JANTXV1N6101 [MICROSEMI]
MONOLITHIC AIR ISOLATED DIODE ARRAY; 单片隔绝空气二极管阵列
| 型号： | JANTXV1N6101 |
| 厂家： | 
Microsemi |
| 描述： | MONOLITHIC AIR ISOLATED DIODE ARRAY |
| 文件： | 总1页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6101
A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
Phone: 617-924-9280
Fax: 617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
DIODE ARRAY
16
15
1
2
3
4
FEATURES:
14
13
· HERMETIC CERAMIC PACKAGE
· Bv > 75V at 5uA
· Ir < 100nA at 40V
· C < 4.0 pF
12
11
5
6
7
10
9
8
Absolute Maximum Ratings:
Symbol
Parameter
Limit
Unit
.320
.290
.310
.220
.200
MAX
.005
MIN
VBR(R) *1 *2 Reverse Breakdown Voltage
75
Vdc
.200
.100
IO
*1 * 3 Continuous Forward Current
*1 Peak Surge Current (tp= 1/120 s)
*4 Power Dissipation per Junction @ 25°C
300
500
400
600
mAdc
mAdc
mW
.023
.014
IFSM
PT1
PT2
Top
Tstg
.070
.030
.785
MAX
*4
Power Dissipation per Package @ 25°C
Operating Junction Temperature Range
Storage Temperature Range
mW
-65 to +150 °C
-65 to +200 °C
.098
MAX
.100
BSC
.060
.015
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 °C
NOTE 4: Derate at 4.0mW/°C above +25 °C
.015
.008
O-15
Electrical Characteristics (Per Diode) @
25°C unless otherwise specified
PACKAGE OUTLINE
Symbol Parameter
Conditions
Min
Max Unit
Vf1
IR1
IR2
Ct
tfr
trr
Forward Voltage
Reverse Current
Reverse Current
Capacitance (pin to pin)
Forward Recovery Time
If = 100mAdc *1
VR = 40 Vdc
VR = 20 Vdc
VR = 0Vdc; f = 1 MHz
If = 100mAdc
1
Vdc
0.1 uAdc
25 nAdc
4.0 pF
15
10
5
ns
ns
mV
Reverse Recovery Time If = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms
Forward Voltage Match If = 10 mA
VF5
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1016.PDF Rev - 11/25/98
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