JANS2N3867S [MICROSEMI]

PNP SILICON LOW POWER TRANSISTOR; PNP硅低功率晶体管
JANS2N3867S
型号: JANS2N3867S
厂家: Microsemi    Microsemi
描述:

PNP SILICON LOW POWER TRANSISTOR
PNP硅低功率晶体管

晶体 晶体管
文件: 总4页 (文件大小:121K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
PNP SILICON LOW POWER TRANSISTOR  
Qualified per MIL-PRF-19500/350  
DEVICES  
LEVELS  
JAN  
JANTX  
JANTXV  
JANS  
2N3867  
2N3868  
2N3867S  
2N3868S  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Base Voltage  
Symbol 2N3867 2N3868  
Unit  
Vdc  
VCBO  
VCEO  
VEBO  
IC  
40  
40  
60  
60  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Vdc  
4.0  
3.0  
1.0  
Vdc  
mAdc  
W/°C  
°C  
Total Power Dissipation  
@ TA = +25°C (1)  
PT  
Operating & Storage Junction Temperature Range  
TJ, Tstg  
-65 to +200  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
TO-5 *  
2N3867, 2N3868  
Symbol  
Max.  
Unit  
Thermal Resistance, Junction-to-Ambient  
175  
°C/mW  
RθJA  
Note: * Electrical characteristics for “S” suffix devices are identical to the “non S”  
corresponding devices.  
1/ Derate linearly 5.71mW/°C for TA > +25°C  
2/ Derate linearly 57.1mW/°C for TC > +25°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Collector-Emitter Breakdown Current  
Symbol  
Min.  
Max.  
Unit  
V(BR)CEO  
Vdc  
2N3867, S  
2N3868, S  
40  
60  
IC = 10μAdc  
TO-39 * (TP-205AD)  
2N3867S, 2N3868S  
Collector-Base Cutoff Current  
VCB = 40Vdc  
2N3867, S  
2N3868, S  
ICBO  
IEBO  
100  
100  
µAdc  
µAdc  
V
CB = 60Vdc  
Emitter-Base Cutoff Current  
VEB = 4.0Vdc  
Collector-Emitter Cutoff Current  
VCE = 40Vdc  
2N3867, S  
2N3868, S  
2N3867, S  
2N3868, S  
1.0  
1.0  
50  
V
CE = 60Vdc  
ICEX  
µAdc  
VCE = 40Vdc, TA = +150°C  
VCE = 60Vdc, TA = +150°C  
50  
T4-LDS-0170 Rev. 1 (101121)  
Page 1 of 4  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)  
Parameters / Test Conditions  
ON CHARACTERTICS (2)  
Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
IC = 500mAdc, VCE = 1.0Vdc  
2N3867, S  
2N3868, S  
50  
35  
IC = 1.5Adc, VCE = 2.0Vdc  
2N3867, S  
2N3868, S  
40  
30  
200  
150  
IC = 2.5Adc, VCE = 3.0Vdc  
2N3867, S  
2N3868, S  
25  
20  
hFE  
IC = 3.0Adc, VCE = 5.0Vdc  
2N3867, S  
2N3868, S  
20  
20  
IC = 500mAdc, VCE = 1.0Vdc, TA = -55°C  
2N3867, S  
2N3868, S  
25  
17  
Collector-Emitter Saturation Voltage  
IC = 500mAdc, IB = 50mAdc  
IC = 1.5Adc, IB = 150mAdc  
IC = 2.5Adc, IB = 250mAdc  
0.5  
0.75  
1.5  
VCE(sat)  
Vdc  
Vdc  
Base-Emitter Saturation Voltage  
IC = 500mA, IB = 50mAdc  
IC = 1.5A, IB = 150mAdc  
1.0  
2N3867, S  
2N3868, S  
0.9  
0.85  
1.4  
1.4  
2.0  
VBE(sat)  
IC = 2.5A, IB = 250mAdc  
DYNAMIC CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Magnitude of Common Emitter Small-Signal Short Circuit  
Forward Current Transfer Ratio  
|hfe|  
3
12  
k  
IC = 100mAdc, VCE = 5.0Vdc, f = 20MHz  
Output Capacitance  
120  
800  
Cobo  
pF  
pF  
VCB = 10Vdc, IE = 0, 100 kHz f 1.0MHz  
Iutput Capacitance  
Cibo  
VEB = 3.0Vdc, IC = 0, 100 kHz f 1.0MHz  
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%  
T4-LDS-0170 Rev. 1 (101121)  
Page 2 of 4  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
SWITCHING CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Delay Time  
Rise Time  
VCC = -30dc, VEB = 0  
IC = 1.5Adc, IB1 = 150mAdc  
td  
tr  
35  
65  
nS  
Storage Time  
Fall Time  
VCC = -30dc, VEB = 0  
IC = 1.5Adc, IB1 = IB2 = 150mAdc  
ts  
f
500  
100  
nS  
t
Turn-On Time  
VCC = 30, IC = 1.5Adc, IB = 150mA  
ton  
100  
600  
nS  
nS  
Turn-Off Time  
toff  
V
CC = 30, IC = 1.5Adc, IB = 150mA  
SAFE OPERATING AREA  
DC Test  
TC = 25°C, 1 cycle, t = 1.0s  
Test 1  
V
CE = 3.33Vdc, IC = 3.0Adc  
Test 2  
V
V
CE = 40Vdc, IC = 160mAdc  
CE = 60Vdc, IC = 80mAdc  
2N3867,  
2N3868, S  
T4-LDS-0170 Rev. 1 (101121)  
Page 3 of 4  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
PACKAGE DIMENSIONS  
Dimensions  
Inches Millimeters  
Symbol  
Note  
5, 6  
Min Max Min  
.305 .335 7.75  
.240 .260 6.10  
.335 .370 8.51  
Max  
8.51  
6.60  
9.40  
CD  
CH  
HD  
LC  
LD  
LL  
LU  
L1  
TO-5, 39  
4, 5  
7
8,9  
.200 TP  
5.08 TP  
.016 .019 0.41  
0.48  
See note 8, 14  
.016 .019 0.41  
.050  
0.48  
1.27  
8,9  
8,9  
8,9  
7
L2  
P
.250  
.100  
6.35  
2.54  
Q
.030  
0.76  
1.14  
0.86  
0.25  
5
3,4  
3
10  
7
TL  
TW  
R
.029 .045 0.74  
.028 .034 0.71  
.010  
α
45° TP  
45° TP  
1, 2, 10, 12, 13, 14  
NOTES:  
1. Dimensions are in inches.  
2. Millimeters are given for general information only.  
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).  
4. Dimension TL measured from maximum HD.  
5. Body contour optional within zone defined by HD, CD, and Q.  
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.  
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18  
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be  
measured by direct methods or by gauging procedure.  
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is  
uncontrolled in and beyond LL minimum.  
9. All three leads.  
10. The collector shall be internally connected to the case.  
11. Dimension r (radius) applies to both inside corners of tab.  
12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.  
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.  
14. For non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-  
suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max.  
FIGURE 1. Physical dimensions (similar to TO-5, TO-39)  
T4-LDS-0170 Rev. 1 (101121)  
Page 4 of 4  

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