JANTX1N5533DUR [MICROSEMI]

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW; 无铅封装用于表面安装齐纳二极管500mW的
相关元器件产品Datasheet PDF文档

JANTX1N5533DUR-1

Low Voltage Surface Mount 500 mW Avalanche Diodes
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JANTX1N5533DUR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
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JANTX1N5533DURTR

Zener Diode, 13V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL34, MELF-2
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JANTX1N5533DURTR-1

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JANTX1N5533UR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
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MAX34334CSE前5页PDF页面详情预览
• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/437
• ZENER DIODE, 500mW
• LEADLESS PACKAGE FOR SURFACE MOUNT
• LOW REVERSE LEAKAGE CHARACTERISTICS
• METALLURGICALLY BONDED
1N5518BUR-1
thru
1N5546BUR-1
and
CDLL5518 thru CDLL5546D
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +125°C
DC Power Dissipation: 500 mW @ TEC = +125°C
Power Derating: 10 mW / °C above TEC = +125°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CDI
TYPE
NUMBER
NOMINAL
ZENER
ZENER
TEST
VOLTAGE CURRENT
VZ@ 1ZT
1ZT
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
ZZT @ 1ZT
(NOTE 3)
OHMS
MAXIMUM REVERSE
LEAKAGE CURRENT
REGULATION
FACTOR
CURRENT
∆V
Z
(NOTE 5)
VOLTS
LOW
VZ
CURRENT
1ZL
(NOTE 1)
(NOTE 2)
VOLTS
mA
lR
(NOTE 4)
VR = VOLTS
NON & A-
SUFFIX
B-C-D-
SUFFIX
1ZM
µ
Adc
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
mA
mA
CDLL5518B
CDLL5519B
CDLL5520B
CDLL5521B
CDLL5522B
CDLL5523B
CDLL5524B
CDLL5525B
CDLL5526B
CDLL5527B
CDLL5528B
CDLL5529B
CDLL5530B
CDLL5531B
CDLL5532B
CDLL5533B
CDLL5534B
CDLL5535B
CDLL5536B
CDLL5537B
CDLL5538B
CDLL5539B
CDLL5540B
CDLL5541B
CDLL5542B
CDLL5543B
CDLL5544B
CDLL5545B
CDLL5546B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
26
24
22
18
22
26
30
30
30
35
40
45
60
80
90
90
100
100
100
100
100
100
100
100
100
100
100
100
100
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
10.5
11.5
12.5
13.0
14.0
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
FIGURE 1
DESIGN DATA
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
100 °C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (Z
OJX): 35
°C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
NOTE 1
No Suffix type numbers are +20% with guaranteed limits for only VZ, lR, and VF.
Units with “A” suffix are +10% with guaranteed limits for VZ, lR, and VF. Units with
guaranteed limits for all six parameters are indicated by a “B” suffix for +5.0% units,
“C” suffix for+2.0% and “D” suffix for +1.0%.
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal to
10% of1ZT.
NOTE 2
NOTE 3
NOTE 4
NOTE 5
Reverse leakage currents are measured at VR as shown on the table.
∆V
Z is the maximum difference between VZ at lZT and VZ at lZL measured
with the device junction in thermal equilibrium.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
143
CDLL5518
thru
FIGURE 2
CDLL5546D
Pd, Rated Power
Dissipation (mW)
500
400
300
200
100
0
0
25
50
75
100
125
150
175
TEC , End cap temperature (C°)
POWER DERATING CURVE
1000
500
400
300
200
ZENER IMPEDANCE Z
ZT
(OHMS)
100
50
40
30
20
28 VOLT
10
5
4
3
2
11 VOLT
6.8 VOLT
1
.1
.2
.5
1
2
5
10
20
50
100
OPERATING CURRENT I
ZT
(mA)
FIGURE 3
ZENER IMPEDANCE VS. OPERATING CURRENT
144