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ARF461A [MICROSEMI]

RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE; RF功率MOSFET N沟道增强模式
ARF461A
型号： ARF461A
厂家： Microsemi    Microsemi
描述：

RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
RF功率MOSFET N沟道增强模式

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ARF461A(G)  
ARF461B(G)  
Common  
Source  
RF POWER MOSFETs  
N-CHANNEL ENHANCEMENT MODE  
250V 150W  
65MHz  
The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for push-  
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been  
optimized for both linear and high efficiency classes of operation.  
• Specified 250 Volt, 40.68 MHz Characteristics:  
• Low Cost Common Source RF Package.  
• Low Vth thermal coefficient.  
•
•
•
Output Power = 150 Watts.  
Gain = 13dB (Class AB)  
Efficiency = 75% (Class C)  
• Low Thermal Resistance.  
• Optimized SOA for Superior Ruggedness.  
• RoHS Compliant  
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Symbol  
Parameter  
ARF461AG/BG  
Unit  
VDSS  
Drain-Source Voltage  
1000  
1000  
6.5  
V
VDGO  
ID  
Drain-Gate Voltage  
Continuous Drain Current @ TC = 25°C  
Gate-Source Voltage  
A
V
VGS  
PD  
±30  
Total Power Dissipation @ TC = 25°C  
Junction to Case  
250  
W
Rθ  
0.50  
°C/W  
JC  
TJ, TSTG  
TL  
Operating and Storage Junction Temperature Range  
Lead Temperature: 0.063” from Case for 10 Sec.  
-55 to 150  
300  
°C  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
BVDSS  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)  
On State Drain Voltage 1 (ID(ON) = 3.25A, VGS = 10V)  
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C)  
Gate-Source Leakage Current (VDS = ±30V, VDS = 0V)  
Forward Transconductance (VDS = 25V, ID = 3.25A)  
Gate Threshold Voltage (VDS = VGS, ID = 50mA)  
1000  
V
VDS(ON)  
6.5  
25  
IDSS  
μA  
250  
IGSS  
gfs  
±100  
5
nA  
3
3
4
mhos  
Volts  
VGS(TH)  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
Microsemi Website - http://www.microsemi.com  
Dynamic Characteristics  
ARF461A/B  
Symbol  
CISS  
Parameter  
Test Conditions  
Min  
Typ  
1700  
175  
50  
Max  
Unit  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
VGS = 0V  
Coss  
Crss  
VDS = 50V  
pF  
f = 1MHz  
td(on)  
tr  
td(off)  
tf  
8
VGS = 15V  
5
V
DD = 0.5VDSS  
ns  
ID = ID (Cont.) @ 25°C  
Turn-off Delay Time  
Fall Time  
21  
RG = 1.6Ω  
10.1  
Functional Characteristics  
Symbol  
Characteristic  
Test Conditions  
Min  
13  
Typ  
15  
Max  
Unit  
dB  
GPS  
Common Source Amplifier Power Gain  
Drain Efficiency  
f = 40.68MHz  
VGS = 0V VDD = 250V  
POUT = 150W  
η
70  
75  
%
Ψ
Electrical Ruggedness VSWR 10:1  
No Degradation in Output Power  
1
Pulse Test: Pulse width < 380 ꢀS, Duty Cycle < 2%  
APT Reserves the right to change, without notice, the specifications and information contained herein.  
5000  
Ciss  
1000  
500  
Coss  
Crss  
100  
50  
10  
.1  
.5  
1
5
10  
50  
200  
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage  
8
6
4
2
0
26  
TJ = -55°C  
100uS  
OPERATION HERE  
LIMITED BY R (ON)  
DS  
10  
5
VDS> ID (ON) x RDS (ON)MAX.  
250ꢀSEC. PULSE TEST  
