JANTX2N3743U4 [MICROSEMI]
Transistor;
| 型号： | JANTX2N3743U4 |
| 厂家： | 
Microsemi |
| 描述： | Transistor |
| 文件： | 总24页 (文件大小：698K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCH-POUND
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 4 May 2010.
MIL-PRF-19500/397J
4 February 2010
SUPERSEDING
MIL-PRF-19500/397H
17 June 2004
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON,
TYPES 2N3743, 2N3743U4, 2N4930, 2N4930U4, 2N4931, AND 2N4931U4,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, high-voltage transistor.
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance for die are provided for each unencapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-39), figure 2 (U4), and figures 3 and 4 for JANHC and JANKC (die)
dimensions.
*
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
RθJA
(2)
RθJPCB
(2)
RθJC
(2)
Type
PT (1)
TA =
+25°C
W
PT (1)
TPCB
PT (1)
TC =
+25°C
W
VCBO
VEBO
VCEO
IC
TJ and
TSTG
=
+25°C
°C/W
175
175
175
°C/W
°C/W
30
W
V dc
300
200
250
300
200
250
V dc
V dc
300
200
250
300
200
250
mA dc
200
200
200
200
200
200
°C
2N3743
1.0
5
5
5
5
5
5
5
30
2N4930
1.0
5
30
2N4931
1.0
5
-65 to
+200
175
175
175
15
2N3743U4
2N4930U4
2N4931U4
1.0
1.0
1.0
10
15
10
15
10
* (1) For derating see figures 5, 6, 7, and 8.
* (2) For thermal impedance curves see figures 9, 10, and 11.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at https://assist.daps.dla.mil .
AMSC N/A
FSC 5961
MIL-PRF-19500/397J
1.4 Primary electrical characteristics at TA= +25°C.
|hfe|
hFE1 (1)
hFE4 (1)
VBE(sat)2 (1)
VCE(sat)1 (1)
Cobo
Limits
IE = 0
IC = 10 mA dc
IC = 0.1 mA dc
VCE = 10 V dc
IC = 30 mA dc
VCE = 10 V dc
IC = 30 mA
dc
IB = 3 mA dc
IC = 30 mA dc
IB = 3 mA dc
VCB = 20 V dc
f ≥ 0.1 MHz
pF
VCE = 20 V dc
f = 20 MHz
V dc
1.2
V dc
1.2
Min
Max
2.0
8.0
30
50
200
15
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 - Test Methods for Semiconductor Devices.
*
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch or
https://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
*
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/397J
TO-39
Dimensions
Millimeters
Symbol
Inches
Note
Min
Max
.335
.260
.370
Min
7.75
6.10
8.51
Max
8.51
6.60
9.40
CD
CH
HD
LC
LD
LL
.305
.240
.335
.200 TP
5.08 TP
7
8,9
.016
.500
.016
.019
.750
.019
.050
0.41
12.7
0.41
0.48
19.0
0.48
1.27
LU
8,9
8,9
L
1
.250
.100
6.35
2.54
8,9
L
P
Q
TL
TW
r
2
6
5
3,4
3, 4
.030
.045
.034
.010
0.76
1.14
0.86
0.25
.029
.028
0.74
0.71
α
45° TP
45° TP
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007
inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
The device may be measured by direct methods or by the gauge and gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions (TO-39).
3
MIL-PRF-19500/397J
CH
LW1
1
BW
U4
LL1
BL
Q1 (2X)
LL2 (2X)
LW2
(2X)
Q2
2
3
LS2
LH
(3X)
Ls1
Symbol
Dimensions
Inches
Millimeters
Min
.215
.145
.049
Max
.225
.155
.075
.020
.145
.057
.125
.075
.095
.048
.070
.035
Min
Max
5.72
3.94
1.91
0.51
3.68
1.45
3.18
1.90
2.41
1.22
1.78
0.89
BL
BW
CH
5.46
3.68
1.24
LH
LW1
LW2
LL1
LL2
LS1
LS2
Q1
.135
.047
.085
.045
.070
.035
.030
.020
3.43
1.19
2.16
1.14
1.78
0.89
0.76
0.51
Q2
Terminal
1
Collector
2
Base
3
Emitter
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 2. Physical dimensions and configuration (U4).
