JANTXV1N6080 [MICROSEMI]
Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN;型号: | JANTXV1N6080 |
厂家: | Microsemi |
描述: | Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN |
文件: | 总3页 (文件大小:352K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N6073 thru 1N6081
VOIDLESS HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/503 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (TL =70ºC) in
different package sizes for working peak reverse voltages from 50 to 150 volts are
hermetically sealed with voidless-glass construction using an internal “Category I”
metallurgical bond. These devices are also available in surface mount MELF
package configurations by adding a “US” suffix (see separate data sheet for
1N6073US thru 1N6081US). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
Popular JEDEC registered 1N6073 to 1N6081 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
•
Ultrafast recovery rectifier series 50 to 150 V
•
•
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
•
•
High forward surge current capability
Low thermal resistance
JAN, JANTX, and JANTXV available for 1N6074 and
1N6075 per MIL-PRF-19500/503
•
Controlled avalanche with peak reverse power
•
Further options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, or JANS by
using a MQ, MX, MV or MSP prefix respectively , e.g.
MX6076, MV6079, MSP6081, etc.
capability
•
Inherently radiation hard as described in Microsemi
MicroNote 050
•
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
Junction Temperature: -65oC to +155oC
•
•
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
•
•
Storage Temperature: -65oC to +155oC
Peak Forward Surge Current @ 25oC: 35 Amps for
1N6073-6075, 75 Amps for 1N6076-6078, and 175
Amps for 1N6079-6081 at 8.3 ms half-sine wave
TERMINATIONS: Axial-leads are Copper with
Tin/Lead (Sn/Pb) finish
•
•
•
•
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 1N6073 thru 1N6075: 340 mg
1N6076 thru 1N6078: 750 mg
1N6079 thru 1N6081: 1270 mg
See package dimensions on last page
•
Average Rectified Forward Current (IO) at TL= +70oC
(L= 0 inch from body):
1N6073 thru 1N6075: 3.0 Amps
1N6076 thru 1N6078: 6.0 Amps
1N6079 thru 1N6081: 12.0 Amps
Average Rectified Forward Current (IO) at TA=55oC:
1N6073 thru 1N6075: 0.85 Amps
1N6076 thru 1N6078: 1.3 Amps
1N6079 thru 1N6081: 2.0 Amps
•
•
•
Thermal Resistance L= 0 inch (RθJL): 13oC/W for
1N6073-6075, 8.5oC/W for 1N6076-6078, and
5.0oC/W for 1N6079-6081
Solder temperature: 260oC for 10 s (maximum)
Copyright 2004
Microsemi
Page 1
12-08-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6073 thru 1N6081
VOIDLESS HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS @ 25oC unless otherwise specified
WORKING
MAXIMUM
FORWARD
VOLTAGE
(PULSED)
MAXIMUM
REVERSE
RECOVERY
TIME*
AVERAGE
AVERAGE
PULSED
TEST
MAXIMUM
REVERSE
CURRENT
MAXIMUM
SURGE
PEAK
RECTIFIED
RECTIFIED
REVERSE
VOLTAGE
TYPE
CURRENT
CURRENT
CURRENT I
CURRENT I
O
O
I
@ V
I
@ T = 70ºC @ T = 55ºC
R
RWM
FSM
L
A
V
t
V
I
RWM
rr
F
@
F
VOLTS
VOLTS
2.04
2.04
2.04
1.76
1.76
1.76
1.50
1.50
AMPS
9.4
AMPS
AMPS
0.85
0.85
0.85
1.3
ns
30
30
30
30
30
30
30
30
30
AMPS
35
µA
1.0
1.0
1.0
5.0
5.0
5.0
1N6073
1N6074
1N6075
1N6076
1N6077
1N6078
1N6079
1N6080
1N6081
50
3.0
100
150
50
9.4
3.0
35
9.4
3.0
35
18.8
18.8
18.8
37.7
37.7
6.0
75
100
150
50
6.0
1.3
75
6.0
1.3
75
12.0
12.0
12.0
2.0
10.0
10.0
10.0
175
175
175
100
150
2.0
*NOTE: IF = 0.5 A, IRM = 1.0 A, an1d.5I0R(REC) = 0.3275.7A
2.0
SYMBOLS & DEFINITIONS
Symbol
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VBR
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
VRWM
VF
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
IR
temperature.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
t
rr
GRAPHS
FIGURE 1
FIGURE 2
FIGURE 3
Maximum power in watts vs lead temperature
For 1N6079, 1N6080 and 1N6081
Maximum power in watts vs lead temperature
for 1N6076, 1N6077 and 1N6078
Maximum power in watts vs lead temperature
for 1N6073, 1N6074 and 1N6075
Maximum lead temperature in oC (TL) at point “L” from body (for maximum operating junction temperature with equal two-lead conditions).
Copyright 2004
Microsemi
Page 2
12-08-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6073 thru 1N6081
VOIDLESS HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
Lead Length
Lead Length
Lead Length
R
R
R
θJL
θJL
θJL
INCHES (mm)
OC/W
5.0
INCHES (mm)
OC/W
8.5
INCHES (mm)
OC/W
13
0.000
0.000
0.000
0.125 (3.17)
0.250 (6.35)
0.375 (9.53)
0.500 (12.70)
0.750 (19.05)
11.5
17.5
23.5
29.0
40.0
0.125 (3.17)
0.250 (6.35)
0.375 (9.53)
0.500 (12.70)
0.750 (19.05)
14.0
19.5
25.0
30.0
40.0
0.125 (3.17)
0.250 (6.35)
0.375 (9.53)
0.500 (12.70)
0.750 (19.05)
24
35
46
54
70
1N6079, 1N6080 and 1N6081
NOTES:
1N6076, 1N6077 and 1N6078
1N6073, 1N6074 and 1N6075
1. Dimensions are in inches
2. Metric equivalents (to the nearest .01mm) are given for general information only and are based upon 1 inch = 25.4 mm.
PACKAGE DIMENSIONS
PACKAGE A (1N6073-75)
NOTE: Lead diameter tolerance = +0.003/-0.004 inches
PACKAGE E (1N6076-78)
NOTE: Lead diameter tolerance = +0.002/-0.003 inches
PACKAGE G (1N6079-81)
NOTE: Lead diameter tolerance = +0.002/-0.003 inches
Copyright 2004
Microsemi
Page 3
12-08-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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