JANS2N3501 [MICROSEMI]
NPN SILICON TRANSISTOR; NPN硅晶体管
| 型号： | JANS2N3501 |
| 厂家： | 
Microsemi |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 366
Devices
Qualified Level
JAN
2N3498
2N3499
2N3500
2N3501
JANTX
2N3498L
2N3499L
2N3500L
2N3501L
JANTXV
JANS
MAXIMUM RATINGS
2N3498* 2N3500*
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol 2N3499* 2N3501*
Unit
Vdc
100
100
6.0
150
150
6.0
VCEO
VCBO
VEBO
IC
Vdc
Vdc
TO-5*
500
300
mAdc
@ TA = 250C (1)
@ TC = 250C (2)
1.0
5.0
W
W
0C
2N3498L, 2N3499L
2N3500L, 2N3501L
Total Power Dissipation
PT
Operating & Storage Junction Temp. Range
-55 to +200
TJ, T
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance:
Junction-to-Case
35
R
qJC
0C/W
TO-39* (TO-205AD)
2N3498, 2N3499
Junction-to-Ambient
175
R
qJA
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 W/0C for TA > 250C
2N3500, 2N3501
2) Derate linearly 28.6 W/0C for TC > 250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
100
150
Vdc
2N3498, 2N3499
2N3500, 2N3501
V(BR)
CEO
Collector-Base Cutoff Current
VCB = 50 Vdc
VCB = 75 Vdc
VCB = 100 Vdc
VCB = 150 Vdc
50
50
10
10
hAdc
hAdc
mAdc
mAdc
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
ICBO
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
VEB = 6.0 Vdc
25
10
hAdc
mAdc
IEBO
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N3498, L, 2N3499, L, 2N3500, L, 2N3501, L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
20
35
25
50
35
75
40
100
15
20
15
20
IC = 0.1 mAdc, VCE = 10 Vdc
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3500
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
hFE
120
300
2N3501
2N3498
2N3499
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 300 mAdc, IB = 30 mAdc
IC = 150 mAdc, IB = 15 mAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 300 mAdc, IB = 30 mAdc
IC = 150 mAdc, IB = 15 mAdc
0.2
0.6
0.4
All Types
2N3498, 2N349
2N3500, 2N3501
Vdc
Vdc
VCE(sat)
0.8
1.4
1.2
All Types
2N3498, 2N3499
2N3500, 2N3501
VBE(sat)
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz
Output Capacitance
½hfe½
Cobo
1.5
8.0
10
8.0
pF
pF
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
2N3498, 2N3499
2N3500, 2N3501
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz £ f £ 1.0 MHz
80
Cibo
SWITCHING CHARACTERISTICS
Turn-On Time
VEB = 5 Vdc; IC = 150 mAdc; IB1 = 15 mAdc
Turn-Off Time
ton
hs
hs
115
toff
1150
IC = 150 mAdc; IB1 = IB2 = -15 mAdc
SAFE OPERATING AREA
DC Tests
TC = +250C, tr ³ 10 hs; 1 Cycle, t = 1.0 s
Test 1
VCE = 10 Vdc, IC = 500 mAdc
VCE = 16.67 Vdc, IC = 300 mAdc
Test 2
2N3498, 2N3499
2N3500, 2N3501
VCE = 50 Vdc, IC = 100 mAdc
Test 3
VCE = 80 Vdc, IC = 40 mAdc
Clamped Switching
TA = +250C
All Types
All Types
Test 1
IB = 85 mAdc, IC = 500 mAdc
IB = 50 mAdc, IC = 300 mAdc
2N3498, 2N3499
2N3500, 2N3501
(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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