FSF1510R [MICROSEMI]

Power Field-Effect Transistor, 15A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, 3 PIN;
FSF1510R
型号: FSF1510R
厂家: Microsemi    Microsemi
描述:

Power Field-Effect Transistor, 15A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, 3 PIN

局域网 晶体管
文件: 总1页 (文件大小:24K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

FSF15F60

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC, TO-220, 3/2 PIN
NIEC

FSF1820

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, 3 PIN
MICROSEMI

FSF1820E3

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, 3 PIN
MICROSEMI

FSF2210E3

Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, 3 PIN
MICROSEMI

FSF250

24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
INTERSIL

FSF2506

Small Signal Field-Effect Transistor, TO-254, 3 PIN
MICROSEMI

FSF250D

24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
INTERSIL

FSF250D1

24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
INTERSIL

FSF250D1

24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
RENESAS

FSF250D3

24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
INTERSIL

FSF250D3

24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
RENESAS

FSF250D4

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 24A I(D) | TO-254AA
ETC