JANTX1N3595A-1_技术文档

INCH-POUND

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 14 January 2014.

MIL-PRF-19500/241N

14 November 2013

SUPERSEDING

MIL-PRF-19500/241M

25 January 2010

PERFORMANCE SPECIFICATION SHEET

*

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED

FORWARD VOLTAGE, TYPES 1N3595-1, 1N3595UB, 1N3595UBCA, 1N3595UBD, 1N3595UBCC, 1N3595UB2,

1N3595UB2R, 1N3595US, 1N3595UR-1, 1N3595A-1,

1N3595AUS, AND 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein

shall consist of this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, controlled forward voltage diodes.

Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of

product assurance are provided for die.

1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (UR), figure 3 (US), figure 4 (UB), figure 5 (UB2), figure 6

(die), and figure 7 (die).

1.3 Maximum ratings. T = +25°C, unless otherwise specified.

A

V

I

R

θJL

R

θJEC

R

T and T

J STG

RWM

O

FSM

θJA(PCB)

(1) (2)

t = 1 s

p

L = .375 inch

(9.53 mm)

L = 0

t = 1 µs

p

V(pk)

125

mA dc

150

mA (pk)

500

A (pk)

4

°C/W

°C

250

UR

UB, UB2 100

US 40

100

275

-65 to +175

(1) For temperature-current derating curves, see figure 8.

(2) T = +75°C for both axial and metal electrode leadless face diodes (MELF) (UR, US) on printed circuit

A

board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads for (UR, US) =

.061 inch (1.55 mm) x.105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch

(0.76 mm) x 1 inch (25.4 mm) long, lead length L ≤ .187 inch (≤ 4.75 mm); R

with a defined PCB

θJA

thermal resistance condition included, is measured at I = 150 mA dc.

O

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at https://assist.dla.mil.

AMSC N/A

FSC 5961

MIL-PRF-19500/241N

1.4 Primary electrical characteristics at T = +25°C, unless otherwise indicated and apply to all parts.

A

Limits

V

F6

F1

F2

F3

F4

F5

I

= 200 mA dc

I

= 100 mA dc

I

= 50 mA dc

I

= 10 mA dc

I

= 5 mA dc

I = 1 mA dc

F

Min

Max

.83 V dc

1.00 V dc

.79 V dc

.92 V dc

.74 V dc

.88 V dc

.65 V dc

.80 V dc

.60 V dc

.765 V dc

.52 V dc

.70 V dc

Types

I

C

t

rr

R1

R2

V

= 0 V dc

V

= 125 V dc

V

= 125 V dc

= +150°C

Max

3 µA dc

R

I

F

= 10 mA dc

R

f = 1 MHz

V

R

= 35 V dc

T

A

Max

1.0 nA dc

2.0 nA dc

Max

8.0 pF

Max

3 µs

1N3595-1

1N3595A-1

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 Test Methods for Semiconductor Devices.

-

Semiconductor Devices, General Specification for.

-

* (Copies of these documents are available online at http://quicksearch.dla.mil or https://assist.dla.mil or from the

Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML)

before contract award (see 4.2 and 6.3).

2

MIL-PRF-19500/241N

DO-35

Dimensions

Inches Millimeters

Ltr

Min

.056

.140

.018

1.000

Max

.075

.180

.022

1.500

Min

1.42

3.56

0.46

25.40

Max

1.91

4.57

0.56

38.10

BD

BL

LD

LL

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

FIGURE 1. Physical dimensions - 1N3595-1, 1N3595A-1 (DO-35).

3

MIL-PRF-19500/241N

UR

DO-213AA

Dimensions

Inches Millimeters

Min Max

Symbol

Min

Max

.067

.146

.022

BD

BL

.063

.130

.016

1.60 1.70

3.30 3.70

0.41 0.55

0.03 min

ECT

S

.001 min

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Dimensions are pre-solder dip.

4. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations.

5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

FIGURE 2. Physical dimensions 1N3595UR-1, 1N3595AUR-1 (DO-213AA).

4

MIL-PRF-19500/241N

US

Dimensions

Millimeters

Ltr

Inches

Max

Min

.070

.165

.019

.003

Min

1.78

4.19

0.48

0.08

Max

2.16

4.95

0.71

BD

BL

.085

.195

.028

ECT

S

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Dimensions are presolder dip.

4. Referencing dimension S, minimum clearance of glass body to mounting surface on all orientations.

5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

FIGURE 3. Physical dimensions - 1N3595US, 1N3595AUS.

