GC9942-174B-TCA
更新时间:2024-09-18 15:20:50
品牌:MICROSEMI
描述:Mixer Diode, High Barrier, X Band, Silicon, ROHS COMPLIANT, CASE 174B, 3 PIN
GC9942-174B-TCA 概述
Mixer Diode, High Barrier, X Band, Silicon, ROHS COMPLIANT, CASE 174B, 3 PIN 微波混频二极管
GC9942-174B-TCA 规格参数
是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | O-CRDB-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.60 | 风险等级: | 5.63 |
配置: | COMMON ANODE, 2 ELEMENTS | 最大二极管电容: | 0.15 pF |
二极管元件材料: | SILICON | 二极管类型: | MIXER DIODE |
频带: | X BAND | JESD-30 代码: | O-CRDB-F3 |
JESD-609代码: | e4 | 元件数量: | 2 |
端子数量: | 3 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
峰值回流温度(摄氏度): | NOT SPECIFIED | 表面贴装: | YES |
技术: | SCHOTTKY | 端子面层: | GOLD |
端子形式: | FLAT | 端子位置: | RADIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 肖特基势垒类型: | HIGH BARRIER |
Base Number Matches: | 1 |
GC9942-174B-TCA 数据手册
通过下载GC9942-174B-TCA数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载GC9901 – GC9944
Schottky Barrier Diodes
®
TM
For Mixers and Detectors
RoHS Compliant
DESCRIPTION
KEY FEATURES
Schottky Barrier devices are currently available in single beamlead, dual “T”,
ring quad and bridge quad configurations. Devices are available in monolithic
form for hybrid applications as well as in hermetic or non-hermetic packages.
Monolithic devices are recommended for highest frequency, broadband
designs. The beamlead design eliminates the problems associated with wire
bonding very small junction devices thus improving reliability and
performance in MIC applications. Our in house epitaxy process capability
insures repeatability for lowest conversion loss through Ku Band. A broad
range of unique metallization schemes produce Microsemi’s complete line of
barrier heights. Diodes are currently available with barrier heights as low as
240 mV and up to 625 mV per junction. By optimizing epitaxy and
metallization, these devices achieve the lowest RS-CJ products resulting in
exceptional conversion loss performance. “High Rel” screening is available on
packaged devices per your requirements.
. Monolithic design for lowest
parasitics
. Low Conversion Loss
. Suitable for applications to 26.5
GHz
. Excellent Noise Figure
. Available in low, medium and high
barrier heights
. Can be supplied as monolithic
devices for hybrid applications or
as packaged devices
This series of devices meets RoHS requirements per EU Directive
2002/95/EC.
. RoHS Compliant1
1 These devices are supplied with Gold
plated terminations. Consult factory for
details.
APPLICATIONS
Schottky barrier diodes are suitable for a variety of circuit applications ranging
from single ended RF mixers to low level high speed switching. The
monolithic beamlead design minimizes parasitic inductance and capacitance
insuring repeatable performance through Ku band. Single junction devices
such as the style ‘S12’ are well suited for RF Mixers, level detectors, phase
detectors, modulators, etc. With junction capacitances as low as .06 pF,
Monolithic Quads are ideally suited for broadband double balanced mixer
designs through 26.5 GHz. The Ultra-Low Barrier devices (GC9900 Series)
are designed for mixers with low or starved Local Oscillator levels where
optimal conversion loss is a must. High barrier diodes, (GC9940 Series) are
designed for applications where high drive levels are available, such as,
Doppler mixers or motion detection. Schottky diodes are available in Ultra-
Low, Medium and High Drive levels to fit virtually any circuit requirement.
APPLICATIONS/BENEFITS
. Mixers
. Level Detectors
. Phase Detectors
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Maximum Power Handling
Storage Temperature
P
100
mW
ºC
TSTG
-65 to +175
Operating Temperature
TOP
-55 to +150
ºC
IMPORTANT:
For the most current data, consult our web site: www.microsemi.com
Specifications are subject to change. Consult factory for latest information.
These devices are ESD sensitive and must be handled use using ESD precautions.
Microsemi
Page 1
Copyright 2006
Rev: 2009-01-19
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GC9901 – GC9944
Schottky Barrier Diodes
®
TM
For Mixers and Detectors
RoHS Compliant
CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
.
ZIF(Ω)5
VB(V)2
CJ(pF)3
VF(mV)
RD(Ω)
NFSSB
Model1
Number
Barrier
Height
Freq
Range
4
(db)
IR=10μA
(Min)
@0V
@1 mA
@5 mA
(Max)
0.10
0.15
0.30
0.50
0.10
0.15
0.30
0.50
0.10
0.15
0.30
0.50
0.10
0.15
0.30
0.50
0.10
0.15
0.30
0.50
(Max)
340
310
300
280
360
350
340
330
470
460
440
420
550
540
530
510
660
640
630
610
(Max)
20
16
14
12
20
16
14
12
20
16
14
12
20
16
14
12
20
16
14
12
(Typ)
6.5
6
(Typ)
GC9901
GC9902
GC9903
GC9904
GC9911
GC9912
GC9913
GC9914
GC9921
GC9922
GC9923
GC9924
GC9931
GC9932
GC9933
GC9934
GC9941
GC9942
GC9943
GC9944
Ku-Ka
X
ULTRA
LOW
2.0
140
170
200
250
300
C
5.5
5.5
6.5
6
S
Ku-Ka
X
LOW
2.0
2.0
3.0
4.0
C
5.5
5.5
6.5
6
S
Ku-Ka
X
LOW-
MED
C
5.5
5.5
6.75
6.25
5.75
5.5
7
S
Ku-Ka
X
MEDIUM
HIGH
C
S
Ku-Ka
X
6.25
5.75
5.75
C
S
Notes
1. When ordering, specify appropriate package style.
IE: Order GC9901-S12 for single beamlead configuration.