4
MIL-PRF-19500/397J
Letter
Dimensions
Inches
Millimeters
Min
.041
.041
Max
.041
.041
Min
1.04
1.04
Max
1.04
1.04
A
C
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The physical characteristics of the die are:
Thickness:
Top metal:
Back metal:
Back side:
Bonding pad:
.006 inch (0.15 mm) to .012 inch (0.30 mm).
Aluminum 17,500 Å minimum, 20,000 Å nominal.
Gold 2,500 Å minimum, 3,000 Å nominal.
Collector.
B = .004 inch (0.10 mm) x .005 inch (0.13 mm).
E = .004 inch (0.10 mm) x .0055 inch (0.14 mm).
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 3. JANHC and JANKC (A-version) die dimensions.
5
MIL-PRF-19500/397J
NOTES:
1. Chip size:
40 x 40 mils ±1 mil.
2. Chip thickness:
10 ±1.5 mil.
3. Top metal:
4. Back metal:
Aluminum 15,000Å minimum, 18,000Å nominal.
A. Al/Ti/Ni/Ag 12kÅ/3kÅ/7kÅ/7kÅ min., 15kÅ/5kÅ/10kÅ/10kÅ nom.
B. Gold 2,500Å minimum, 3,000Å nominal.
C. Eutectic Mount – No Gold.
5. Backside:
Collector.
6. Bonding pad:
B = 6 x 8 mils, E = 6 x 4 mils.
FIGURE 4. JANHC and JANKC (B-version) die dimensions.
6
MIL-PRF-19500/397J
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list before
contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
Rθ
JSP
Thermal resistance junction to solder pads (adhesive mount to PCB).
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1 (TO-39), figure 2 (U4), and figures 3 and 4 for JANHC and JANKC (die) herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4 and table I.
3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I.
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I and II).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
7
MIL-PRF-19500/397J
*
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table-E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
of MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
(1) 3c
Thermal impedance, method 3131
of MIL-STD-750
Thermal impedance, method 3131
of MIL-STD-750
9
Not applicable
ICBO1 and hFE4
ICBO1
11
ICBO1 and hFE4
∆ICBO = 100 percent of initial value
or 50 nA dc, whichever is greater
12
13
See 4.3.1
240 hours minimum
See 4.3.1
Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
∆ICBO1 = 100 percent of initial value ∆ICBO1 = 100 percent of initial
or 50 nA dc, whichever is greater;
value or 50 nA dc, whichever is
greater; ∆hFE4 = ±20 percent
∆hFE4 = ±15 percent
14
Required
Required
*
(1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in
screening requirements.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc, TA = 25°C + 5°C.
Power shall be applied to the device to achieve the required junction temperature, TJ = +135°C minimum using a
minimum power dissipation = 75 percent of max PT as defined in 1.3. NOTE: No heat sink or forced air cooling on
the devices shall be permitted. Power burn-in conditions for "U4" suffix devices are identical to their corresponding
non suffix devices.
4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
*
4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where
appropriate). The ZθJX limit used in screen 3c of 4.3 and subgroup 2 of table I shall comply with the thermal
impedance graph on figures 9 through 11 (less than or equal to the curve value at the same tH time) or shall be less
than the process determined statistical maximum limit as outlined in method 3131.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I,
subgroup 2 herein.
8
MIL-PRF-19500/397J
*
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIa (JANS) and 4.4.2.1 herein. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical
measurements (end-points) JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance
with table I, subgroup 2 herein.
*
4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup
B4
Method
1037
Condition
VCE = 30 V dc, 2,000 cycles.
B5
1027
(NOTE: If a failure occurs, resubmission shall be at the test conditions of the
original sample). VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see
1.3).
Option 1: 96 hours minimum, sample size in accordance with table E-VIa of
MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours, sample size = 45, c = 0; adjust TA or PD to achieve
TJ = +225°C minimum.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic
failures during CI shall be analyzed to the extent possible to identify root cause and corrective action.
Step
1
Method
1039
Condition
Steady-state life: Test condition B, 1,000 hours minimum, VCB = 10 V dc,
power shall be applied to achieve TJ = +175°C minimum using a minimum of
PD = 75 percent of maximum rated PT as defined in 1.3. n = 45 devices, c = 0.
2
3
1039
1032
HTRB: Test condition A, 48 hours minimum. n = 45 devices, c = 0.
High-temperature life (non-operating), TA = +200°C. n = 22, c = 0.
