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GC9934-174C-QR1

更新时间：2024-09-18 15:20:50
品牌：MICROSEMI
描述：Mixer Diode, Medium Barrier, S Band, Silicon, ROHS COMPLIANT, CASE 174C, 4 PIN

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GC9934-174C-QR1 概述

Mixer Diode, Medium Barrier, S Band, Silicon, ROHS COMPLIANT, CASE 174C, 4 PIN 微波混频二极管

GC9934-174C-QR1 规格参数

是否Rohs认证： 符合生命周期：Active
包装说明：O-CRDB-F4针数：4
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.60风险等级：5.63
配置：RING, 4 ELEMENTS最大二极管电容：0.5 pF
二极管元件材料：SILICON二极管类型：MIXER DIODE
最大正向电压 (VF)：0.51 V频带：S BAND
JESD-30 代码：O-CRDB-F4JESD-609代码：e4
元件数量：4端子数量：4
最高工作温度：150 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：ROUND封装形式：DISK BUTTON
峰值回流温度（摄氏度）：NOT SPECIFIED子类别：Bridge Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子面层：GOLD端子形式：FLAT
端子位置：RADIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
肖特基势垒类型：MEDIUM BARRIERBase Number Matches：1

GC9934-174C-QR1 数据手册

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GC9901 – GC9944  
Schottky Barrier Diodes  
®
TM  
For Mixers and Detectors  
RoHS Compliant  
DESCRIPTION  
KEY FEATURES  
Schottky Barrier devices are currently available in single beamlead, dual “T”,  
ring quad and bridge quad configurations. Devices are available in monolithic  
form for hybrid applications as well as in hermetic or non-hermetic packages.  
Monolithic devices are recommended for highest frequency, broadband  
designs. The beamlead design eliminates the problems associated with wire  
bonding very small junction devices thus improving reliability and  
performance in MIC applications. Our in house epitaxy process capability  
insures repeatability for lowest conversion loss through Ku Band. A broad  
range of unique metallization schemes produce Microsemi’s complete line of  
barrier heights. Diodes are currently available with barrier heights as low as  
240 mV and up to 625 mV per junction. By optimizing epitaxy and  
metallization, these devices achieve the lowest RS-CJ products resulting in  
exceptional conversion loss performance. “High Rel” screening is available on  
packaged devices per your requirements.  
. Monolithic design for lowest  
parasitics  
. Low Conversion Loss  
. Suitable for applications to 26.5  
GHz  
. Excellent Noise Figure  
. Available in low, medium and high  
barrier heights  
. Can be supplied as monolithic  
devices for hybrid applications or  
as packaged devices  
This series of devices meets RoHS requirements per EU Directive  
2002/95/EC.  
. RoHS Compliant1  
1 These devices are supplied with Gold  
plated terminations. Consult factory for  
details.  
APPLICATIONS  
Schottky barrier diodes are suitable for a variety of circuit applications ranging  
from single ended RF mixers to low level high speed switching. The  
monolithic beamlead design minimizes parasitic inductance and capacitance  
insuring repeatable performance through Ku band. Single junction devices  
such as the style ‘S12’ are well suited for RF Mixers, level detectors, phase  
detectors, modulators, etc. With junction capacitances as low as .06 pF,  
Monolithic Quads are ideally suited for broadband double balanced mixer  
designs through 26.5 GHz. The Ultra-Low Barrier devices (GC9900 Series)  
are designed for mixers with low or starved Local Oscillator levels where  
optimal conversion loss is a must. High barrier diodes, (GC9940 Series) are  
designed for applications where high drive levels are available, such as,  
Doppler mixers or motion detection. Schottky diodes are available in Ultra-  
Low, Medium and High Drive levels to fit virtually any circuit requirement.  
APPLICATIONS/BENEFITS  
. Mixers  
. Level Detectors  
. Phase Detectors  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
Rating  
Symbol  
Value  
Unit  
Maximum Power Handling  
Storage Temperature  
P
100  
mW  
ºC  
TSTG  
-65 to +175  
Operating Temperature  
TOP  
-55 to +150  
ºC  
IMPORTANT:  
For the most current data, consult our web site: www.microsemi.com  
Specifications are subject to change. Consult factory for latest information.  
These devices are ESD sensitive and must be handled use using ESD precautions.  
Microsemi  
Page 1  
Copyright 2006  
Rev: 2009-01-19  
Microwave Products  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  
GC9901 – GC9944  
Schottky Barrier Diodes  
®
TM  
For Mixers and Detectors  
RoHS Compliant  
CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)  
.
ZIF(Ω)5  
VB(V)2  
CJ(pF)3  
VF(mV)  
RD(Ω)  
NFSSB  
Model1  
Number  
Barrier  
Height  
Freq  
Range  
4
(db)  
IR=10μA  
(Min)  
@0V  
@1 mA  
@5 mA  
(Max)  
0.10  
0.15  
0.30  
0.50  
0.10  
0.15  
0.30  
0.50  
0.10  
0.15  
0.30  
0.50  
0.10  
0.15  
0.30  
0.50  
0.10  
0.15  
0.30  
0.50  
(Max)  
340  
310  
300  
280  
360  
350  
340  
330  
470  
460  
440  
420  
550  
540  
530  
510  
660  
640  
630  
610  
(Max)  
20  
16  
14  
12  
20  
16  
14  
12  
20  
16  
14  
12  
20  
16  
14  
12  
20  
16  
14  
12  
(Typ)  
6.5  
6
(Typ)  
GC9901  
GC9902  
GC9903  
GC9904  
GC9911  
GC9912  
GC9913  
GC9914  
GC9921  
GC9922  
GC9923  
GC9924  
GC9931  
GC9932  
GC9933  
GC9934  
GC9941  
GC9942  
GC9943  
GC9944  
Ku-Ka  
X
ULTRA  
LOW  
2.0  
140  
170  
200  
250  
300  
C
5.5  
5.5  
6.5  
6
S
Ku-Ka  
X
LOW  
2.0  
2.0  
3.0  
4.0  
C
5.5  
5.5  
6.5  
6
S
Ku-Ka  
X
LOW-  
MED  
C
5.5  
5.5  
6.75  
6.25  
5.75  
5.5  
7
S
Ku-Ka  
X
MEDIUM  
HIGH  
C
S
Ku-Ka  
X
6.25  
5.75  
5.75  
C
S
Notes  
1. When ordering, specify appropriate package style.  
IE: Order GC9901-S12 for single beamlead configuration.  
2. V b measured at 10µA (N/A on ring quads).  
3. 0 Volts, F=1 MHz (diagonal leads on quads).  
4. L.O. = 0 dBm, Nif = 1.5 dB, F = 10 GHz  
5. L.O. = 0 dBm  
Microsemi  
Page 2  
Copyright 2006  
Rev: 2009-01-19  
Microwave Products  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  
GC9901 – GC9944  
Schottky Barrier Diodes  
®
TM  
For Mixers and Detectors  
RoHS Compliant  
VF CURVES  
T Y P I C AL N F C U R V E S  
Typical I-V Curves  
100  
10  
2
3
1
4
1
1-GC9902  
2-GC9922  
3-GC9932  
4-GC9942  
0.1  
0.01  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
VF(V)  
T Y P I C AL I F I M P E D AN C E C U R V E S  
Microsemi  
Microwave Products  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  
Page 3  
Copyright 2006  
Rev: 2009-01-19  
GC9901 – GC9944  
Schottky Barrier Diodes  
®
TM  
For Mixers and Detectors  
RoHS Compliant  
PACKAGE STYLE UC  
PACKAGE STYLE S12  
Order as GC9900-S12  
PACKAGE STYLE TCC  
Order as GC9900-UC  
PACKAGE STYLE TSR  
ORDER AS GC9900-TCC  
Also available as TCA (‘T’ Common Anode)  
ORDER AS GC9900-TSR  
PACKAGE STYLE QR1  
PACKAGE STYLE QB1  
ORDER AS GC9900-QR1  
ORDER AS GC9900-QB1  
DISCRETE AN D MONOLITHIC PAC K AG E OPTIONS  
Microsemi  
Microwave Products  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  
Page 4  
Copyright 2006  
Rev: 2009-01-19  
GC9901 – GC9944  
Schottky Barrier Diodes  
®
TM  
For Mixers and Detectors  
RoHS Compliant  
PACKAGE STYLE 127A  
PACKAGE STYLE 128A  
PACKAGE STYLE 128B  
PACKAGE STYLE 127B  
PACKAGE STYLE 128C  
PACKAGE STYLE 127C  
NON HERM ETIC EPOXY CO AT E D P AC K AG ES  
Microsemi  
Microwave Products  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  
Page 5  
Copyright 2006  
Rev: 2009-01-19  
GC9901 – GC9944  
Schottky Barrier Diodes  
®
TM  
For Mixers and Detectors  
RoHS Compliant  
PACKAGE STYLE 129A  
STYLE 174B  
.
PACKAGE STYLE 129B  
STYLE 174C  
PACKAGE STYLE 129C  
ORDERING INFORMATION  
Package style and configuration should be included  
when ordering 3 and 4 terminal products.  
Format: partnum – pkg – config  
For example:  
-
Order a ring quad in a 128C package as:  
GC9901-128C-QR1  
-
-
Order a bridge quad in a 128C package as:  
GC9901-128C-QB1  
Consult Factory for assistance.  
O T HE R P ACK AG E S T Y L E S AV AI L ABL E O N RE Q UE S T  
Microsemi  
Microwave Products  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  
Page 6  
Copyright 2006  
Rev: 2009-01-19  

