BZV55C9V1 [MICROSEMI]

LEADLESS PACKAGE FOR SURFACE MOUNT; 无铅封装用于表面安装
BZV55C9V1
型号: BZV55C9V1
厂家: Microsemi    Microsemi
描述:

LEADLESS PACKAGE FOR SURFACE MOUNT
无铅封装用于表面安装

二极管 测试
文件: 总1页 (文件大小:24K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
• ZENER DIODES  
BZV55 C2V4  
thru  
BZV55 C75  
•LEADLESS PACKAGE FOR SURFACE MOUNT  
• DOUBLE PLUG CONSTRUCTION  
• METALLURGICALLY BONDED  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
Power Derating: 3.33 mW / °C above +50°C  
Forward Voltage: @ 200mA: 1.1 Volts maximum  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
MAXIMUM  
DIFFERENTIAL  
RESISTANCE  
MAXIMUM  
REVERSE  
CURRENT  
TYPE  
ZENER VOLTAGE  
(NOTE 1)  
V
@ I  
r
@ I  
I
@ V  
Z
ZT  
diff  
Z
R
R
VOLTS  
MIN MAX  
mA  
OHMS  
mA  
µ A  
VOLTS  
MILLIMETERS  
INCHES  
BZV55 C2V4  
BZV55 C2V7  
BZV55 C3V0  
BZV55 C3V3  
BZV55 C3V6  
2.2  
2.5  
2.8  
3.1  
3.4  
2.6  
2.9  
3.2  
3.5  
3.8  
5
5
5
5
5
100  
100  
95  
95  
90  
5
5
5
5
5
50  
20  
10  
5
1
1
1
1
1
DIM MIN MAX MIN MAX  
D
F
1.60  
0.41  
3.30  
1.70 0.063 0.067  
0.55 0.016 0.022  
3.70 .130 .146  
5
G
BZV55 C3V9  
BZV55 C4V3  
BZV55 C4V7  
BZV55 C5V1  
BZV55 C5V6  
3.7  
4.0  
4.4  
4.8  
5.2  
4.1  
4.6  
5.0  
5.4  
6.0  
5
5
5
5
5
90  
90  
80  
60  
40  
5
5
5
5
5
3
3
3
2
1
1
1
2
2
2
G1  
S
2.54 REF.  
0.03 MIN.  
.100 REF.  
.001 MIN.  
BZV55 C6V2  
BZV55 C6V8  
BZV55 C7V5  
BZV55 C8V2  
BZV55 C9V1  
5.8  
6.4  
7.0  
7.7  
8.5  
6.6  
7.2  
7.9  
8.7  
9.6  
5
5
5
5
5
10  
15  
15  
15  
15  
5
5
5
5
5
3
2
1
.700  
.500  
4
4
5
5
6
DESIGN DATA  
CASE: DO-213AA, Hermetically sealed  
glass case. (MELF, SOD-80, LL34)  
BZV55 C10  
BZV55 C11  
BZV55 C12  
BZV55 C13  
BZV55 C15  
9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
5
5
5
5
5
20  
20  
25  
30  
30  
5
5
5
5
5
.200  
.100  
.100  
.100  
.050  
7
8
8
8
10.5  
10.4  
11.4  
12.4  
13.8  
LEAD FINISH: Tin / Lead  
BZV55 C16  
BZV55 C18  
BZV55 C20  
BZV55 C22  
BZV55 C24  
15.3  
16.8  
18.8  
20.8  
22.8  
17.1  
19.1  
21.2  
23.3  
25.6  
5
5
5
5
5
40  
45  
55  
55  
70  
5
5
5
5
5
.050  
.050  
.050  
.050  
.050  
11.2  
12.6  
14.0  
15.4  
16.8  
THERMAL RESISTANCE: (R  
100 ÞC/W maximum at L = 0 inch  
):  
OJEC  
THERMAL IMPEDANCE: (Z  
): 35  
OJX  
BZV55 C27  
BZV55 C30  
BZV55 C33  
BZV55 C36  
BZV55 C39  
25.1  
28.0  
31.0  
34.0  
37.0  
28.9  
32.0  
35.0  
38.0  
41.0  
2
2
2
2
2
80  
80  
80  
90  
130  
2
2
2
2
2
.050  
.050  
.050  
.050  
.050  
18.9  
21.0  
23.1  
25.2  
27.3  
ÞC/W maximum  
POLARITY: Diode to be operated with  
the banded (cathode) end positive.  
BZV55 C43  
BZV55 C47  
BZV55 C51  
BZV55 C56  
BZV55 C62  
40.0  
44.0  
48.0  
52.0  
58.0  
46.0  
50.0  
54.0  
60.0  
66.0  
2
2
2
2
2
150  
170  
180  
200  
215  
2
2
2
2
2
.050  
.050  
.050  
.050  
.050  
30.1  
32.9  
35.7  
39.2  
43.4  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) Of this Device is Approximately  
+6PPM/°C. The COE of the Mounting  
Surface System Should Be Selected To  
Provide A Suitable Match With This  
Device.  
BZV55 C68  
BZV55 C75  
64.0  
70.0  
72.0  
79.0  
2
2
240  
255  
2
2
.050  
.050  
47.6  
52.2  
NOTE 1  
Nominal Zener voltage is measured with the device junction in thermal  
equilibrium at an ambient temperature of 25°C + 3°C.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
WEBSITE: http://www.microsemi.com  
FAX (978) 689-0803  
165  

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