*
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from
each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See
MIL-PRF-19500.
b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
*
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500 and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV)
herein for group C testing. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2
herein.
9
MIL-PRF-19500/397J
*
4.4.3.1 Group C inspection, table E-VII (JANS) of MIL-PRF-19500.
Subgroup
C2
Method
2036
Condition
Test condition E; (not applicable for U4 devices).
RθJA for TO-39, UA, and UB. RθJC for U4.
*
*
C5
3131
C6
1026
VCB = 10 to 30 V dc; TJ = +175°C minimum. No heat sink or forced-air cooling
on the devices shall be permitted.
4.4.3.2 Group C inspection, table E-VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
2036
Condition
C2
C5
C6
Test condition E; (Not applicable for U4 devices).
See 4.4.5, RθJA for TO-39. RθJC for U4.
Not applicable.
3131
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot
containing the intended package type and lead finish procured to the same specification which is submitted to and
passes table I tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the
intended package type shall be considered as complying with the requirements for that subgroup.
*
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall
be in accordance with table I, subgroup 2 herein.
4.4.5 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method
3131 of MIL-STD-750.
a. IM measurement............................................................................10 mA.
b. VCE measurement voltage (same as VH) ....................................25 V dc.
c. IH collector heating current...........................................................0.2 A dc.
d. VH collector-emitter heating voltage.............................................25 V dc.
e. tH heating time ............................................................................ 1 second minimum.
f. tMD measurement delay time ........................................................50 µs maximum.
g. tSW sampling window time ...........................................................10 µs maximum.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
10
MIL-PRF-19500/397J
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Conditions
Limit
Max
Unit
Symbol
Method
2071
Min
Subgroup 1 2/
Visual and mechanical
examination 3/
n = 45 devices, c = 0
Solderability 3/ 4/
2026
1022
n = 15 leads, c = 0
Resistance to
n = 15 devices, c = 0
solvent 3/ 4/ 5/
Temp cycling 3/ 4/
Hermetic seal 4/
1051
1071
Test condition C, 25 cycles.
n = 22 devices, c = 0
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical
Table I, subgroup 2
measurements 4/
Bond strength 3/ 4/
2037
2075
Precondition TA = +250°C at
t = 24 hrs or
TA = +300°C at t = 2 hrs,
n = 11 wires, c = 0
Decap internal visual
(design verification)
n = 4 devices, c = 0
Subgroup 2
Thermal impedance 6/
3131
3001
See 4.3.3
Zθ
°C/W
JX
Breakdown voltage,
collector to base
Bias condition D,
IC = 100 µA dc
V(BR)CBO
V(BR)CEO
V(BR)EBO
2N3743, U4
2N4930, U4
2N4931, U4
300
200
250
V dc
V dc
V dc
Breakdown voltage,
collector to emitter
2N3743, U4
2N4930, U4
2N4931, U4
3011
3026
Pulsed (see 4.5.1), bias
condition D, IC = 1.0 mA dc
300
200
250
V dc
V dc
V dc
Breakdown voltage,
emitter to base
Bias condition D,
IE = 100 µA dc
5
V dc
See footnotes at end of table.
11
MIL-PRF-19500/397J
* TABLE I. Group A inspection. - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
3036
Conditions
Min
Max
Subgroup 2 -
Continued.
Collector to base
cutoff current
2N3743, U4
2N4930, U4
2N4931, U4
Bias condition D, IE = 0
ICBO1
250
nA
VCB = 250 V dc
VCB = 150 V dc
VCB = 200 V dc
Emitter to base
cutoff current
3061
3076
3076
3076
3076
3076
3071
3071
3066
3066
150
nA dc
Bias condition D, VEB = 4 V dc
IEBO
Forward current
transfer ratio
30
40
40
50
30
Pulsed (see 4.5.1),
IC = 0.1 mA dc, VCE = 10 V dc
hFE1
Forward current
transfer ratio
Pulsed (see 4.5.1),
IC = 1.0 mA dc, VCE = 10 V dc
hFE2
Forward current
transfer ratio
Pulsed (see 4.5.1),
IC = 10 mA dc, VCE = 10 V dc
hFE3
Forward current
transfer ratio
200
Pulsed (see 4.5.1),
IC = 30 mA dc, VCE = 10 V dc
hFE4
Forward current
transfer ratio
Pulsed (see 4.5.1),
IC = 50 mA dc, VCE = 20 V dc
hFE5
Collector to emitter
voltage (saturated)
1.2
1.0
1.0
1.2
V dc
V dc
V dc
V dc
Pulsed (see 4.5.1),
IC = 30 mA dc, IB = 3 mA dc
VCE(sat)1
Collector to emitter
voltage (saturated)
Pulsed (see 4.5.1),
IC = 10 mA dc, IB = 1 mA dc
VCE(sat)2
Base emitter voltage
(saturated)
Test condition A, IC = 10 mA dc, VBE(sat)1
IB = 1 mA dc, pulsed (see 4.5.1)
Base emitter voltage
(saturated)
Test condition A, IC = 30 mA dc, VBE(sat)2
IB = 3 mA dc, pulsed (see 4.5.1)
See footnotes at end of table.
