JANKCA1N5819 [MICROSEMI]
Rectifier Diode, Schottky, 1 Element, 1A, 45V V(RRM), Silicon, DIE-2;
| 型号： | JANKCA1N5819 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, 45V V(RRM), Silicon, DIE-2 二极管 |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5819
and
• 1N5819-1 AND 1N6761-1AVAILABLE IN JAN,JANTX, JANTXV,
AND JANS PER MIL-PRF-19500/586
DSB5817 and DSB5818
and
1N6759 thru 1N6761
and
• 1 AMP SCHOTTKY BARRIER RECTIFIERS
• HERMETICALLY SEALED
• METALLURGICALLY BONDED
DSB1A20 thru DSB1A100
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Average Rectified Forward Current: 1.0 AMP @T +55°C, L = 3/8”
L
Derating: 14 mA / °C above T
+55°C, L = 3/8”
L =
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
WORKING PEAK
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
CDI
TYPE
REVERSE
VOLTAGE
MAXIMUM FORWARD VOLTAGE
NUMBER
V
RWM
V
@0.1A
V
@1.0A
V
@3.1A
I
@25°C
mA
I
R
@100°C
mA
F
F
F
R
VOLTS
20
VOLTS
0.36
VOLTS
0.60
VOLTS
0.9
DSB5817
DSB5818
1N5819
0.10
0.10
0.10
0.05
5.0
FIGURE 1
30
0.36
0.60
0.9
5.0
40
0.36
0.60
0.9
5.0
DESIGN DATA
J,JX,JV & JS
5819-1
45
0.34
0.49
0.8
5.0
1N6759
1N6760
1N6761
60
80
0.38
0.38
0.38
0.38
0.69
0.69
0.69
0.69
NA
NA
NA
NA
0.10
0.10
0.10
0.10
6.0
6.0
CASE: Hermetically sealed, DO – 41
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
100
100
6.0
J,JX,JV & JS
6761-1
12.0
THERMAL RESISTANCE: (R
): 70
OJEC
°C/W maximum at L = .375 inch
DSB1A20
DSB1A30
DSB1A40
DSB1A50
DSB1A60
DSB1A80
DSB1A100
20
30
0.36
0.36
0.36
0.36
0.38
0.38
0.38
0.60
0.60
0.60
0.60
0.69
0.69
0.69
0.9
0.9
0.9
0.9
NA
NA
NA
0.10
0.10
0.10
0.10
0.10
0.10
0.10
5.0
5.0
THERMAL IMPEDANCE: (Z
°C/W maximum
): 12
OJX
40
5.0
50
5.0
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any
60
12.0
12.0
12.0
80
100
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
65
1N5819 and DSB5817 and DSB5818
and
1N6759 thru 1N6761
and
DSB1A20 thru DSB1A100
TYPICAL REVERSE LEAKAGE CURRENT AT RATED PIV (PULSED)
10.0
1.0
1N5819
0.1
DSB5818
DSB5817
0.01
0.001
+25
+50
+75
+100
+125
T
, JUNCTION TEMPERATURE (°C)
J
FIGURE 1
TYPICAL FORWARD VOLTAGE
100.0
10.0
1.0
0.1
0.01
0.1 0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V , FORWARD VOLTAGE, INSTANTANEOUS (VOLTS)
F
FIGURE 2
66
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