JAN2N6299 [MICROSEMI]

PNP DARLINGTON POWER SILICON TRANSISTOR; PNP达林顿功率硅晶体管


型号：	JAN2N6299
厂家：	Microsemi
描述：	PNP DARLINGTON POWER SILICON TRANSISTOR PNP达林顿功率硅晶体管晶体晶体管局域网
文件：	总2页 (文件大小：59K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TECHNICAL DATA

PNP DARLINGTON POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 540

Devices

Qualified Level

JAN

2N6298

2N6299

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol 2N6298 2N6299 Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

Vdc

V_CEO

V_CBO

V_EBO

I_B

Vdc

5.0

120

8.0

Vdc

mAdc

Adc

Collector Current

I_C

Total Power Dissipation @ T_C= 0⁰C ⁽¹⁾

⁰C

P_T

T_C= 100⁰C

Operating & Storage Junction Temperature Range

-65 to +175

T_OP_,T_STG

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

⁰C/W

TO-66* (TO-213AA)

Thermal Resistance, Junction-to-Case

1) Derate linearly 0.428 W/⁰C above T_C> 0⁰C

2.33

qJC

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 100 mAdc

Symbol

Min.

Max.

Unit

Vdc

2N6298

2N6299

V_(BR)

CEO

Collector-Emitter Cutoff Current

V_CE= 30 Vdc

V_CE= 40 Vdc

0.5

mAdc

2N6298

2N6299

I_CEO

Collector-Emitter Cutoff Current

V_CE= 60 Vdc, V_BE= 1.5 Vdc

V_CE= 80 Vdc, V_BE= 1.5 Vdc

Emitter-Base Cutoff Current

V_EB= 5.0 Vdc

0.5

mAdc

2N6298

2N6299

I_CEX

2.0

I_EBO

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

2N6298, 2N6299 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS ⁽²⁾

Symbol

Min.

Max.

Unit

Forward-Current Transfer Ratio

I_C= 1.0 Adc, V_CE= 3.0 Vdc

I_C= 4.0 Adc, V_CE= 3.0 Vdc

I_C= 8.0 Adc, V_CE= 3.0 Vdc

Collector-Emitter Saturation Voltage

I_C= 4.0 Adc, I_B= 16 mAdc

I_C= 8.0 Adc, I_B= 80 mAdc

Base-Emitter Saturation Voltage

I_C= 8.0 Adc, I_B= 80 mAdc

Base-Emitter Voltage

500

750

100

18,000

h_FE

2.0

3.0

Vdc

V_CE(sat)

4.0

2.8

Vdc

V_BE(sat)

V_BE(on)

I_C= 4.0 Adc, V_CE= 3.0 Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

I_C= 3.0 Adc, V_CE= 3.0 Vdc, f = 1.0 MHz

Small-Signal Short-Circuit Forward Current Transfer Ratio

I_C= 3.0 Adc, V_CE= 3.0 Vdc, f = 1.0 kHz

Output Capacitance

350

200

½h_fe½

300

h_fe

V_CB= 10 Vdc, I_E= 0, 100 kHz £ f £ 1.0 MHz

C_obo

SWITCHING CHARACTERISTICS

Turn-On Time

^ton

2.0

8.0

V_CC= 30 Vdc; I_C= 4.0 Adc; I_B1= 16 mAdc

Turn-Off Time

V_CC= 30 Vdc; I_C= 4.0 Adc; I_B1= 16 mAdc

^toff

SAFE OPERATING AREA

DC Tests

T_C= +25⁰C, 1 Cycle, t = 1.0 s

Test 1

V_CE= 8.0 Vdc, I_C= 8.0 Adc

Test 2

V_CE= 20 Vdc, I_C= 2.0 Adc

Test 3

V_CE= 60 Vdc, I_C= 100 mAdc

V_CE= 80 Vdc, I_C= 100 mAdc

2N6298

2N6299

(2) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

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