GC9934-174C-QR1 相关器件

型号 制造商 描述 价格 文档
GC9934-QB1 MICROSEMI Mixer Diode, Medium Barrier, S Band, 5.5dB Noise Figure, Silicon 获取价格
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GC9934-QR1 MICROSEMI Mixer Diode, Medium Barrier, S Band, 5.5dB Noise Figure, Silicon, ROHS COMPLIANT, HERMETIC SEALED, CASE QR1, 4 PIN 获取价格
GC9934-QR1-127C MICROSEMI Mixer Diode, Medium Barrier, S Band, Silicon, 获取价格
GC9934-QR1-129C MICROSEMI Mixer Diode, Medium Barrier, S Band, Silicon, 获取价格
GC9934-S12-128A MICROSEMI Mixer Diode, Medium Barrier, S Band, Silicon, 获取价格
GC9934-TCA MICROSEMI Mixer Diode, Medium Barrier, S Band, 5.5dB Noise Figure, Silicon, ROHS COMPLIANT, HERMETIC SEALED, CASE TCC, 3 PIN 获取价格
GC9934-TCA-127B MICROSEMI Mixer Diode, Medium Barrier, S Band, Silicon, 获取价格
GC9934-TCA-129B MICROSEMI Mixer Diode, Medium Barrier, S Band, Silicon, 获取价格

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