5

MIL-PRF-19500/241N

UB

1N3595UBCA

1N3595UB

2

1

1N3595UBCC

1N3595UBD

Dimensions

Millimeters

Dimensions

Millimeters

Symbol

Inches

Symbol

Inches

Min

.035

.071

.016

Max

Min

.046

.115

.085

Min

1.17

2.92

2.16

Max

1.42

3.25

2.74

3.25

2.74

0.97

0.89

Max

.039

.079

.024

.008

.012

.022

Min

Max

0.99

2.01

0.61

0.20

0.31

0.56

BH

BL

BW

CL

CW

LL1

LL2

.056

.128

.108

.128

.108

.038

.035

LS1

LS2

LW

r

r1

r2

0.89

1.80

0.41

.022

.017

0.56

0.43

NOTES:

1. Dimensions are in inches. Millimeters are given for general information only.

2. Ceramic package only.

3. Hatched areas on package denote metallized areas. Pad 4 = shielding, connected to the lid.

4. Dimensions are pre-solder dip.

5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

* FIGURE 4. Physical dimensions, surface mount (UB version).

6

MIL-PRF-19500/241N

UB2

1N3595UB

1N3595UB2R

POLARITY

Dimensions

Inches Millimeters

Min

.046

.115

.085

Dimensions

Millimeters

Min Max

Symbol

Inches

Max

.056

.128

.108

.128

.108

.038

.035

Min

1.17

2.92

2.16

Max

1.42

3.25

2.74

3.25

2.74

0.96

0.89

Min

.071

.016

Max

.079

.024

BH

BL

BW

CL

CW

LL1

LL2

LS

LW

r

r1

r2

r3

r4

1.80

0.41

2.01

0.61

.008 TYP

0.20 TYP

0.30 TYP

0.56 TYP

0.20 TYP

0.30TYP

.012 TYP

.022 TYP

.008 TYP

.012 TYP

.022

.014

0.56

0.36

NOTES:

1. Dimensions are in inches. Millimeters are given for general information only.

2. Ceramic package only.

3. Hatched areas on package denote metallized areas. Pad 4 = shielding, connected to the lid.

4. Dimensions are pre-solder dip.

5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

* FIGURE 5. Physical dimensions, surface mount (2 pin UB version).

7

MIL-PRF-19500/241N

Dimensions

Inches Millimeters

Ltr

Min

.0079

.0145

Max

.0081

.0195

Min

0.200

0.368

Max

0.206

0.495

A

B

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Element evaluation performed utilizing a TO-5 header.

4. The physical characteristics of the die are:

Metallization:

Top (Anode):

Aluminum (Al) 25,000 Å minimum.

Back (Cathode):

Gold (Au) 4,000 Å minimum.

Die thickness:

.009 inch (0.23 mm) ±.002 inch (±0.051 mm).

FIGURE 6. Physical dimensions JANHCB and JANKCB die.

8

MIL-PRF-19500/241N

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Element evaluation performed utilizing a UB header.

4. The physical characteristics of the die are:

Metallization:

Top (Anode):

Back (Cathode):

Aluminum (Al) 30,000 Å minimum.

Gold (Au) 5,000 Å minimum.

Die thickness:

.008 inch (0.20 mm) ±.002 inch (±0.05 mm).

* FIGURE 7. Physical dimensions JANHCC and JANKCC die.

9

MIL-PRF-19500/241N

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

V

Forward recovery voltage. Specified maximum forward voltage used to determine forward recovery time.

fr

3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500,

and on figures 1 (DO-35), 2 (DO-213AA), 3 (US), 4 (UB), 5 (UB2), 6 (die), and 7 (die).

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.4.2 Diode construction. All devices shall be metallurgically bonded, double plug construction in accordance with

the requirements of MIL-PRF-19500. All glass diodes shall be designed with sufficient thermal compensation in the

axial direction to optimize tensile and compressive stresses. Dimensional analysis is required of all materials used to

achieve axial thermal compensation. Dimensional tolerances and corresponding coefficient of thermal expansion

(CTE) shall be documented on the DSCC Design and Construction Form 36D and shall be approved by the qualifying

activity to maintain qualification. Dimensional tolerances shall be sufficiently tight enough to prevent excessive

stresses due to the inherent CTE mismatch. The UR version shall be structurally identical to the axial leaded versions

except for end-cap lead attachment. The ‘US’ version shall be metallurgically bonded, thermally matched, non-cavity,

double-plug construction in accordance with the requirements of category I (see MIL-PRF-19500).

