ARF477FL [MICROSEMI]

RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR; RF功率MOSFET N沟道PUSH - PULL PAIR


型号：	ARF477FL
厂家：	Microsemi
描述：	RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR RF功率MOSFET N沟道PUSH - PULL PAIR 晶体射频场效应晶体管 CD 放大器局域网
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Common Source

Push-Pull Pair

ARF477FL

RF POWER MOSFET

N-CHANNEL PUSH - PULL PAIR

165V 400W 100MHz

The ARF477FL is a matched pair of RF power transistors in a common source conﬁguration. It is designed for high

voltage push-pull or parallel operation in narrow band ISM and MRI power ampliﬁers up to 100 MHz.

• High Performance Push-Pull RF Package.

• Speciﬁed 150 Volt, 65 MHz Characteristics:

• High Voltage Breakdown and Large SOA

•

Output Power = 400 Watts

Gain = 15dB (Class AB)

Efﬁciency = 50% min

for Superior Ruggedness.

•

• Low Thermal Resistance.

• RoHS Compliant

•

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise speciﬁed.

Symbol

Parameter

Ratings

500

Unit

V_DSS

Drain-Source Voltage

V_DGO

I_D

Drain-Gate Voltage

500

Continuous Drain Current @ T_C= 25°C (each device)

Gate-Source Voltage

V_GS

±30

P_D

Total Power Dissipation @ T_C= 25°C

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063” from Case for 10 Sec.

750

T_J, T_STG

T_L

-55 to 175

300

°C

Static Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

BV_DSS

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 μA)

On State Drain Voltage ¹(I_D(ON)= 7.5A, V_GS= 10V)

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 50V_DSS, V_GS= 0, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 15V, I_D= 7.5A)

500

V_DS(ON)

2.9

I_DSS

μA

250

±100

I_GSS

g_fs

3.5

0.9

5.6

mhos

g_fs1/g_fa2

V_GS(TH)

Forward Transconductance Match Ratio (V_DS= 15V, I_D= 5A)

Gate Threshold Voltage (V_DS= V_GS, I_D= 50mA)

1.1

Gate Threshold Voltage Match (V_DS= V_GS, I_D= 50mA)

0.2

Volts

Thermal Characteristics

Symbol

Parameter

Min

Typ

0.18

0.30

Max

0.2

Unit

R_θJC

Junction to Case

°C/W

R_θJHS

Junction to Sink (High Efﬁciency Thermal Joint Compound and Planar Heat Sink Surface.)

0.32

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

DYNAMIC CHARACTERISTICS (per section)

ARF477FL

Symbol

C_ISS

Parameter

Test Conditions

V_GS= 0V

Min

Typ

1890

350

Max

Unit

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

2100

390

C_oss

V_DS= 50V

C_rss

f = 1MHz

t_d(on)

t_r

t_d(off)

t_f

V_GS= 15V

V_DD= 250V

I_D= I_D[Cont.]@ 25°C

Turn-off Delay Time

Fall Time

R_G= 1.6 W

4.0

Functional Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

G_PS

Common Source Ampliﬁer Power Gain

Drain Efﬁciency

f = 27MHz

I_dq= 0mA V_DD= 125V

P_OUT= 300W

Electrical Ruggedness VSWR 10:1

No Degradation in Output Power

1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.

Microsemi reserves the right to change, without notice, the speciﬁcations and information contained herein.

5000

V_GS=15 & 10V

→

C_iss

1000

500

C_oss

C_rss

100

6.5V

5.5V

4.5V

150

V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 1, Typical Output Characteristics

Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

56.00

T_J= -55°C

→

OPERATION HERE

LIMITED BY R

(ON)

V_DS> I_D(ON) x R_DS(ON)MAX.

250ꢀSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

10.00

1.00

0.10

→

T_J= +125°C

T = -55°C

←

T_C=+25°C

T_J=+150°C

SINGLE PULSE

T_J= +25°C →

V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 4, Typical Maximum Safe Operating Area

50 100

500

V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 3, Typical Transfer Characteristics

ARF477FL

0.25

0.20

0.15

0.10

D = 0.9

0.7

Note:

0.5

0.3

0.05

Duty Factor D =

0.1

Peak T = P

x Z

+ T

θJC C

0.05

SINGLE PULSE

10^-3

10^-5

10^-4

10^-2

10 ^-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

Figure 5a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

T_J(˚C)

T_C(˚C)

Z_EXTare the external thermal

impedances: Case to sink,

sink to ambient, etc. Set to

zero when modeling only

the case to junction.

.108

.0915

Dissipated Power

(Watts)

.133F

.0111F

Figure 5b, TRANSIENT THERMAL IMPEDANCE MODEL

Freq. (MHz)

Z_in(Ω)

Z_OUT(Ω)

1.5 - j 10

1.9 - j 1.3

2.2 - j 0.82

24 - j 37

13 - j 29

7.9 - j 24

Z_IN- Gate shunted with 100Ω

I_dq= 0

Z_OL- Conjugate of optimum load for 400 Watts output at V_dd=125V

ARF477FL

65MHz Test Circuit

Thermal Considerations and Package Mounting:

The rated power dissipation is only available when the package

mounting surface is at 25°C and the junction temperature is 175°C.

The thermal resistance between junctions and case mounting sur-

face is 0.23 °C/W. When installed, an additional thermal impe-

dance of 0.07°C/W between the package base and the mounting

surface is typical. Insure that the mounting surface is smooth and

flat. Thermal joint compound must be used to reduce the effects of

small surface irregularities. Use the minimum amount necessary to

coat the surface. The heatsink should incorporate a copper heat

spreader to obtain best results.

.325 +/- .010

.080

1.000

.125R

4 pls

.125dia

4 pls

.570

ARF477FL

.320

The package design clamps the ceramic base to the heatsink. A

clamped joint maintains the required mounting pressure while al-

lowing for thermal expansion of both the base and the heat sink.

Four 4-40 (M3) screws provide the required mounting force. T = 6

in-lb (0.68 N-m).

1.250

.325

.175

HAZARDOUS MATERIAL WARNING

The white ceramic portion of the device between leads

and mounting surface is beryllium oxide, BeO. Beryllium

oxide dust is toxic when inhaled. Care must be taken dur-

ing handling and mounting to avoid damage to this area.

These devices must never be thrown away with general

industrial or domestic waste.

.200

.300

.005 .040

1.500

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583

4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

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