JAN1N6663 [MICROSEMI]

Rectifier Diode, 1 Element, 0.5A, Silicon, DO-35,;
JAN1N6663
型号: JAN1N6663
厂家: Microsemi    Microsemi
描述:

Rectifier Diode, 1 Element, 0.5A, Silicon, DO-35,

二极管
文件: 总2页 (文件大小:100K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N6661 thru 1N6663  
VOIDLESS-HERMETICALLY-SEALED  
STANDARD RECOVERY GLASS  
RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “standard recovery” rectifier diode is military qualified to MIL-PRF-19500/587 and  
is ideal for high-reliability applications where a failure cannot be tolerated. These  
industry-recognized 500 mA rated rectifiers for working peak reverse voltages from 225  
to 600 volts are hermetically sealed with void-less-glass construction using an internal  
“Category I” metallurgical bond. The surface mount MELF package configurations are  
also available by adding a “US” suffix (see separate data sheet for 1N6661US thru  
1N6663US). Microsemi also offers numerous other rectifier products to meet higher  
and lower current ratings with various recovery time speed requirements including fast  
and ultrafast device types in both through-hole and surface mount packages.  
DO-35  
(Package C)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Popular JEDEC registered 1N6661 thru 1N6663 series  
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
Standard recovery 0.5 Amp rectifiers 225 to 600 V  
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
Forward surge current capability  
Extremely robust construction  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 225 to 600 Volts.  
JAN, JANTX, and JANTXV available per MIL-PRF-  
19500/587  
Low thermal resistance in small DO-35 package  
Inherently radiation hard as described in Microsemi  
MicroNote 050  
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix (also see  
1N6661US thru 1N6663US)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Junction & Storage Temperature: -65oC to +175oC  
CASE: Hermetically sealed void-less hard glass  
with Tungsten slugs  
Thermal Resistance: 160oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
TERMINATIONS: Axial leads are copper clad steel  
with Tin/Lead (Sn/Pb) finish  
Average Rectified Forward Current (IO): 0.5 Amps @  
TA = 25ºC and 0.150 Amps at 150ºC  
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
Forward Surge Current: 5 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 150 mg (approx)  
See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
WORKING  
PEAK  
MINIMUM  
BREAKDOWN  
VOLTAGE  
AVERAGE  
RECTIFIED  
CURRENT  
(NOTE 2)  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
SURGE  
CURRENT  
(NOTE1)  
MAXIMUM REVERSE  
CURRENT  
REVERSE  
VOLTAGE  
TYPE  
V
@ 0.4 A  
F
V
V
@ 100μA  
VOLTS  
I
I
@ V  
μA  
I
(PULSED)  
VOLTS  
RWM  
BR  
O
R
RWM  
FSM  
VOLTS  
AMPS  
AMPS  
25oC  
150oC  
0.15  
0.15  
0.15  
25oC  
150oC  
300  
300  
300  
1N6661  
1N6662  
1N6663  
225  
400  
600  
270  
480  
720  
0.5  
0.5  
0.5  
1.0  
1.0  
1.0  
0.05  
0.05  
0.05  
5
5
5
NOTE 1: TA = 25oC, 10 surges of 8.3 ms @ 1 minute intervals  
NOTE 2: Linearly derate at 2.8 mA/ºC between TA=25ºC and 150ºC and 6.0 mA/ºC between TA=150ºC and 175ºC  
Copyright © 2008  
1-03-2008  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1N6661 thru 1N6663  
VOIDLESS-HERMETICALLY-SEALED  
STANDARD RECOVERY GLASS  
RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
SYMBOLS & DEFINITIONS  
Symbol  
VBR  
Definition  
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.  
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range.  
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.  
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.  
VRWM  
VF  
IR  
GRAPHS  
PACKAGE DIMENSIONS  
Copyright © 2008  
1-03-2008  
Microsemi  
Page 2  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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