3.4.3 JANS construction. All JANS devices shall be metallurgically bonded-thermally matched non-cavity double

plug constructions utilizing only category I metallurgical bond in accordance with MIL-PRF-19500.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. Manufacturer’s identification and date code

shall be marked on the devices. Initial container package marking shall be in accordance with MIL-PRF-19500. The

polarity shall be indicated with a contrasting color band to denote the cathode end. The prefixes JAN, JANTX, and

JANTXV can be abbreviated as J, JX, JV, and JS respectively. The part number may be reduced to J3595A,

JX3595A, JV3595A, or JS3595A. No color coding shall be permitted for part numbering.

3.5.1 UR and US devices. For ‘UR’ and ‘US’ version devices only, all marking, except polarity may be omitted

from the body, but shall be retained on the initial container. Polarity marking of ‘UR’ and ‘US’ devices shall consist as

a minimum, a band or 3 contrasting dots around the periphery of the cathode.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

10

MIL-PRF-19500/241N

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not require the performance of

table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

4.3 Screening (JANS, JANTXV, JANTX, and JAN levels). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. Specified electrical measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screening

(see table E-IV of

MIL-PRF-19500)

JANS

JANTXV and JANTX level

Not required.

1a

1b

Required.

Required (JANTXV only).

3a

(1) 3c

9

Temperature cycling.

Required.

Thermal impedance (see 4.3.3).

Not required.

I

and V

F1.

R1

Method 1038 of MIL-STD-750, condition A. Method 1038 of MIL-STD-750, condition A.

, V

10

I

(2) 11

I

, V ,

R1 F1

R1 F1.

∆V ≤ ±50 mV change from initial value.

F1

∆I

≤ ±0.5 nA dc, or ≤100 percent

R1

whichever is greater.

12

See 4.3.2.

t = 240 hours minimum.

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

(3) (4) 13

∆V ≤ ±50 mV change from initial value.

F1

∆I

≤ ±0.5 nA dc, or ≤100 percent

∆I

≤ ±0.5 nA dc, or ≤100 percent

R1

whichever is greater.

R1

whichever is greater.

(1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in

accordance with MIL-PRF-19500, screen 3 prior to this thermal test.

(2) Test within 24 hours after removal from test.

(3) When thermal impedance is performed prior to screen 13, it is not required to be repeated in screen 13.

(4) PDA ≤ 5 percent.

4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

appendix G of MIL-PRF-19500. Burn-in duration for the JANKC level follows JANS requirements; the JANHC

follows JANTX requirements.

4.3.1.1 JAN testing. JAN level product which is either category II or III shall have temperature cycling and thermal

impedance testing performed in accordance with MIL-PRF-19500, JANTX level screening level requirements.

Electrical testing shall be in accordance with table I, subgroup 2 herein.

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.2): Method 1038 of

MIL-STD-750, condition B. V = rated V

; f = 50-60 Hz; I = 150 mA dc or I = 150 mA dc minimum.

R

RWM

O

F

T

= 75°C maximum. The maximum current density of small die shall be submitted to the qualifying activity for

A

approval. Alternate mounting conditions shall be submitted to the qualifying activity for approval. With approval of

the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, and mounting

conditions) may be used. A justification demonstrating equivalence is required. In addition, the manufacturing site’s

burn-in data and performance history will be essential criteria for burn-in modification approval.

11

MIL-PRF-19500/241N

4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining I , I , t , t

(V and V where

C H

M

H

SW

appropriate). Measurement delay time (t ) = 70 µs max. The thermal impedance limit used in screen 3c and

MD

table I, subgroup 2 shall be set statistically by the supplier.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500,

table I herein, and as specified herein. Electrical measurements (end-points) shall be in accordance with table I,

subgroup 2 herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in tables E-VIa (JANS) and E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and

4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.

Subgroup Method

Condition

V = 125 V(pk); T = room ambient as defined in the general requirements of

R

B4

B5

B6

1037

1027

4081

A

MIL-STD-750; I = 150 mA dc; t = t = 3 minutes minimum for 2,000 cycles.

O

on

off

V

= rated V

, I = 150 mA (min), adjust T or I to obtain a minimum

(pk)

T of +175°C.

RWM O

A

O

J

L = .375 inch (9.53 mm); R

= 250°C/W maximum, R

= 40°C/W maximum for

θJL

θJEC

US, R

= 100°C/W maximum for UR. (See 4.3.3.)

θJEC

4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Leaded samples from

the same lot may be used in lieu of ‘UR’ or ‘US’ suffix sample for life test.

Subgroup Method

Conditions

B2

1056

1051

2005

0°C to +100°C, 10 cycles.

-55°C to +175°C, 45 cycles, including screening.

