APTML50UM90R020T1AG_10 [MICROSEMI]
Linear MOSFET Power Module; 线性MOSFET功率模块型号: | APTML50UM90R020T1AG_10 |
厂家: | Microsemi |
描述: | Linear MOSFET Power Module |
文件: | 总3页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APTML50UM90R020T1AG
VDSS = 500V
RDSon = 90mΩ typ @ Tj = 25°C
ID = 52A* @ Tc = 25°C
Linear MOSFET
Power Module
Application
•
Electronic load dedicated to power supplies and
battery discharge testing
Features
•
•
•
•
•
Linear MOSFET
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
•
•
Direct mounting to heatsink (isolated package)
easy series and parallels combinations for power and
voltage improvements
•
•
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
•
•
Low profile
RoHS Compliant
Pins 1/2 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
52*
39*
200
±30
95
V
Tc = 25°C
Tc = 80°C
ID
Continuous Drain Current
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
V
mΩ
W
PD
IAR
EAR
EAS
Maximum Power Dissipation n
Tc = 25°C
568
52
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
A
50
mJ
Single Pulse Avalanche Energy
3000
* Output current must be limited to 31A @ TC=25°C and 22A @ TC=80°C to not exceed the shunt specification.
n In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTML50UM90R020T1AG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VDS = 500V ; VGS = 0V Tj = 25°C
25
µA
250
IDSS
Zero Gate Voltage Drain Current
VDS = 400V ; VGS = 0V Tj = 125°C
VGS = 10V, ID = 26A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGSS
90
95
4
mΩ
V
2
Gate – Source Leakage Current
±100 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
7600
1280
620
Max Unit
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
V
GS = 0V
DS = 25V
pF
f = 1MHz
Shunt Electrical Characteristics
Symbol Characteristic
Min
Typ
20
2
Max Unit
Rsh
Tsh
Resistance value
Tolerance
mΩ
%
TC=25°C
TC=80°C
TC=25°C
TC=80°C
20
W
10
Psh
Ish
Load capacity
31
Current capacity
A
22
Temperature sensor PTC
Symbol Characteristic
Min
1980
1.676 1.696 1.716
Typ
Max
2020
Unit
R25
Resistance @ 25°C
Ω
R100/R25 Resistance ratio
R-55/R25 Resistance ratio
Tamb=100°C & 25°C
Tamb=-55°C & 25°C
0.48
0.49
0.50
B
Temperature coefficient
7900
ppm/K
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
TSTG
TC
Junction to Case Thermal Resistance
MOSFET
0.22 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
4000
-40
-40
-40
2.5
V
150
125
100
4.7
80
°C
Operating Case Temperature
Torque Mounting torque
Wt Package Weight
To heatsink
M4
N.m
g
2 – 3
www.microsemi.com
APTML50UM90R020T1AG
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Typical Performance Curve (linear mode)
Power vs Drain source voltage
Drain Current vs Drain source voltage
400
100.0
TJ=125°C
TJ=125°C
350
10.0
1.0
300
250
200
0.1
0
50 100 150 200 250 300 350 400
0
100
200
300
400
Drain Source Voltage (V)
Drain Source Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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