JANSL2N3700UB/TR [MICROSEMI]
Small Signal Bipolar Transistor,;
| 型号： | JANSL2N3700UB/TR |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, |
| 文件： | 总7页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JANS_2N3700UB
Qualified Levels:
JANSM, JANSD,
JANSP, JANSL, and
JANSR
RADIATION HARDENED LOW POWER
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
DESCRIPTION
This NPN ceramic surface mount device is RAD hard qualified for high-reliability applications.
Microsemi also offers numerous other products to meet higher and lower power voltage
regulation applications.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
•
Surface mount equivalent to JEDEC registered 2N3700.
RHA level JAN qualifications per MIL-PRF-19500/391 (see part nomenclature for all options).
UB Package
Also available in:
TO-18 (TO-206AA)
(leaded)
APPLICATIONS / BENEFITS
JANS_2N3700
•
•
•
•
Ceramic UB surface mount package.
Lightweight.
TO-39 (TO-205AD)
(leaded)
Low power.
Military and other high-reliability applications.
JANS_2N3019, 2N3019S
TO-46 (TO-206AB)
(leaded)
JANS_2N3057A
MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Impedance Junction-to-Ambient
Thermal Impedance Junction-to-Case
Collector-Emitter Voltage
Symbol
TJ and TSTG
RӨJA
Value
-65 to +200
325
Unit
oC
oC/W
oC/W
V
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
RӨJSP
VCEO
90
80
Collector-Base Voltage
VCBO
140
V
Fax: (978) 689-0803
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
1.0
A
MSC – Ireland
Total Power Dissipation:
@ TA = +25 oC (1)
PD
0.5
W
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Notes: 1. Derate linearly 6.6 mW/°C for TA ≥ +25 °C.
Website:
www.microsemi.com
T4-LDS-0263-1, Rev. 1 (120784)
©2012 Microsemi Corporation
Page 1 of 7
JANS_2N3700UB
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic.
TERMINALS: Gold plating over nickel under plate.
MARKING: Part number, date code, manufacturer’s ID, and serial number.
TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
WEIGHT: < 0.04 Grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JANSM
2N3700
UB
Reliability Level
JANSM = 3K Rads (Si)
JANSD = 10K Rads (Si)
JANSP = 30K Rads (Si)
JANSL = 50K Rads (Si)
JANSR = 100K Rads (Si)
Surface Mount package
JEDEC type number
SYMBOLS & DEFINITIONS
Definition
Symbol
frequency
f
Base current (dc)
IB
Emitter current (dc)
IE
TA
Ambient temperature
Case temperature
TC
VCB
VCE
VEB
Collector to base voltage (dc)
Collector to emitter voltage (dc)
Emitter to base voltage (dc)
T4-LDS-0263-1, Rev. 1 (120784)
©2012 Microsemi Corporation
Page 2 of 7
JANS_2N3700UB
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Current
IC = 30 mA
V(BR)CEO
ICBO
IEBO1
ICES
80
V
Collector-Base Cutoff Current
VCB = 140 V
10
10
10
10
µA
µA
ηA
ηA
Emitter-Base Cutoff Current
VEB = 7 V
Collector-Emitter Cutoff Current
VCE = 90 V
Emitter-Base Cutoff Current
VEB = 5.0 V
ON CHARACTERISTICS (1)
IEBO2
Forward-Current Transfer Ratio
IC = 150 mA, VCE = 10 V
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1.0 A, VCE = 10 V
100
50
90
50
15
300
300
hFE
300
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.2
0.5
VCE(sat)
V
V
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
VBE(sat)
1.1
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz
Magnitude of Small-Signal Short-Circuit Forward Current
Transfer Ratio
hfe
80
400
|hfe|
5.0
20
IC = 50 mA, VCE = 10 V, f = 20 MHz
Output Capacitance
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
Cobo
Cibo
12
60
pF
pF
VEB = 0.5 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
T4-LDS-0263-1, Rev. 1 (120784)
©2012 Microsemi Corporation
Page 3 of 7
JANS_2N3700UB
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053)
DC Tests
TC = 25 °C, 1 cycle, t = 10 ms
Test 1
VCE = 10 V
2N3700UB
IC = 180 mA
Test 2
2N3700UB
VCE = 40 V
IC = 45 mA
Test 3
VCE = 80 V
2N3700UB
IC = 22.5 mA
VCE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area
T4-LDS-0263-1, Rev. 1 (120784)
©2012 Microsemi Corporation
Page 4 of 7
JANS_2N3700UB
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
POST RADIATION ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector to Base Cutoff Current
VCB = 140 V
ICBO
20
µA
Emitter to Base Cutoff Current
VEB = 7 V
IEBO
V(BR)CEO
ICES
20
µA
V
Collector to Emitter Breakdown Voltage
IC = 30 mA
80
Collector-Emitter Cutoff Current
VCE = 90 V
20
20
ηA
ηA
Emitter-Base Cutoff Current
VEB = 5.0 V
Forward-Current Transfer Ratio (2)
IC = 150 mA, VCE = 10 V
IEBO
[50]
[25]
[45]
[25]
[7.5]
300
300
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
[hFE]
300
IC = 1 A, VCE = 10 V
Collector-Emitter Saturation Voltage
0.23
0.58
VCE(sat)
V
V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
VBE(sat)
1.27
(2) See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and post-
radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed
the pre-radiation minimum hFE that it is based upon.
T4-LDS-0263-1, Rev. 1 (120784)
©2012 Microsemi Corporation
Page 5 of 7
JANS_2N3700UB
GRAPHS
TA (oC) Ambient
FIGURE 1
Temperature-Power Derating (RӨJA
)
TSP (oC) Solder Pad
FIGURE 2
Temperature-Power Derating (RӨJSP
)
T4-LDS-0263-1, Rev. 1 (120784)
©2012 Microsemi Corporation
Page 6 of 7
JANS_2N3700UB
PACKAGE DIMENSIONS
Lid
Dimensions
Dimensions
Inch Millimeters
Symbol
Note Symbol
Note
Inch
Millimeters
Min
.046
.115
.085
Max
.056
.128
.108
.128
.108
.038
.035
Min
Max
1.42
3.25
2.74
3.25
2.74
0.96
0.89
Min
.036
.071
.016
Max
.040
.079
.024
.008
.012
.022
Min
Max
1.02
2.01
0.61
.203
.305
.559
BH
BL
BW
CL
CW
LL1
LL2
LS1
LS2
LW
r
r1
r2
1.17
2.92
2.16
.091
1.81
0.41
.022
.017
0.56
0.43
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0263-1, Rev. 1 (120784)
©2012 Microsemi Corporation
Page 7 of 7
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