I

= 100 mA, axial tensile stress = 8 lbs, T = +150ºC; (not applicable to ‘UR’ or ‘US’

A

F

package).

B3

1026

V

= rated V

; f = 50 - 60 Hz; I = 150 mA dc minimum; adjust T or I to obtain

RWM O A O

(pk)

a minimum T of +150°C. (See 4.5.2.)

J

B4

B5

2101

4081

Decap analysis; scribe and break only.

L = .375 inch (9.53 mm); R

= 250°C/W maximum, R = 40°C/W maximum for

θJEC

θJL

= 100°C/W maximum for UR. (See 4.3.3.)

US, R

θJEC

B6

1032

T = +175°C.

A

12

MIL-PRF-19500/241N

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in

accordance with table I, subgroup 2 and table III herein.

4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.

Subgroup Method Conditions

C2

1056

1051

2036

0°C to + 100°C, 10 cycles.

-55°C to + 175°C, 45 cycles including screening.

*

Axial devices - Tension: Condition A, 10 pounds, t = 15 s. Lead fatigue: Condition E.

US devices - Tension: Condition A, 10 pounds, t = 15 s. Suitable fixtures may be used to

pull the end-caps in a manner which does not aid construction. Reference to axial lead may

be interpreted as end-cap with fixtures used for mounting. (Tension is not applicable to ‘UR’

suffix types) (Lead fatigue is not applicable to US and UR suffix types).

C5

C6

Not applicable.

1026

1,000 hours minimum, V(

pk)

= rated V

; f = 50 - 60 Hz; I = 150 mA dc minimum; adjust

RWM O

T or I to obtain a minimum T of +150°C. (See 4.5.2.)

A

O

J

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-IX of MIL-PRF-19500, and table II herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of

MIL-STD-750.

4.5.2 Free air power burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided

that each device under test still sees the full P (minimum) and that the minimum applied voltage, where applicable, is

t

maintained throughout the burn-in period. Method 3100 of MIL-STD-750 shall be used to measure T .

J

13

MIL-PRF-19500/241N

TABLE I. Group A inspection.

MIL-STD-750

Conditions

Limits

Inspection 1/ 2/

Subgroup 1

Symbol

Unit

Method

2071

Min

Max

Visual and mechanical

examination

Subgroup 2

Thermal impedance

3101

See 4.3.3

Z

70

°C /W

θJX

Forward voltage

4011

I

= 200 mA dc

= 100 mA dc

= 50 mA dc

= 10 mA dc

= 5 mA dc

V

.83

.79

.74

.65

.60

.52

1.00

.92

.88

.80

.765

V dc

F

F1

F2

F3

F4

F5

F6

.70

= 1 mA dc

Reverse current

1N3595

1N3595A

4016

DC method, V = 125 V dc

I

R1

R

1.0

2.0

nA dc

Subgroup 3

High temperature

operation

T = +150°C

A

Reverse current

4016

4021

DC method; V = 125 V dc

I

3.0

µA dc

R

R2

Low temperature

operation

T

= -55°C

A

Breakdown voltage

I

= 100 µA dc

V

150

V dc

R

(BR)

See footnotes at end of table.

14

MIL-PRF-19500/241N

TABLE I. Group A inspection - Continued.

MIL-STD-750

Symbol

Limits

Inspection 1/ 2/

Unit

Method

Conditions

Min

Max

Subgroup 4

Capacitance

4001

4031

V

= 0 V dc, f = 1 MHz

C

8.0

3

pF

R

Reverse recovery

time

Condition A, I = 10 mA dc,

V

t

µs

F

rr

= 35 V dc, R = 1,000 Ω,

R

.6 uF (for test setup only,

recover to 100 kΩ)

Subgroup 5

Not applicable

Subgroup 6

Surge current

4066

I

= 150 mA dc, I = 0.50 A,

FSM

O

ten 1 second surges, one surge

per minute

Electrical

measurements

See table I, group A, subgroup 2

herein

Subgroup 7

Not applicable

1/ For sampling plan, see MIL-PRF-19500.

2/ Electrical characteristics for all surface mount versions are identical to the corresponding axial leaded versions

unless otherwise specified.

15

MIL-PRF-19500/241N

TABLE II. Group E inspection (all quality levels) for qualification and requalification only.

MIL-STD-750

Qualification

inspection

Inspection

Method

1056

Conditions

Subgroup 1

n = 45, c = 0

Thermal shock (glass

strain)

100 cycles 0°C to 100°C.

Temperature cycling

1051

1071

500 cycles, -65°C to +175°C.