@ <0.5 % DUTY CYCLE  
1mS  
10mS  
1
.5  
100mS  
DC  
TJ = +125°C  
TJ = -55°C  
TC =+25°C  
TJ =+150°C  
SINGLE PULSE  
TJ = +25°C  
2
.1  
0
4
6
8
1
10  
100  
1000  
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)  
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
Figure 3, Typical Transfer Characteristics  
Figure 4, Typical Maximum Safe Operating Area  
ARF461A/B  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
25  
20  
15  
10  
5
VGS=15, 10, 8 & 6.5V  
6V  
5.5V  
5V  
4.5V  
4V  
0
-50 -25  
0
25 50 75 100 125 150  
TC, CASE TEMPERATURE (°C)  
Figure 5, Typical Threshold Voltage vs Temperature  
1
5
10  
15  
20  
25  
30  
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
Figure 6, Typical Output Characteristics  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0
0.9  
0.7  
0.5  
0.3  
0.1  
0.05  
SINGLE PULSE  
10-3  
10-5  
10-4  
10-2  
RECTANGULAR PULSE DURATION (SECONDS)  
10-1  
1.0  
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration  
RC MODEL  
Junction  
temp. ( ”C)  
0.0284  
0.165  
0.307  
0.00155F  
0.00934F  
0.128F  
Power  
(Watts)  
Case temperature  
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL  
Table 1 - Typical Class AB Large Signal Input - Output Impedance  
Freq. (MHz)  
ZOL (7)  
Z
(7)  
in  
2.0  
13.5  
27  
40  
65  
20.9 - j 9.2  
2.4 - j 6.8  
.57 - j 2.6  
.31 - j 0.5  
.44 + j 1.9  
38 - j 2.6  
31 - j 14  
19.6 - j 17.6  
12.5 - j 15.8  
6.0 - j 10.5  
Z
- Gate shunted with 257  
I
DQ = 100mA  
in  
ZOL - Conjugate of optimum load for 150 Watts output at V = 125V  
dd  
ARF461A/B  
L4  
+
-
C1 -- 1800pF + 1000pF 100V chips  
mounted at gate lead  
250V  
+
-
Bias  
0 - 12V  
C7  
C8  
C2-C5 -- Arco 463 Mica trimmer  
C6-C8 -- .1 μF 500V ceramic chip  
C9 -- 2200 pF 500 V chip  
L1 -- 4t #20 AWG .25"ID .3 "L ~80nH  
L2 -- 7t #16 AWG .4" ID .5"L ~335nH  
L3 -- 25t #24 AWG .25"ID ~2.2uH  
L4 -- VK200-4B ferrite choke 3uH  
R1-R2 -- 51 Ohm 0.5W Carbon  
DUT = ARF461A/B  
L3  
C6  
R1  
C9  
C4  
RF  
Input  
RF  
Output  
C5  
L1  
L2  
C3  
DUT  
C1  
R2  
C2  
40.68 MHz Test Circuit  
TO-247 Package Outline  
4.69 .185  
5.31 (.209)  
15.49 (.610)  
16.26 (.640)  
1.49 (.059)  
2.49 (.098)  
5.38 (.212)  
6.20 (.244)  
6.15 (.242) BSC  
NOTE: These two parts comprise a symmetric pair of RF  
power transistors and meet the same electrical specifica-  
tions. The device pin-outs are the mirror image of each  
other to allow ease of use as a push-pull pair.  
20.80 (.819)  
21.46 (.845)  
3.50 (.138)  
3.81 (.150)  
2.87 (.113)  
3.12 (.123)  
4.50 (.177) Max.  
Device  
1.65 (.065)  
2.13 (.084)  
0.40 (.016)  
0.79 (.031)  
ARF- A  
ARF- B  
19.81 (.780)  
20.32 (.800)  
1.01 (.040)  
1.40 (.055)  
Gate ------- Drain  
Source ---- Source  
Drain ------- Gate  
2.21 (.087)  
2.59 (.102)  
5.45 (.215) BSC  
2-Plcs.  
Dimensions in Millimeters and (Inches)  
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583  
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262  
and foreign patents. US and Foreign patents pending. All Rights Reserved.  

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