APTM50H15FT1G [MICROSEMI]

Full - Bridge MOSFET Power Module; 全 - 桥式MOSFET功率模块


型号：	APTM50H15FT1G
厂家：	Microsemi
描述：	Full - Bridge MOSFET Power Module 全 - 桥式MOSFET功率模块晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总5页 (文件大小：191K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

APTM50H15FT1G

V_DSS= 500V

Full - Bridge

MOSFET Power Module

_DSon= 130mΩ typ @ Tj = 25°C

I_D= 25A @ Tc = 25°C

Application

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

•

Power MOS 8™ FREDFETs

Low R_DSon

Low input and Miller capacitance

Low gate charge

Fast intrinsic reverse diode

Avalanche energy rated

Very rugged

•

Very low stray inductance

Symmetrical design

NTC

•

Internal thermistor for temperature monitoring

High level of integration

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

Each leg can be easily paralleled to achieve a phase

leg of twice the current capability

RoHS Compliant

•

Pins 3/4 must be shorted together

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Breakdown Voltage

500

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

135

±30

156

mΩ

P_D

Maximum Power Dissipation

T_c= 25°C

208

I_AR

Avalanche current (repetitive and non repetitive)

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 – 5

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APTM50H15FT1G

All ratings @ T_j= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

_DS= 500V

V_GS= 0V

Min Typ Max Unit

T_j= 25°C

250

I_DSS

Zero Gate Voltage Drain Current

µA

T_j= 125°C

1000

R_DS(on)Drain – Source on Resistance

V_GS(th)Gate Threshold Voltage

V_GS= 10V, I_D= 21A

V_GS= V_DS, I_D= 1mA

V_GS= ±30 V

130

156

±100 nA

mΩ

I_GSS

Gate – Source Leakage Current

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

5448

735

Max Unit

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

_GS= 0V

V_DS= 25V

f = 1MHz

Q_g

Q_gs

Q_gd

T_d(on)

T_r

Total gate Charge

Gate – Source Charge

Gate – Drain Charge

Turn-on Delay Time

Rise Time

170

_GS= 10V

_Bus= 250V

I_D= 21A

Resistive switching @ 25°C

I_D= 21A

R_G= 4.7Ω

_GS= 15V

_Bus= 333V

T_d(off)Turn-off Delay Time

T_fFall Time

Source - Drain diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

I_S

Continuous Source current

(Body diode)

Tc = 25°C

Tc = 80°C

V_SD

Diode Forward Voltage

V_GS= 0V, I_S= - 21A

dv/dt Peak Diode Recovery X

V/ns

T_j= 25°C

T_j= 125°C

T_j= 25°C

T_j= 125°C

215

370

t_rr

Reverse Recovery Time

Reverse Recovery Charge

I_S= - 21A

V_R= 100V

di_S/dt = 100A/µs

0.90

2.6

Q_rr

µC

X dv/dt numbers reflect the limitations of the circuit rather than the device itself.

I_S≤ - 21A di/dt ≤ 1000A/µs V_DD≤ 333V T_j≤ 125°C

2 – 5

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APTM50H15FT1G

Thermal and package characteristics

Symbol Characteristic

Min Typ Max Unit

R_thJC

V_ISOL

T_J

T_STG

T_C

Junction to Case Thermal Resistance

0.6 °C/W

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

Operating junction temperature range

Storage Temperature Range

4000

-40

2.5

150

125

100

4.7

°C

Operating Case Temperature

Torque Mounting torque

Wt Package Weight

To heatsink

N.m

Temperature sensor NTC ^{(see application note APT0406 on www.microsemi.com for more information).}

Symbol

R₂₅

∆R₂₅/R₂₅

B_25/85

Characteristic

Resistance @ 25°C

Min Typ Max Unit

3952

kΩ

T₂₅= 298.15 K

∆B/B

T_C=100°C

R₂₅

T: Thermistor temperature

R_T: Thermistor value at T

R_T

⎡

⎤

⎥

⎛

⎞

⎜

⎟

exp B

−

⎢

25 / 85

⎜

T₂₅

⎢

⎣

⎥

⎦

⎝

⎠

SP1 Package outline (dimensions in mm)

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com

3 – 5

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APTM50H15FT1G

Typical Performance Curve

Low Voltage Output Characteristics

125

100

V_GS=10V

V_GS=7 &10V

6.5V

T_J=25°C

T_J=125°C

5.5V

T_J=125°C

V_DS, Drain to Source Voltage (V)

Transfert Characteristics

Normalized R_DSonvs. Temperature

2.5

V_DS> I_D(on)xR_DS(on)MAX

V_GS=10V

I_D=21A

250µs pulse test @ < 0.5 duty cycle

T_J=125°C

1.5

T_J=25°C

0.5

100

125

150

T_J, Junction Temperature (°C)

V_GS, Gate to Source Voltage (V)

Gate Charge vs Gate to Source

Capacitance vs Drain to Source Voltage

100000

10000

1000

100

V_DS=100V

V_DS=250V

I_D=21A

T_J=25°C

Ciss

V_DS=400V

Coss

Crss

100

150

200

120

150

180

V_DS, Drain to Source Voltage (V)

Gate Charge (nC)

4 – 5

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APTM50H15FT1G

Drain Current vs Source to Drain Voltage

T_J=125°C

T_J=25°C

0.2

0.4

0.6

0.8

1.2

V_SD, Source to Drain Voltage (V)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.9

0.7

0.5

0.3

0.1

Single Pulse

0.01

0.05

0.00001

0.0001

0.001

0.1

rectangular Pulse Duration (Seconds)

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

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