Hermetic seal

Gross leak only.

Electrical measurements

Subgroup 2

See table I, subgroup 2.

Intermittent operating life

1037

10,000 cycles; I = I = 150 mA dc, T = T = 1 minute

on off

F

O

Electrical measurements

Subgroup 4

See table I, subgroup 2.

Thermal impedance

curves

See MIL-PRF-19500.

Subgroup 5

Not applicable

Subgroup 6

ESD

1020

1057

*

Subgroup 8

Resistance to glass

cracking

Test condition B. Test until failure occurs or to a maximum of

25 cycles, whichever comes first.

n = 45

Subgroup 9

Monitored mission

temperature cycling

1055

n = 22, c = 0

Electrical measurements

See table I, subgroup 2.

16

MIL-PRF-19500/241N

TABLE III. Groups B and C delta measurements. 1/ 2/

MIL-STD-750

Symbol

Limits

Step

1.

Inspection 1/

Method

4011

Conditions

Min

Max

Forward voltage

I

= 200 mA dc

∆V

≤ 50 mV change from initial

F

F1

value.

2

Reverse current

4016

DC method;

= 125 V dc

∆I

≤ 100 percent of initial value

or 0.1 nA dc, whichever is

greater.

R1

V

R

1/ The delta measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 4, see table III herein, steps 1 and 2.

b. Subgroup 5, see table III herein, steps 1 and 2.

2/ The delta measurements for table E-VII of MIL-PRF-19500 are as follows: Subgroup 6, see table III herein,

steps 1 and 2 (JANS only).

17

MIL-PRF-19500/241N

TEMPERATURE-CURRENT DERATING CURVE

1N3595-1, 1N3595A-1, 1N3595UR-1,

1N3595AUR-1, 1N3595US, AND 1N3595AUS

DC OPERATION

T (°C) (AMBIENT)

C

THERMAL RESISTANCE JUNCTION TO AMBIENT = 275°C/W

NOTES:

1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at ≤ T

J

specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired

maximum T allowed.

J

2. Derate design curve constrained by the maximum junction temperature (T ≤ 175°C) and power/current rating

J

specified. (See 1.3 herein.)

3. Derate design curve chosen at T ≤ 150°C, where the maximum temperature of electrical test is performed.

J

4. Derate design curves chosen at T ≤ 125°C, and 110°C to show power/current rating where most users want to

J

limit T in their application.

J

FIGURE 8. Temperature-current derating graph.

18

MIL-PRF-19500/241N

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order

(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel

need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are

maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or

within the Military Service’s system commands. Packaging data retrieval is available from the managing Military

Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible

packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.

The notes specified in MIL-PRF-19500 are applicable to this specification.)

6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design

applications and logistic support of existing equipment.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of this specification.

b. Packaging requirements (see 5.1).

c. Lead finish (see 3.4.1).

d. Product assurance level and type designator.

e. Destructive physical analysis when requested.

* 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,

at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML-19500) whether or not

such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from

Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail

vqe.chief@dla.mil. An online listing of products qualified to this specification may be found in the Qualified Products

Database (QPD) at https://assist.dla.mil.

* 6.4 Suppliers of JANHC die. The qualified JANHC suppliers with the applicable letter version (example

JANHCB1N3595) will be identified on the QML.

JANC ordering information

Manufacturer - 43611

JANHCB1N3595

JANKCB1N3595

Manufacturer - 34156

JANHCC1N3595

JANKCC1N3595

1N3595

6.4.1 Substitutability. The following shows the direct substitutability.

Superseded part number

1N3595

Superseding part number

1N3595-1

1N3595US-1

1N3595US

19

MIL-PRF-19500/241N

6.4.2 Substitutability for “A-suffix” parts. “Non-A-suffix” devices are optionally a direct substitute for “A-suffix”

devices. The following shows the direct substitutability.

A-version Part Number

1N3595A-1

Substitute Part Number

1N3595-1

1N3595AUR-1

1N3595AUS

1N3595UR-1

1N3595US

6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

Custodians:

Army - CR

Navy - EC

Air Force - 85

NASA - NA

DLA - CC

Preparing activity:

DLA - CC

(Project 5961-2013-102)

Review activities:

Army - AR, MI, SM

Navy - AS, MC

Air Force - 19

* NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and responsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at https://assist.dla.mil.

20


型号：	JANTX1N3595A-1
厂家：	Microsemi
描述：	Rectifier Diode, 1 Element, 0.15A, 125V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 二极管
文件：	总20页 (文件大小：262K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

JANTX1N3595A-1 [MICROSEMI]

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