JAN2N3055 [MICROSEMI]
NPN POWER SILICON TRANSISTOR; NPN功率硅晶体管
| 型号： | JAN2N3055 |
| 厂家： | 
Microsemi |
| 描述： | NPN POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 407
Devices
Qualified Level
JAN
JANTX
2N3055
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Symbol
VCEO
VCBO
VEBO
IB
Value
70
Units
Vdc
100
7.0
Vdc
Vdc
7.0
Adc
Collector Current
15
6.0
117
Adc
W
W
0C
IC
Total Power Dissipation
@ TA = 250C (1)
@ TC = 250C (2)
PT
Operating & Storage Temperature Range
-65 to +200
Top,
T
stg
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
TO-3*
(TO-204AA)
Symbol
Max.
Unit
0C/W
1.5
R
qJC
1) Derate linearly @ 34.2 mW/0C for TA > +250C
2) Derate linearly @ 668 mW/0C for TC > +250C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, RBE = 100W
Collector-Emitter Breakdown Voltage
VBE = -1.5 Vdc, IC = 200 mAdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
Collector-Emitter Cutoff Current
VBE = -1.5 Vdc; VCE = 100 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
70
80
90
Vdc
Vdc
V(BR)
V(BR)
V(BR)
CEO
CER
CEX
Vdc
1.0
1.0
1.0
mAdc
mAdc
mAdc
ICEO
ICEX
IEBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3055 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 4.0 Vdc
40
20
5.0
60
hFE
IC = 4.0 Adc, VCE = 4.0 Vdc
IC = 10 Adc, VCE = 4.0 Vdc
Collector-Emitter Saturation Voltage
IC = 4.0 Adc, IB = 0.4 Adc
IC = 10 Adc, IB = 3.3 Adc
Base-Emitter Saturation Voltage
IC = 4.0 Adc, VCE = 4.0 Vdc
0.75
2.0
Vdc
Vdc
VCE(sat)
1.4
VBE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
8.0
40
½hfe½
IC = 4.0 Adc, VCE = 4.0 Vdc, f = 100 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
700
pF
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 4.0 Adc; IB1= 0.4 Adc
Turn-Off Time
ton
ms
ms
6.0
12
toff
VCC = 30 Vdc; IC = 4.0 Adc; IB1 = -IB2 = 0.4 Adc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 7.8 Vdc, IC = 15 Adc
Test 2
VCE = 70 Vdc, IC = 1.67 Adc
Switching Tests
TA = +250C; duty cycle £ 10%; RS £ 0.1 W
Test 1
tP = 5.0 ms; RBB1 = 2.0 W; VBB ³ 10 Vdc; RBB2 = 100 W; VCC ³ 10 Vdc; VBB2 = 1.5 Vdc; IC = 15 Adc
1
Test 2
tP = 20 ms; RBB1 = 30 W; VBB1 ³ 10 Vdc; RBB2 = 100 W; VCC ³ 10 Vdc; VBB2 = 1.5 Vdc; IC = 3.8 Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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