12
MIL-PRF-19500/397J
* TABLE I. Group A inspection. - Continued.
Inspection 1/
Subgroup 3
MIL-STD-750
Symbol
Limit
Min Max
Unit
Method
3036
Conditions
High-temperature
operation:
TA = +150°C
Collector to base
cutoff current
Bias condition D
ICBO2
5
µA dc
2N3743, U4
2N4930, U4
2N4931, U4
VCB = 250 V dc
VCB = 150 V dc
VCB = 200 V dc
Low-temperature
operation:
TA = -55°C
3076
25
Forward current
transfer ratio
Pulsed (see 4.5.1),
IC = 30 mA dc, VCE = 10 V dc
hFE6
Open circuit (output
capacitance)
3236
3240
15
pF
pF
VCB = 20 V dc, IE = 0, f ≥ 0.1
MHz
Cobo
Input capacitance
(output open
circuited)
400
VEB = 1 V dc, IC = 0, f ≥ 0.1
MHz
Cibo
Subgroup 4 - Continued.
Small-signal current
gain
3306
3206
2
8
VCE = 20 V dc, IC = 10 mA dc,
f = 20 MHz
|hfe|
hfe
Small-signal current
gain
30
300
VCE = 10 V dc, IC = 10 mA dc,
f = 1 kHz
13
MIL-PRF-19500/397J
* TABLE I. Group A inspection. - Continued.
Inspection 1/
Subgroup 5
MIL-STD-750
Symbol
Limit
Min Max
Unit
Method
3051
Conditions
Safe operating area
(dc operation)
TC = +25°C, t ≥ 1 second,
1 cycle
Test 1
Test 2
Test 3
I
I
= 50 mA dc, V = 20 V dc
CE
C
C
= 10 mA dc, V = 100 V dc
CE
2N3743, U4
2N4930, U4
2N4931, U4
I
I
I
= 3.3 mA dc, V = 300 V dc
CE
C
C
C
= 5 mA dc, V = 200 V dc
CE
= 4 mA dc, V = 250 V dc
CE
Electrical measurements
See table I, subgroup 2 herein
1/ For sampling plan, see MIL-PRF-19500.
2/ For resubmission of failed subgroup 1, double the sample size of the failed test or sequence of tests.
3/ Separate samples may be used.
4/ Not required for JANS.
5/ Not required for laser marked devices.
*
6/ This test required for the following end-point measurements only:
Group B, subgroups 3, 4, and 5 (JANS).
Group B, see 4.4.2.2 herein, after each step (JAN, JANTX, and JANTXV).
Group C, subgroup 2 and 6.
Group E, subgroup 1.
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MIL-PRF-19500/397J
* TABLE II. Group E inspection (all quality levels) – for qualification and re-qualification only.
Inspection
MIL-STD-750
Conditions
Qualification
Method
1051
Subgroup 1
45 devices
c = 0
Temperature cycling
(air to air)
Test condition C, 500 cycles.
Hermetic seal
Fine leak
1071
Gross leak
Electrical measurements
Subgroup 2
See table I, subgroup 2 herein.
45 devices
c = 0
Intermittent life
1037
3131
VCB = 10 V dc, 6,000 cycles.
See table I, subgroup 2 herein.
Electrical measurements
Subgroup 4
Thermal impedance,
Each supplier shall submit their (typical)
Sample size
N/A
thermal resistance curves
maximum design thermal impedance curves to
the qualifying activity. In addition, the optimal
test conditions and ZθJX limit shall be provided to
the qualifying activity in the qualification report.
