APTM10DAM05TG [MICROSEMI]
Boost chopper MOSFET Power Module; 升压斩波MOSFET功率模块
| 型号： | APTM10DAM05TG |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper MOSFET Power Module |
| 文件： | 总6页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM10DAM05TG
VDSS = 100V
RDSon = 4.5mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 278A @ Tc = 25°C
NTC2
VBUS
Application
VBUS SENSE
•
AC and DC motor control
•
•
Switched Mode Power Supplies
Power Factor Correction
CR1
Features
•
Power MOS V® MOSFETs
OUT
-
-
-
-
-
Low RDSon
Q2
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
G2
S2
•
•
Kelvin source for easy drive
Very low stray inductance
0/VBUS
NTC1
-
-
Symmetrical design
Lead frames for power connections
•
•
Internal thermistor for temperature monitoring
High level of integration
G2
OUT
OUT
Benefits
S2
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
VBUS
0/VBUS
S2
G2
NTC2
NTC1
VBUS
SENSE
•
•
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
278
207
1100
±30
5
V
Tc = 25°C
ID
Continuous Drain Current
A
Tc = 80°C
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
V
mΩ
W
PD
IAR
EAR
EAS
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
780
100
50
A
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTM10DAM05TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 100V Tj = 25°C
VGS = 0V,VDS = 80V
VGS = 10V, ID = 125A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
200
1000
IDSS
Zero Gate Voltage Drain Current
µA
Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
4.5
5
4
mΩ
V
nA
2
Gate – Source Leakage Current
±200
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
20
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
8
2.9
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
700
120
360
VGS = 10V
VBus = 50V
ID = 250A
nC
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
80
Inductive switching @ 125°C
VGS = 15V
165
280
135
VBus = 66V
ns
ID = 250A
RG = 2.5 Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 250A, RG =2.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 250A, RG = 2.5Ω
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
1.1
1.2
mJ
mJ
1.22
1.28
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
200
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 80°C
350
600
VR=200V
DC Forward Current
200
IF = 200A
IF = 400A
IF = 200A
1
VF
Diode Forward Voltage
V
1.4
0.9
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
60
110
400
1680
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 200A
VR = 133V
di/dt =400A/µs
Qrr
nC
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2 - 6
APTM10DAM05TG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.16
RthJC
Junction to Case Thermal Resistance
0.29 °C/W
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
2500
-40
-40
-40
2.5
V
150
°C
TSTG
Storage Temperature Range
125
100
4.7
TC
Operating Case Temperature
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
SP4 Package outline (dimensions in mm)
ALL DIMENSIONSMARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3 - 6
APTM10DAM05TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.9
0.7
0.5
0.3
Single Pulse
0.01
0.1
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
1200
1000
800
600
400
200
0
240
200
160
120
80
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15V, 10V & 9V
8V
7V
TJ=25°C
6V
40
TJ=125°C
TJ=-55°C
0
0
4
8
12 16 20 24 28
0
1
2
3
4
5
6
7
V
DS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
300
RDS(on) vs Drain Current
1.2
1.1
1
Normalized to
GS=10V @ 125A
V
250
200
150
100
50
VGS=10V
VGS=20V
0.9
0.8
0
0
25 50 75 100 125 150 175 200
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 - 6
APTM10DAM05TG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.15
1.10
1.05
1.00
0.95
0.90
VGS=10V
ID= 125A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10000
1000
100
100µs
limited by
RDSon
1ms
Single pulse
TJ=150°C
TC=25°C
10ms
10
-50 -25
0
25 50 75 100 125 150
1
10
VDS, Drain to Source Voltage (V)
100
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
16
ID=250A
VDS=20V
14
12
10
8
TJ=25°C
Ciss
VDS=50V
VDS=80V
10000
1000
Coss
Crss
6
4
2
0
0
200
400
600
800
1000
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 - 6
APTM10DAM05TG
Delay Times vs Current
Rise and Fall times vs Current
250
350
300
250
200
150
100
50
VDS=66V
RG=2.5Ω
TJ=125°C
L=100µH
tr
tf
200
150
100
50
td(off)
VDS=66V
RG=2.5Ω
TJ=125°C
L=100µH
td(on)
0
0
0
100
200
300
400
0
100
200
300
400
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
5
4
3
2
1
0
3
VDS=66V
ID=200A
TJ=125°C
L=100µH
VDS=66V
RG=2.5Ω
TJ=125°C
L=100µH
Eoff
2.5
2
Eoff
1.5
1
Eon
Eon
0.5
0
Eoff
0
100
200
300
400
0
5
10
15
20
25
30
ID, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
100
1000
100
10
80
60
40
20
0
ZCS
TJ=150°C
TJ=25°C
Hard
switching
ZVS
VDS=66V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
1
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关型号：
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Power Field-Effect Transistor, 139A I(D), 100V, 0.0095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-25
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