JANTX2N6299 [MICROSEMI]
PNP DARLINGTON POWER SILICON TRANSISTOR; PNP达林顿功率硅晶体管型号: | JANTX2N6299 |
厂家: | Microsemi |
描述: | PNP DARLINGTON POWER SILICON TRANSISTOR |
文件: | 总2页 (文件大小:59K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 540
Devices
Qualified Level
JAN
2N6298
2N6299
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6298 2N6299 Units
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
60
80
Vdc
VCEO
VCBO
VEBO
IB
60
80
Vdc
5.0
120
8.0
Vdc
mAdc
Adc
Collector Current
IC
Total Power Dissipation @ TC = 00C (1)
@
75
32
W
W
0C
PT
TC = 1000C
Operating & Storage Junction Temperature Range
-65 to +175
TOP,TSTG
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/W
TO-66* (TO-213AA)
Thermal Resistance, Junction-to-Case
1) Derate linearly 0.428 W/0C above TC > 00C
2.33
R
qJC
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
Symbol
Min.
Max.
Unit
Vdc
60
80
2N6298
2N6299
V(BR)
CEO
Collector-Emitter Cutoff Current
VCE = 30 Vdc
VCE = 40 Vdc
0.5
0.5
mAdc
2N6298
2N6299
ICEO
Collector-Emitter Cutoff Current
VCE = 60 Vdc, VBE = 1.5 Vdc
VCE = 80 Vdc, VBE = 1.5 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
0.5
0.5
mAdc
mAdc
2N6298
2N6299
ICEX
2.0
IEBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6298, 2N6299 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 3.0 Vdc
IC = 4.0 Adc, VCE = 3.0 Vdc
IC = 8.0 Adc, VCE = 3.0 Vdc
Collector-Emitter Saturation Voltage
IC = 4.0 Adc, IB = 16 mAdc
IC = 8.0 Adc, IB = 80 mAdc
Base-Emitter Saturation Voltage
IC = 8.0 Adc, IB = 80 mAdc
Base-Emitter Voltage
500
750
100
18,000
hFE
2.0
3.0
Vdc
VCE(sat)
4.0
2.8
Vdc
Vdc
VBE(sat)
VBE(on)
IC = 4.0 Adc, VCE = 3.0 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz
Output Capacitance
25
350
200
½hfe½
300
hfe
pF
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
ton
2.0
8.0
ms
ms
VCC = 30 Vdc; IC = 4.0 Adc; IB1 = 16 mAdc
Turn-Off Time
VCC = 30 Vdc; IC = 4.0 Adc; IB1 = 16 mAdc
toff
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 8.0 Vdc, IC = 8.0 Adc
Test 2
VCE = 20 Vdc, IC = 2.0 Adc
Test 3
VCE = 60 Vdc, IC = 100 mAdc
VCE = 80 Vdc, IC = 100 mAdc
2N6298
2N6299
(2) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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