Subgroup 5
5 devices
c = 0
Barometric pressure
(2N3743, 2N3743U4,
2N4931, and 2N4931U4
only)
1001
1020
VCBO = 350 V, IC = 10 nA, condition D,
Pressure = 8 mm HG, normal mounting,
t = 60 seconds minimum.
Subgroup 6
3 devices
ESD
Subgroup 8
45 devices
c = 0
Reverse stability
1033
Condition B for devices < 400 V.
15
MIL-PRF-19500/397J
NOTES:
1. Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance value.
All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will intersect
the appropriate power for the desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3.)
3. Derate design curve chosen at TJ ≤ 150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ 125°C, and 110°C to show power rating where most users want to limit TJ
in their application.
* FIGURE 5. Derating for 2N3743, 2N4930, and 2N4931 (TO-39).
16
MIL-PRF-19500/397J
NOTES:
1. Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance value.
All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will intersect
the appropriate power for the desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3.)
3. Derate design curve chosen at TJ ≤ 150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ 125°C, and 110°C to show power rating where most users want to limit TJ
in their application.
* FIGURE 6. Derating for 2N3743, 2N4930, and 2N4931 (TO-39).
17
MIL-PRF-19500/397J
NOTES:
1. Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance value.
All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will intersect
the appropriate power for the desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3.)
3. Derate design curve chosen at TJ ≤ 150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ 125°C, and 110°C to show power rating where most users want to limit TJ
in their application.
* FIGURE 7. Derating for 2N3743U4, 2N4930U4, and 2N4931U4.
18
MIL-PRF-19500/397J
NOTES:
1. Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance value.
All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will intersect
the appropriate power for the desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3.)
3. Derate design curve chosen at TJ ≤ 150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ 125°C, and 110°C to show power rating where most users want to limit TJ
in their application.
* FIGURE 8. Derating for 2N3743U4, 2N4930U4, and 2N4931U4.
19
MIL-PRF-19500/397J
Maximum Thermal Impedance
Free Air Ta=25C
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
1000
100
10
1
0.1
Time (s)
RθJA = 175°C
* FIGURE 9. Thermal impedance for 2N3743, 2N4930, 2N4931(TO-39).
20
MIL-PRF-19500/397J
Maximum Thermal Impedance
Tc=25C
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
100
10
1
0.1
Time (s)
RθJC = 30°C
* FIGURE 10. Thermal impedance for 2N3743, 2N4930, 2N4931 (TO-39).
21
MIL-PRF-19500/397J
Maximum Thermal Impedance
Tc = 25°C
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
100
10
1
0.1
Time (s)
RθJC = 15°C
* FIGURE 11. Thermal impedance for 2N3743U4, 2N4930U4, 2N4931U4 (U4).
22
MIL-PRF-19500/397J
5. PACKAGING
*
5.1. Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these
personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging
requirements are maintained by the Inventory Control Points' packaging activity within the Military Service or Defense
Agency, or within the Military Service's system Command. Packaging data retrieval is available from the managing
Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
*
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
*
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish as specified (see 3.4.1).
d. Product assurance level and type designation.
*
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML No. 19500) whether
or not such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail
vqe.chief@dla.mil. An online listing of products qualified to this specification may be found in the Qualified Products
Database (QPD) at https://assist.daps.dla.mil .
6.4 Substitution information. Devices covered by this specification are substitutable for the manufacturer's and
user's Part or Identifying Number (PIN). This information in no way implies that manufacturers’ PIN’s are suitable as
a substitute for the military PIN.
Preferred types
Military PIN
Commercial PIN
2N3743
SUN1446H, SS4238H
2N4930
2N4931
SUN1446H, SS5152H
SUN1446H, ST1390H, ST147H
23
MIL-PRF-19500/397J
6.5 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example,
JANHCA2N3743) will be identified on the qualified manufacturer’s list.
JANC ordering information
Manufacturers
PIN
33178
43611
2N3743
2N4930
2N4931
JANHCA2N3743,
JANKCA2N3743
JANHCA2N4930,
JANKCA2N4930
JANHCA2N4931,
JANKCA2N4931
JANHCB2N3743,
JANKCB2N3743
JANHCB2N4930,
JANKCB2N4930
JANHCB2N4931,
JANKCB2N4931
6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 85
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2009-045)
Review activities:
Army - AR, AV, MI
Navy - AS, MC
Air Force – 19, 71
* NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.daps.dla.mil .
24
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