2. V b measured at 10µA (N/A on ring quads).
3. 0 Volts, F=1 MHz (diagonal leads on quads).
4. L.O. = 0 dBm, Nif = 1.5 dB, F = 10 GHz
5. L.O. = 0 dBm
Microsemi
Page 2
Copyright 2006
Rev: 2009-01-19
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GC9901 – GC9944
Schottky Barrier Diodes
®
TM
For Mixers and Detectors
RoHS Compliant
VF CURVES
T Y P I C AL N F C U R V E S
Typical I-V Curves
100
10
2
3
1
4
1
1-GC9902
2-GC9922
3-GC9932
4-GC9942
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
VF(V)
T Y P I C AL I F I M P E D AN C E C U R V E S
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 3
Copyright 2006
Rev: 2009-01-19
GC9901 – GC9944
Schottky Barrier Diodes
®
TM
For Mixers and Detectors
RoHS Compliant
PACKAGE STYLE UC
PACKAGE STYLE S12
Order as GC9900-S12
PACKAGE STYLE TCC
Order as GC9900-UC
PACKAGE STYLE TSR
ORDER AS GC9900-TCC
Also available as TCA (‘T’ Common Anode)
ORDER AS GC9900-TSR
PACKAGE STYLE QR1
PACKAGE STYLE QB1
ORDER AS GC9900-QR1
ORDER AS GC9900-QB1
DISCRETE AN D MONOLITHIC PAC K AG E OPTIONS
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 4
Copyright 2006
Rev: 2009-01-19
GC9901 – GC9944
Schottky Barrier Diodes
®
TM
For Mixers and Detectors
RoHS Compliant
PACKAGE STYLE 127A
PACKAGE STYLE 128A
PACKAGE STYLE 128B
PACKAGE STYLE 127B
PACKAGE STYLE 128C
PACKAGE STYLE 127C
NON HERM ETIC EPOXY CO AT E D P AC K AG ES
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 5
Copyright 2006
Rev: 2009-01-19
GC9901 – GC9944
Schottky Barrier Diodes
®
TM
For Mixers and Detectors
RoHS Compliant
PACKAGE STYLE 129A
STYLE 174B
.
PACKAGE STYLE 129B
STYLE 174C
PACKAGE STYLE 129C
ORDERING INFORMATION
Package style and configuration should be included
when ordering 3 and 4 terminal products.
Format: partnum – pkg – config
For example:
-
Order a ring quad in a 128C package as:
GC9901-128C-QR1
-
-
Order a bridge quad in a 128C package as:
GC9901-128C-QB1
Consult Factory for assistance.
O T HE R P ACK AG E S T Y L E S AV AI L ABL E O N RE Q UE S T
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 6
Copyright 2006
Rev: 2009-01-19
GC9942-174B-TCA 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
GC9942-174B-TCC | MICROSEMI | Mixer Diode, High Barrier, X Band, Silicon, ROHS COMPLIANT, CASE 174B, 3 PIN | 获取价格 | |
GC9942-174B-TSR | MICROSEMI | Mixer Diode, High Barrier, X Band, Silicon, ROHS COMPLIANT, CASE 174B, 3 PIN | 获取价格 | |
GC9942-174C-QB1 | MICROSEMI | Mixer Diode, High Barrier, X Band, Silicon, ROHS COMPLIANT, CASE 174C, 4 PIN | 获取价格 | |
GC9942-174C-QR1 | MICROSEMI | Mixer Diode, High Barrier, X Band, Silicon, ROHS COMPLIANT, CASE 174C, 4 PIN | 获取价格 | |
GC9942-QB1 | MICROSEMI | Mixer Diode, High Barrier, X Band, 6.25dB Noise Figure, Silicon, ROHS COMPLIANT, HERMETIC SEALED, CASE QB1, 4 PIN | 获取价格 | |
GC9942-QB1-127C | MICROSEMI | Mixer Diode, High Barrier, X Band, Silicon, | 获取价格 | |
GC9942-QB1-128C | MICROSEMI | Mixer Diode, High Barrier, X Band, Silicon, | 获取价格 | |
GC9942-QR1 | MICROSEMI | Mixer Diode, High Barrier, X Band, 6.25dB Noise Figure, Silicon, ROHS COMPLIANT, HERMETIC SEALED, CASE QR1, 4 PIN | 获取价格 | |
GC9942-QR1-128C | MICROSEMI | Mixer Diode, High Barrier, X Band, Silicon, | 获取价格 | |
GC9942-S12 | MICROSEMI | Mixer Diode, High Barrier, X Band, 6.25dB Noise Figure, Silicon, ROHS COMPLIANT, HERMETIC SEALED, CASE S12, 2 PIN | 获取价格 |
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