G
VCES = 1200V
IC = 300A @ Tc = 80°C
Phase leg
Intelligent Power Module
Application
•
•
•
•
Motor control
Uninterruptible Power Supplies
Switched Mode Power Supplies
Amplifier
Features
• Non Punch Through (NPT) FAST IGBT
-
-
-
-
-
-
Low voltage drop
Low tail current
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA & SCSOA rated
• Integrated Fail Safe IGBT Protection (Driver)
-
-
Top Bottom input signals Interlock
Isolated DC/DC Converter
• Low stray inductance
• M5 power connectors
• High level of integration
Benefits
VBUS
0/VBUS
OUT
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Very high noise immunity
(common mode rejection > 25kV/µs)
• Galvanic Isolation: 3750V for the optocoupler
2500V for the transformer
• 5V logic level with Schmitt-trigger Input
• Single VDD=5V supply required
• Secondary auxiliary power supplies internally generated
(15V, -6V)
• Optocoupler qualified to AEC-Q100 test quidelines
• RoHS compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
1 - 6
www.microsemi.com
APTLGF300A1208G
All ratings @ Tj = 25°C unless otherwise specified
1. Inverter Power Module
Absolute maximum ratings
Symbol
Parameter
Max ratings
1200
Unit
V
VCES
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
400
300
600
1780
IC
Continuous Collector Current
A
ICM
PD
Pulsed Collector Current
Maximum Power Dissipation
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
600A @ 1200V
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
500
µA
V
GE = 0V
ICES
Zero Gate Voltage Collector Current
VCE = 1200V
750
3.2
4
3.9
VDD = VIN = 5V
IC = 300A
VCE(sat) Collector Emitter Saturation Voltage
V
Tj = 125°C
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
21
2.9
1.52
V
GE = 0V
VCE = 25V
nF
ns
f = 1MHz
Inductive Switching (25°C)
Tr
Tf
Rise Time
Fall Time
50
30
VDD = VIN = 5V
VBus = 600V ; IC = 300A
Inductive Switching (125°C)
Tr
Tf
Rise Time
60
40
25
ns
V
V
DD = VIN = 5V
Bus = 600V
Fall Time
Eon
Turn-on Switching Energy
IC = 300A
mJ
Eoff
Turn-off Switching Energy
15
V
DD = VIN = 5V; VBus =900V
Isc
Short Circuit data
1800
A
tp ≤ 10µs ; Tj = 125°C
RthJC
Junction to Case thermal resistance
0.07 °C/W
2 - 6
www.microsemi.com
APTLGF300A1208G
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
IRM
IF
1200
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
250
500
VR=1200V
300
2.1
1.9
120
VF
Diode Forward Voltage
IF = 300A
V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
µC
mJ
210
22
IF = 300A
VR = 600V
di/dt =6000A/µs
Qrr
56
7.2
18
Err
Reverse Recovery Energy
RthJC
Junction to Case Thermal Resistance
0.12 °C/W
2. Driver
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDD
VINi
Supply Voltage
Input signal voltage i=L, H
5.5
5.5
0.35
2
V
VINi = 0V, i =L & H
VDD=5V, VINH = /VINL ; Fout = 50kHz
IVDDmax
fmax
Maximum Supply current
A
kHz
Maximum Switching Frequency
50
Driver Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
4.5
Typ
5
Max
5.5
5.5
Unit
V
VDD
Operating Supply Voltage
Maximum Input Voltage
Positive Going Threshold Voltage
VINi(max)
VINi (th+)
-0.5
5
V
3.2
i = L, H
VINi(th-) Negative Going Threshold Voltage
1
1
RINi
Td(on)
DT
Input Resistance *
Turn On delay time
Built in dead time
kΩ
Driver + IGBT
Driver + IGBT
1100n
600
750
ns
Td(off)
PWD
Turn Off delay time
Pulse Width Distortion
Propagation Delay Difference
between any two driver
Primary to Secondary Isolation
300
350
ns
PDD
VISOL
Td(on) - Td(off)
-350
2500
VRMS
* Low impedance guarantees good noise immunity.
n Including built in dead time.
3 - 6
www.microsemi.com
APTLGF300A1208G
3. Package characteristics
Symbol Characteristic
Min Typ Max Unit
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
VISOL
TJ
TOP
TSTG
TC
2500
-40
-40
-40
-40
2
V
Operating junction temperature range
Operating Ambient Temperature
Storage Temperature Range
150
85
100
100
4.7
4
°C
Operating Case Temperature
To heatsink
For terminals
M5
M5
Torque Mounting torque
Wt Package Weight
N.m
g
2
550
4. LP8 Package outline (dimensions in mm)
4 - 6
www.microsemi.com
APTLGF300A1208G
Typical IGBT Performance Curve
Output Characteristics
Reverse Bias Safe Operating Area
700
600
600
500
400
300
200
VDD = 5V
500
TJ=25°C
V
IN =5V
400
300
200
100
0
TJ=125°C
TJ=125°C
100
0
0
200 400 600 800 1000 1200
CE (V)
0
1
2
3
4
5
6
V
VCE (V)
Energy losses vs Collector Current
Operating Frequency vs Collector Current
60
70
60
50
40
30
20
10
0
VCE = 600V
VCE=600V
D=50%
V
V
DD = 5V
IN = 5V
50
40
30
20
10
0
hard
switching
Eon
V
DD=5V
IN=5V
TJ = 125°C
V
TJ=125°C
TC=75°C
Limited by
internal gate
drive power
dissipation
Eoff
0
100
200
300
400
500
600
0
50 100 150 200 250 300 350
IC (A)
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
D = 0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
5 - 6
www.microsemi.com
APTLGF300A1208G
Typical diode Performance Curve
Forward Characteristic of diode
Energy losses vs Collector Current
24
600
20
16
12
500
400
300
TJ=125°C
200
100
0
TJ=25°C
8
VR= 600V
TJ = 125°C
4
0
0
0.5
1
1.5
2
2.5
3
0
100
200
300
400
500
600
VF, Anode to Cathode Voltage (V)
IF (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.14
0.12
0.1
0.9
0.7
0.5
0.3
0.1
0.08
0.06
0.04
0.02
0
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
6 - 6
www.microsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明